• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.142-150
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• 2012

In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.46-46
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• 2009

과거 고강도강 용접부에서 발생하는 저온균열은 주로 용접열영향부에서 발생하였는데, 이러한 문제점을 해결하기 위하여 강재 메이커들은 고강도강의 용접성을 향상시키고자 노력하였다. 이러한 노력의 결과로 TMCP, HSLA 강 등이 개발되었고 이들 강재는 예열온도를 저하시킬 수 있다는 장점 때문에 보편화되어 사용되었다. 이러한 강재는 모재 예열온도를 기준으로 적용하게 되면 용착금속에서 저온균열이 발생하는 경우가 있다. 따라서 이제는 용접재료의 용접성, 즉 용접재료의 저온균열 저항성을 평가 할 수 있는 기법이 요구된다. 본 연구의 목적은 용착금속의 저온균열 저항성을 평가하는 것인데, 저온균열 저항성은 용착금속의 미세조직에 따라 다르게 나타날 수 있다. 용착금속의 합금조성은 기본적으로 용착금속에 요구되는 최저 강도와 충격인성을 만족할 수 있도록 설계한다. 하지만 유사한 강도의 유사한 합금조성이더라도 일부 합금 성분에 의해 용착금속의 미세조직들은 상이하게 나타날 수 있는데, 미세조직 특성에 의하여 용착금속의 강도와 저온인성이 결정된다. 용착금속의 저온균열 저항성을 평가하기위하여 Gapped Bead-on-Groove(G-BOG) 시험에 사용된 모재는 50mm 두께의 mild steel을 사용하였으며, 모재의 희석을 방지하기위해 15mm 깊이로 V-groove 가공 후 buttering 용접 하였다. 용접된 시편은 다시 5mm 깊이로 V-groove로 2차 가공 후 Ar + 20% $Co_2$ gas를 사용하여 용접하였다. 용접재료는 ER-100S-G grade로 비슷한 합금조성을 갖는 2 종류를 사용하였다. A용접재료는 Ti 이 0.1% 함유 되었으며, B용접재료는 Ti 함유되지 않은 것을 사용하였다. 또한 예열 온도에 따라 저온균열 감수성을 평가하기위하여 모재의 예열온도를 각각 상온, $50^{\circ}C,\;75^{\circ}C,\;100^{\circ}C$로 하여 실험을 진행하였다. 용착금속의 미세조직을 확인해본 결과 Ti 함유된 A 용착금속 미세조직은 대부분 침상형페라이트로 나타났으며, Ti 함유되지 않은 B 용착금속 미세조직은 대부분 베이나이트로 나타났다. G-BOG 시험 결과 Ti 함유된 A 시편이 Ti 함유되지 않은 B 시편보다 저온균열 발생량이 적었다. 이는 용착금속의 미세조직분포 및 특성에 따라 저온균열감수성이 다르다는 것을 나타낸다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.134-135
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• 2003

The dental implant materials required good mechanical properties, such as fatigue strength, combined with a high resistance to corrosion. For increasing fatigue resistance and delaying onset of stress corrosion cracking, shot peening has been used for > 50 years to extend service life of metal components. However, there is no information on the electrochemical behavior of shot peened and hydroxyapatite(HA) coated Ti-6Al-4V alloys. To increase fatigue strength, good corrosion resistance, and biocompatibility, the electrochemical characteristics of Ti/TiN/HA coated and shot peened Ti-6Al-4V alloys by electron beam physical vapor deposition(EB-PVD) have been researched by various electrochemical method in 0.9%NaCl. Ti-6Al-4V alloys were prepared under the condition of hydrogen and vacuum arc furnace. The produced materials were quenched at 1000$^{\circ}C$ under high purity dried Ar atmosphere and were hold at 500$^{\circ}C$ for 2 hrs to achieve the fatigue strength(1140㎫) of materials. Ti-6Al-4V alloys were prepared under the condition of hydrogen and vacuum arc furnace. Shot peening(SP) and sand blasting treatment was carried out for 1, 5, and 10min. On the surface of Ti-6Al-4V alloys using the steel balls of 0.5mm and alumina sand of 40$\mu\textrm{m}$ size. Ti/TiN/HA multilayer coatings were carried out by using electron-beam deposition method(EB-PVD) as shown Fig. 1. Bulk Ti, powder TiN and hydroxyapatite were used as the source of the deposition materials. Electrons were accelerated by high voltage of 4.2kV with 80 - 120mA on the deposition materials at 350$^{\circ}C$ in 2.0 X 10-6 torr vacuum. Ti/TiN/HA multilayer coated surfaces and layers were investigated by SEM and XRD. A saturated calomel electrode as a reference electrode, and high density carbon electrode as a counter electrode, were set according to ASTM GS-87. The potentials were controlled at a scan rate of 100 mV/min. by a potentiostat (EG&G Co.273A) connected to a computer system. Electrochemical tests were used to investigate the electrochemical characteristics of Ti/TiN/HA coated and shot peened materials in 0.9% NaCl solution at 36.5$^{\circ}C$. After each electrochemical measurement, the corrosion surface of each sample was investigated by SEM.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.831-836
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• 1998

The B1914 Ni-base superalloy was manufactured according to crystal structures of poly-, directionally solidified- and single crystals. We observe deformation as type of different crystal structure from room to high temperature. Specimens are controled by cooling rate and thermal gradient and then heat treatment in vacuum and then cooling with Ar gas. Different crystal structure has different stress-strain characteristic. At $600^{\circ}C$, yield strength and ultimate strength is increased single-, directionally solidified- and poly crystals in order.

• Journal of the Society of Disaster Information
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• v.15 no.4
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• pp.597-606
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• 2019

Purpose: This paper is for the improvement of the safety education system in the construction industry, which has become a great threat to domestic industrial safety. Among the industrial sectors, the accident rate and death rate in the construction industry are the highest, and measures for falls in the litigation work are needed. Method: The application of the Analytic Hierarchy Process(AHP) resulted in the following conclusions. Results: The management group of the construction industry was divided into a group of on-site workers. In addition, the practical education system was reviewed by analyzing differences in perceptions of safety education. The survey results of the two groups were analyzed through AHP by dividing the construction safety education system into three layers. Conclusion: The results showed that managers showed a great deal of importance, such as actual conditions for implementation related to education, while on-site workers indicated importance for items that were somewhat site-oriented compared to managers. In addition, the two groups did not place much weight on the effectiveness of AR and VR, which have been expanding into safety education recently.

• Journal of Physiology & Pathology in Korean Medicine
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• v.17 no.2
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• pp.529-541
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• 2003

Yukmijihwang-tang has been widely used as an and-aging herbal medicine for hundred years in Asian countries. Numerous studies show that Yukmijihwangtang has anti-oxidative effect both in vivo and in vitro. It has been reported that Moutan Cortex Radicis extract (MCR) was the most effective herb in Yukmijihwang-tang on undifferentiated PC12 cells upon oxidative-stressed with hydrogen peroxide. The purpose of this study is to; 1) evaluate the recovery of neuronal damage by assessing the anti-oxidant effect of MCR on PC12 cells differentiated with nerve growth factor (NGF), 2) identify candidate genes responsible for anti-oxidative effect on differentiated PC12 cells by oligonucleotide chip microarray. PC12 cells, which were differentiated by treating with NGF, were treated without or with hydrogen peroxide in the presence or absence of various concentration of MCR. Cell survival was determined by using MTS assay. Measurement of intracellular reactive oxygen species (ROS) generation was determined using the H2DCFDA assay The viability of cells treated with MCR was significantly recovered from stressed PC12 cell. In addition, wide rage of concentrations of MCR shows dose-dependent inhibitory effect on ROS production in oxidative-stressed cells. Total RNAs of cells without treatment(Control group), only treated with H₂O₂ (stressed group) and treated with both H₂O₂ and of MCR (MCR group) were isolated, and cDNAs was synthesized using oligoT7(dT) primer. The fragmented cRNAs, synthesized from cDNAs, were applied to Affymetrix GeneChip Rat Neurobiology U34 Array. mRNA of Calcium/calmodulin-dependent protein kinase II delta subunit(CaMKII), neuron glucose transporter (GLUT3) and myelin/oligodendrocyte glycoprotein(MOG) were downregulated in Stressed group comparing to Control group. P2X2-5 receptor (P2X2R-5), P2X2-4 receptor (P2X2R-4), c-fos, 25 kDa synaptosomal attachment protein(SNAP-25a) and GLUT3 were downregulated, whereas A2 adenosine receptor (A2AR), cathechol-O-methyltransferase(COMT), glucose transporter 1 (GLUT1), EST223333, heme oxygenase (HO), VGF, UI-R-CO-ja-a-07-0-Ul.s1 and macrophage migration inhibitory factor (MIF) were upregulated in MCA group comparing to Control group. Expression of Putative potassium channel subunit protein (ACK4), P2X2A-5, P2X2A-4, Interferon-gamma inducing factor isoform alpha precursor (IL-18α), EST199031, P2XR, P2X2 purinoceptor isoform e (P2X2R-e), Precursor interleukin 18 (IL-18) were downregulated, whereas MOO, EST223333, GLUT-1, MIF, Neuronatin alpha, UI-R-C0-ja-a-07-0-Ul.s1, A2. adenosine receptor, COMT, neuron-specific enolase (NSE), HO, VGF, A rat novel protein which is expressed with nerve injury (E12625) were upregulated in MCR group comparing to Stressed group. The results suggest that decreased viability and AOS production of PC12 cell by H₂O₂ may be, at lease, mediated by impaired glucose transporter expression. It is implicated that the MCR treatment protect PC12 cell from oxidative stress via following mechanisms; improving glucose transport into the cell, enhancing expression of anti-oxidative genes and protecting from dopamine cytotoxicity by increment of COMT and MIF expression. The list of differentially expressed genes may implicate further insight on the action and mechanism behind the anti-oxidative effects of herbal extract Moutan Cortex Radicis.

• Journal of Technologic Dentistry
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• v.21 no.1
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• pp.27-41
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• 1999

The Ag-Pd-Cu alloys containing a small amount of Au is commonly used for dental purposes, because this alloy cheaper than Au-base alloys for clinical use. However, the most important characteristic of this alloy is age-hardenability, which is not exhibited by other Ag-base dental alloys. The specimens used were Ag-30Pd-10Cu ternary alloy and Au addition alloy. These alloys were melted and casted by induction electric furnace and centrifugal casting machine in Ar atmosphere. These specimens were solution treated for 2hr at $800^{\circ}C$ and were then quenched into iced water, and aged at 350-$550^{\circ}C$ Age-hardening characteristic of the small Au-containing Ag-Pd-Cu dental alloys were investigated by means of hardness testing, X-ray diffraction and electron microscope observations, electrical resistance, differential scanning calorimetric, energy dispersed spectra and electron probe microanalysis. Principal results are as follows ; Maximum hardening occured in two co-phases of ${\alpha}_2$ + PdCu In stage II, decomposition of the $\alpha$ solid solution to a PdCu ordered phase($L1_o$ type) and an Ag-rich ${\alpha}_2$ phase occurred and a discontinuous precipitation occurred at the grain boundary. From the electron microscope study, it was concluded that the cause of age-hardening in this alloy is the precipitation of the PdCu redered phase, which has AuCu I type face-centered tetragonal structure. Precipitation procedure was ${\alpha}{\to}{\alpha}_1+PdCu{\to}{\alpha}_2+PdCu$ at Pd/Cu = 3 Pd element of Ag-Pd-Cu alloy is more effective dental alloy on anti-corrosion and is suitable to isothermal ageing at $450^{\circ}C$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.65-65
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• 2018

갈바륨 도금강판은 알루미늄의 우수한 차폐 특성과 내열성, 열 반사성을 가지며 아연의 희생방식 특성을 겸비하여 동일 부착량의 용융 아연도금 및 알루미늄 도금강판에 비해 우수한 내식성을 나타낸다고 알려져 있다. 또한 이것은 표면이 미려하고 경제성이 높아 건자재 용도로 현재까지도 세계적으로 널리 이용되고 있다. 여기서 지칭하는 바륨 도금강판(galvalume steel)은 아연과 알루미늄 도금강판의 장점을 접목하기 위해 55 Al-43.4 Zn-1.6 Si (wt.%)로 구성되어 개발된 3원계 성분의 합금도금강판이다. 한편, 최근에는 강재의 내식성을 향상시키기 위한 다양한 연구 결과에 의해 Zn-Al-Mg의 3원계 합금도금강판도 개발되어 사용되고 있다. 이것은 기존의 아연도금 강판 보다 10배 정도의 우수한 내식성을 나타내는 것으로 보고되고 있다. 특히, 이것은 도금된 평판부의 내식성은 물론 절단된 도금 단면부의 내식성도 매우 우수하다고 알려져 있다. 그러나 상기한 갈바륨 도금강판의 경우에는 도금된 표면부에 비해 단면부의 내식성이 상대적으로 취약한 것으로 알려져 있다. 따라서 본 연구에서는 갈바륨 도금강판의 내식성을 종합적으로 향상시키기 위하여 이 갈바륨 도금강판 상에 PVD 스퍼터링법에 의해 Mg 코팅막의 제작을 시도하였다. 여기서 Mg 코팅막은 후처리 된 갈바륨 도금강판 상에 Ar 공정압력 2 및 20 mTorr 조건 중 1.5 및 $3{\mu}m$ 두께로 제작하였다. 또한 제작한 코팅막에 대해서는 모폴로지 관찰(SEM) 및 결정구조 분석(XRD)을 하였고, 분극측정, 염수분무 시험(SST) 및 복합부식 시험(CCT)에 의해 표면 및 단면부의 내식성평가를 수행하였다. 또한 여기서는 염수분무 및 복합부식 시험 후의 시험편도 채취 하여 표면 및 단면부위에 대한 원소조성 분석(EPMA)과 결정구조 분석(XRD)을 실시하였다. 이상의 실험 결과에 의하면, 본 실험에서 제작한 Mg 코팅막은 그 두께가 두꺼울수록 표면 Mg 결정립의 크기가 증가하였고, 그 부식속도가 증가하는 경향을 나타내었다. 또한 여기서는 공정압력이 높은 조건에서 제작한 막일수록 Mg(002)면 피크 강도가 감소하고 Mg(101)면 피크의 배향성이 증가하였다. 그때 그 막의 내식성은 향상되는 경향을 나타내었다. 그리고 종합적으로 염수분무 및 복합부식 시험 결과에 의하면 Mg이 코팅된 갈바륨 도금강판은 기존 갈바륨 도금강판 보다 내식성이 현저히 향상되었다. 특히, 단면부 내식성의 경우에는 기존 대비 5배 이상 향상되는 경향을 나타내었다. 여기서 단면부 내식특성 분석을 위한 EPMA 원소조성 분석 결과에 의거하면, 부식 초기에는 마그네슘의 부식생성물에 의해 단면부가 치밀하게 보호되고 있음을 확인할 수 있었다. 그 이후에는 부식이 지속적으로 진행됨에 따라 갈바륨 도금층에서 용출된 알루미늄 및 아연 성분이 마그네슘과 함께 치밀한 부식생성물을 형성하여 단면부를 차폐함에 따라 단면부의 내식성이 크게 향상된 것으로 생각된다. 이러한 부식생성물의 결정구조 분석 결과에 따르면, 염수분무와 복합부식 시험에서는 공통적으로 MgO, $Mg(OH)_2$ 이외에도 Simonkolleite상 등이 형성되었다. 또한 건-습 반복 부식시험인 복합부식시험 후에는 $Mg_5(CO_3)_4(OH)_24H_2O$(Hydromagnesite)상 등이 형성됨을 확인할 수 있었다. 즉, 본 실험에서 후처리된 갈바륨 도금강판 상에 제작한 마그네슘 코팅막의 경우에는 상기와 같은 다양한 부식반응에 의해 표면 및 단면부에 형성된 Mg계 부식생성물과 $Zn_5(OH)_8Cl_2H_2O$(Simonkolleite)상에 의해서 표면은 물론 단면부 내식성이 크게 향상된 것으로 사료된다.