• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.245-248
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• 2012

In this paper, the optimized growing conditions of PZT thin films on low temperature co-fired ceramics (LTCC) substrates are studied. The LTCC technology is an emerging one in the fields of mesoscale (from 10 um to several hundred um) sensor and actuator against silicon based technology due to low cost, high yield, easy manufacturing of 3 dimensional structure, etc. The LTCC substrates with thickness of 400 um are fabricated by laminating 100 um green sheets using commercial power (NEG, MLS 22C). The Pt/Ti bottom electrodes are deposited on the LTCC substrates, then the growing conditions of PZT thin films using rf magnetron sputtering method are studied. The growing conditions are tested under various rf power and gas ratio of oxygen to argon. And the crystallization and ingredient of PZT films are analyzed by X-ray diffraction method (XRD) and energy dispersive spectroscopy (EDS). The optimized growing conditions of PZT thin films are rf power of 125W, Ar/O2 gas ratio of 15:5.

• Korean Journal of Agricultural Science
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• v.48 no.2
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• pp.241-250
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• 2021

This investigation assessed the berry quality after two months of low-temperature storage (3 ± 1℃) of 'Shine Muscat' grapes, which were treated with CPPU (N-[2-chloro-4-pyridyl]-N'-phenylurea) or TDZ (1-phenyl-3-[1,2,3-thiadiazol-5-yl] urea) in combination with gibbrellic acid (GA₃). The berry shatter rate was the lowest (1%) in 4 cm + CPPU treatment, while it was the highest (2.4%) in 3 cm floral length treated with CPPU. On the other hand, the 4 cm + TDZ treatment resulted in a shatter rate of 2.0%, which was twice as high as that observed after 4 cm + CPPU treatment. The 4 cm + TDZ treatment resulted in a 5.5% berry decay rate, which was the highest among all treatments. Alternatives to using a sulfur dioxide (SD) pad to maintain the quality of 'Shine Muscat' grapes, namely, using ethylene scrubbers (ESs, 3 g × 2 sachet) and alcohol releasers (ARs, 2 g × 2 sachet) in a 2 kg carton package for export, were explored in this study. The berry shatter rate with ES treatment (1.0%) was found to be comparable to that with SD treatment (0.6%) during three months of cold storage. Regarding the berry decay rate, that of the untreated control surged to 36.0% in the three months of storage, followed by 19.9% and 15.5% in samples subjected to AR and ES treatments respectively. Compared with the untreated control, the samples subjected to SD treatment showed a decay rate of 2.2%, which was the most effective in reducing berry decay by 95%. These results demonstrated that SD pad treatment of 'Shine Muscat' grapes was the most effective method of maintaining berry quality, and ES treatment partially reduced the berry shatter and berry decay rates.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.34 no.12
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• pp.1087-1092
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• 2010

A micro 3D-PTV system has been constructed using a single camera system. Two viewing holes were created behind the object lens of the microscopic system to construct a stereoscopic viewing image. A hybrid recursive PTV algorithm was used. A concept of epipolar line was adopted to eliminate many spurious candidates. Three-dimensional velocity vector fields were obtained by calculating the three-dimensional displacements of particles that were identified as being identical. The system consists of a laser light source (Ar-ion, 500 mW), one high-definition camera ($1028{\times}1024$ pixels, 500 fps), a circular plate with two viewing holes, and a host computer. The performance of the developed algorithm was tested using artificial images. The characteristic of the vector recovery ratio was investigated for the particle numbers. A micro backward-facing step channel ($H{\times}h{\times}W:\;36{\mu}m{\times}70{\mu}m{\times}3000{\mu}m$) was measured using the developed measurement system. The results were in good qualitative agreement with other results.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.737-743
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• 1998

The synthesis of $SrAI_2O_4:Eu^{2+}$ phosphor and its properties of both photoluminescence and long-phosphorescent were investigated as a function of sintering condition. Single phase of $SrAl_2O_4$ was obtained by sintering the mixtures of $SrCO_3$, $Eu_2O_3$, $AI_2O_34 and 3wt% $B_2O_3$ powders over 100$0^{\circ}C$ in Ar/H2 atmosphere. The optimum sintering condition for the long-phosphorescent phosphor of $SrAI_2O_4:Eu^{2+}$ was found at 130$0^{\circ}C$ for 3hours. The PL emission spectrum of $SrAI_2O_4:Eu^{2+}$ shows a maximum peak intensity at 520nm(2.384eV) with a broad emission extending from 450 to 650nm which resulted from the $4f^65d^1$$\rightarrow$$4f^7$ transition of $Eu^{+2}$ under 360nm exitation. Monitored at 520nm. the excita¬tion spectrum of $SrAI_2O_4:Eu^{2+}$ exhibits a maximum peak intensity at 360nm (3.44eV) with a broad absorption band extending from 250 to 480nm.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.152-152
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• 1999

1Gb급 이상 기억소자의 캐패시터 재료로 주목받고 있는 (Ba,Sr)TiO3 [BST] 박막의 전극재료로는 Pt, Ru, Ir과 같은 금속전극과 RuO2, IrO2와 산화물 전도체가 유망한 것으로 알려져 있다. 그런데, DRAM의 집적도가 증가하게 되면, BST같은 고유전율 박막을 유전재료로 사용한다 하더라도, 3차원적인 구조가 불가피하게 때문에 기존의 sputtering 방법으로는 우수한 단차피복성을 얻기 힘들므로, MOCVD법이 필수적이다. 본 연구에서는 기존에 연구되었던 Pt에 비해 식각특성이 우수하고, 비교적 낮은 비저항을 갖는 Ru 박막증착에 대한 연구를 행하였다. 본 연구에서는 수직형의 반응기와 저항 가열 방식의 susceptor로 구성된 저압 유기금속 화학증착기를 사용하여 최대 6inch 직경을 갖는 기판 위에 Ru박막을 증착하였다. Precursor로는 기존에 연구된 적이 없는 bis-(ethyo-$\pi$-cyclopentadienyl)Ru (Ru(C5H4C2H5)2, [Ru(EtCp)2])를 사용하였으며, bubbler의 온도는 85$^{\circ}C$로 하였다. Si, SiO2/Si를 사용하였으며, 증착온도 25$0^{\circ}C$~40$0^{\circ}C$, 증착압력 3Torr의 조건에서 Ru 박막을 증착하였다. Presursor를 운반하는 수송기체로는 Ar을 사용하였으며, carbon과 같은 불순물의 제거를 위해 O2를 첨가하였다. 증착된 박막은 XRD, SEM, 4-point probe등을 통해 구조적, 전기적 특성을 평가하였으며, 열역학 계산을 위해서는 SOLGASMIX-PV프로그램을 사용하였다. Ru 박막의 증착에 있어서 산소의 첨가는 필수적이었으며, Ru 박막의 증착속도는 30$0^{\circ}C$~40$0^{\circ}C$의 온도 영역에서 200$\AA$/min으로 일정하였으며, 첨가된 산소의 양이 적을수록 더 치밀하고 평탄한 표면형상을 보였으며, 또한 더 낮은 전기 전도도를 보였다. 그리고 증착된 박막은 12~15$\mu$$\Omega$cm 정도의 낮은 비저항 값을 나타냈으며 이것은 기존의 sputtering 법에 의해 증착된 Ru 박막의 비저항 값들과 비교될만하다. 한편, 높은 온도, 높은 산소분압 조건에서 RuO2의 형성을 관찰하였으며, 이것은 열역학적인 계산을 통해서 잘 설명할 수 있었다.

• Progress in Superconductivity
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• v.8 no.1
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• pp.59-64
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• 2006

High $J_c\;YBa_2Cu_3O_x$ superconducting films were fabricated by MOD method using fluorine-free dichloroacetic acid(DCA) as chelating solvent for preparing precursor solution. Coating solutions were prepared by dissolving Y-, Ba- and Cu-acetates in DCA solvent followed by drying in rota vapor to obtain the blue gel that is diluted in methanol and 2-methoxyethanol for adjusting the cation concentration. DCA-MOD precursor solution was coated on a single crystal(001) $LaAlO_3(LAO)$ substrate by a dip coating method with a speed of 25 mm/min. Coated films were calcined at lower temperature up to $500^{\circ}C$ in flowing oxygen atmosphere with a 7.2% humidity. Conversion heat treatment was performed at various temperatures of $780{\sim}810^{\circ}C$ for 2 h in flowing Ar gas containing 1000 ppm oxygen with a humidity of 9.45%. SEM observations showed that films have very dense microstructures for the films prepared at the temperature higher than $800^{\circ}C$ regardless of diluting solvent; methanol or 2-methoxyethanol. X-ray diffraction analysis showed that YBCO grains grew with a (001) preferred orientation. A High critical current density($J_c$) of 1.28 $MA/cm^2$(@77 K and self-field) was obtained id. the YBCO film prepared using 2-methoxyethanol as a solvent.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.132-132
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• 2018

NiTi 형상 기억 합금은 형상기억 효과 (Shape memory effect) 또는 초탄성 효과 (superelasticity effect)를 나타낸다고 알려져 있다. 대표적으로 Ni:Ti 조성비가 1:1을 갖는 NiTi(니티놀) 합금은 형상기억 및 초탄성 효과가 우수하여 기계 가공 공정뿐만 아니라 우수한 내마모성을 요구하는 공구에 사용하기 적합하다. 하지만 NiTi 박막은 합금과 같은 Damping capacity를 가지고 있지만 비교적 낮은 물리적 특성을 가지고 있다. 본 연구에서는 NiTi 박막의 낮은 물리적 특성을 향상시키기 위하여 TiN과 NiTi의 2층형 박막을 제조하고 각 층의 두께 변화를 조절하여 특성 향상에 대한 기초연구를 진행했다. 타겟은 NiTi (Ni:Ti=48.2:51.8 at.%) 합금 타겟과 Ti 타겟을 사용하였고, 시편과 타겟 간의 거리는 약 10cm 이며, 시편은 기초분석을 위한 SUS304, 물리적 특성 평가를 위한 초경 을 사용하였다. 초경은 실제 공구에서 사용하고 있는 Co함량이 10% 함유된 시편은 선정했다. 시편 전처리는 알코올과 아세톤으로 세척을 실시한 후 진공챔버에 장착하고 ${\sim}10^{-5}Torr$ 까지 진공배기를 실시하였다. 기판 정청은 글로우 방전 방식으로 약 800 V 전압에서 30분간 실시했다. 공정 가스는 Ar와 $N_2$ 혼합가스를 사용하였으며, UBM(Un-Balanced Magnetron) 스퍼터링 소스를 이용하여 2층형 박막을 제조했다. TiN과 NiTi 층의 두께 비율을 0.5, 1 그리고 2 로 변화시켜 코팅했으며, 박막의 총 두께는 약 ${\sim}3{\mu}m$ 이다. 기초분석은 FE-SEM을 통해 두께와 박막 비율을 확인 및 XRD 분석을 통해 박막 정성분성을 실시했다. 2층형 박막의 물리적 특성은 Nanoindentation test, AFM 및 ball on disc를 이용하여 평가했으며, 그 결과 두께 비율 변화에 따라 물리적 특성 변화가 나타남을 확인했다.

• Journal of the Korean Electrochemical Society
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• v.7 no.2
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• pp.94-99
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• 2004

Anode-supported flat tubular solid oxide fuel cell (SOFC) was investigated to increase the cell power density. The anode-supported flat tube was fabricated by extrusion process. The porosity and pore size of Ni/YSZ ($8mol\%$ yttria-stabilized zirconia) cermet anode were $50.6\%\;and\;0.23{\mu}m$, respectively. The Ni particles in the anode were distributed uniformly and connected well to each other particles in the cermet anode. YSZ electrolyte layer and multilayered cathode composed of $LSM(La_{0.85}Sr_{0.15})_{0.9}MnO_3)/YSZ$ composite, LSM, and $LSCF(La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.7}O_3)$ were coated onto the anode substrate by slurry dip coating, subsequently. The anode-supported flat tubular cell showed a performance of $300mW/cm^2 (0.6V,\; 500 mA/cm^2)\;at\;500^{\circ}C$. The electrochemical characteristics of the flat tubular cell were examined by ac impedance method and the humidified fuel enhanced the cell performance. Areal specific resistance of the LSM-coated SUS430 by slurry dipping process as metallic interconnect was $148m{\Omega}cm^2\;at\;750^{\circ}C$ and then decreased to $148m{\Omega}cm^2$ after 450hr. On the other hand, the LSM-coated Fecralloy by slurry dipping process showed a high area specific resistance.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.330-332
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• 2013

소 분위기에서 플라즈마 표면 처리의 경우 기판 표면에 존재하는 수소와 탄소 유기물들이 산소와 반응하여 $H_2O$와 $CO_2$ 등으로 제거되며 표면에 오존 결합을 유도하여 표면 에너지를 증가시키는 것으로 알려져 있다. ZnO 나노구조물을 성장시키는 방법으로는 MOCVD (Metal-Organic Chemical Vapor Deposited), PLD (Pulsed Laser Deposition), VLS (Vapor-Liquid-Solid), Sputtering, 습식화학합성법(Wet Chemical Method) 방법 등이 있다. 그중에서도 습식화학합성법은 쉽게 구성요소를 제어할 수 있고, 저비용 공정과 낮은 온도에서 성장 가능하며 플렉서블 소자에도 적용이 가능하다. 그러므로 본 연구에서는 플라즈마 표면처리에 따라 표면에너지를 변화하여 습식화학합성법으로 성장시킨 ZnO nanorods의 밀도를 제어하고 photolithography 공정 없이 패터닝 가능성을 유 무를 판단하는 연구를 진행하였다. 기판은 Si wafer (100)를 사용하였으며 세척 후 표면에너지 증가를 위한 플라즈마 표면처리를 실시하였다. 분위기 가스는 Ar/$O_2$를 사용하였으며 입력전압 400 W에서 0, 5, 10, 15, 60초 동안 각각 실시하였다. ZnO nanorods의 seed layer를 도포하기 위하여 Zinc acetate dehydrate [Zn $(CH_3COO)_2{\cdot}2H_2O$, 0.03 M]를 ethanol 50 ml에 용해시킨 후 스핀코팅기를 이용하여 850 RPM, 15초로 5회 실시하였으며 $80^{\circ}C$에서 5분간 건조하였다. ZnO rods의 성장은 Zinc nitrate hexahydrate [$Zn(NO_3)_2{\cdot}6H_2O$, 0.025M], HMT [$C6H_{12}N_4$, 0.025M]를 deionized water 250 ml에 용해시켜 hotplate에 올리고 $300^{\circ}C$에서 녹인 후 $200^{\circ}C$에서 3시간 성장시켰다. ZnO nanorods의 성장 공정은(Fig. 1)과 같다. 먼저 플라즈마 처리한 시편의 표면에너지 측정을 위해 접촉각 측정 장치[KRUSS, DSA100]를 이용하였다. 그 결과 0, 5, 10, 15, 60 초로 플라즈마 표면 처리했던 시편이 각각 Fig. l, 2와 같이 $79^{\circ}$, $43^{\circ}$, $11^{\circ}$, $6^{\circ}$, $7.8^{\circ}$로 측정되었으며 이것을 각각 습식화학합성법으로 ZnO nanorods를 성장 시켰을 때 Fig. 3과 같이 밀도 차이를 확인할 수 있었다. 이러한 결과를 바탕으로 기판의 표면에너지를 제어하여 Fig. 4와 같이 나타나며 photolithography 공정없이 ZnO nanorods를 패터닝을 할 수 있었다. 본 연구에서는 플라즈마 표면 처리를 통하여 표면에너지의 변화를 제어함으로써 ZnO nanorods 성장의 밀도 차이를 나타냈었다. 이러한 저비용, 저온 공정으로 $O_2$, CO, $H_2$, $H_2O$와 같은 다양한 화학종에 반응하는 ZnO를 이용한 플렉시블 화학센서에 응용 및 사용될 수 있고, 플렉시블 디스플레이 및 3D 디스플레이 소자에 활용 가능하다.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.