• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.249-255
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• 1999

Deposition characteristics of Cu thin films using Ar carrier gas and $H_2$ processing gas at various working pressures and substrate temperatures were investigated. Also, effects of $H_2$ pretreatment using plasma at $200^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure were stdied. Cu thin films were deposited on TiN/Si substrate at working pressure of 0.5~1.5 Torr, substrate temperatures of 140~$240^{\circ}C$ with (hface)Cu(tmvs). Substrates were pretreated by $H_2$ plasma, and Cu films deposited in situ using twofold shower head. The purity, electrical resistivity, thickness, surface morphology, optical properties of the deposited Cu films were measured b the AES, four point probe, stylus profiler, SEM,. and the uv-visible spectrophotometer. This study suggests that $H_2$ plasma is an effective method for enhancing deposition rate and for producing high quality copper thin films.

• Journal of Welding and Joining
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• v.7 no.4
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• pp.12-21
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• 1989

Laser beam welding parameters have experimentally investigated, using a continuous wave 3kW $CO_2$ laser with the various travel speeds, beam mode and laser beam power in low carbon steels. An optimum position of focus and the effect of shielding gas on penetration depth with varying the flow range of 0.5 to 5.1m/min have been combined to investigate the effect of laser power and travel speed on penetration depth and bead width. It is found that the optimum position of focus in 3kW class laser is 0.5 to 1.5mm below the surface of the material. The flow rate of shielding gas affects the penetration depth and He is more effective than Ar. The penetration depth in laser welds of low carbon steels is between two and four times of the bead width. Laser beam welding of butt joints in 2mm thick carbon steel has been carried out to establish a weldability lobe. The lobe indicating acceptable welding conditions is introduced.

• Journal of Surface Science and Engineering
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• v.34 no.4
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• pp.337-341
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• 2001

TiN coating of high speed end mill is recently generalized. The study of coating layer using ion plating is mainly about the coating method and the why of the longer life of coated tools. In CNC machning process, metal cutting isn't carry out until the tools including the end-mill and so on are fractured. Namely, it is difficult precision processing when the cutting force of the cutting tool is near the limit the fracture cutting force. So, the estimate of the life by wear and fracture is important. Therefore, this study is about the method to estimate the capacity of the coating layer in relation to the tendency of cutting force and the influence of the cutting capacity of coated end-mill by the condition N2, Ar, temperature. The cutting length is in inverse proportion to the cutting force ratio. So, the life of the TiN coated end mill can be predicated by the ratio of the increase of the cutting force.

• Journal of Surface Science and Engineering
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• v.32 no.3
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• pp.401-405
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• 1999

Reflective silver films with high quality were prepared on polyester substrate by using sputter deposit on techniques. Best reflectivity thin films of silver were produced with process parameters of $10^{-6}$ Torr as base pressure, 50 W as R.F. power, 5 mTorr as working pressure, and 10 sccm as Ar flow rate. Being deposited with an R.F. power of 50 W, Ag films revealed the highest 96.3 % reflectance as illuminated with a light of 700 nm wavelength. The adhesion of sample films showed as high as 14 to $20{\;}kg/\textrm{cm}^2$, which is suitable for industrial purposes. Their film crystallinity and orientation resulted in the planes of (111) and (200) for the growth with a preferred orientation of <111>, in general. The cross-sections of thin film specimens showed columnar structures. It is noted that columns became coarsened and less dense as R.F. power increased, resulting in a low reflectivity for the product film.

• Annual Conference of KIPS
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• 2015.10a
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• pp.544-547
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• 2015

본 논문은 깊이 카메라를 이용하여 가슴의 움직임만으로 호흡률을 예측하는 시스템을 제안한다. 카메라는 실험자의 흉부 앞에 위치하였으며, 흉부를 관심 영역으로 지정하여 깊이 값의 변화를 추출하였으며 노이즈를 제거한 후 Welch 메소드와 AR 메소드를 이용하여 호흡률을 계산하였다. 계산된 호흡률을 검증하기 위하여 공기 흐름 측정 센서를 이용하여 호흡률을 계산하고 비교하였다. 실험에서 10명의 지원자를 대상으로 0.1 Hz 부터 0.4 Hz까지 측정하여 약 98%의 정확률을 얻었다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.89-92
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• 2005

The AIN/AI thin films were prepared at various conditions, such as $N_2$ gas flow rate [$N_2(N_2+Ar)$] from 0.6 to 0.9, a substrate temperature ranging from room temperature to $300^{\circ}C$ and working pressure 1mTorr. We estimated crystallographic characteristics and c-axis preferred orientations of AIN/AI thin films as function of AI electrode surface roughness. The optimal processing conditions for AI electrode were found at substrate temperature of $300^{\circ}C$ sputtering power of 100W and a working pressure of 2mTorr. In these conditions, we obtained the c-axis preferred orientation of $AIN/AI/SiO_2/Si$ thin film about 4 degree.

• Journal of Magnetics
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• v.5 no.4
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• pp.116-119
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• 2000

Magnetic field dependence of magnetization reversal in Co/Pt multilayers was quantitatively investigated. Serial samples of Co/Pt multilayers were prepared by dc-magnetron sputtering under various Ar pressures. Magnetization reversal was monitored by magnetization viscosity measurement and direct domain observation using a magneto-optical microscope system, and the wall-motion speed V and the nucleation rate R were determined using a domain reversal model based on time-resolved domain reversal patterns. Both V and R were found to be exponentially dependent on the applied reversing field. From the exponential dependencies, the activation volumes for wall motion and nucleation could be determined, based on a thermally activated relaxation model, and the wall-motion activation volume was found to be slightly larger than the nucleation activation volume.

• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.212-216
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• 2021

We investigated the feasibility of hydrogen storage with electrochemically formed VO₂ nanotubes. The VO₂ nanotubes were fabricated through the anodization of vanadium metal in fluoride ion-containing organic electrolyte followed by an annealing process in an Ar-saturated atmosphere at 673 K for 3 h at a heating rate of 3 K /min. During anodization, the current density significantly increased up to 7.93 mA/cm² for approximately 500 s owing to heat generation, which led to a fast-electrochemical etching reaction of the outermost part of the nanotubes. By controlling the anodization temperature, highly ordered VO₂ nanotubes were grown on the metal substrate without using any binders or adhesives. Furthermore, we demonstrated the hydrogen sorption properties of the anodic VO₂ nanotubes.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.221-228
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• 1998

Enhancement of adhesion between polymer films and metal films are obtained by forming the hydrophilic functional groups on the polymer surfaces by ion assisted reaction which uses ion beam in reactive gas environments. In ion assisted reaction, ion dose, blown gas flow rate and ion energy were changed from $5\times 10^{14}$ to $1\times 10^{17}\textrm{ions/cm}^2$, from 0 to 8 sccm, and 0.3 to 1.2 kV, respectively. Wetting angle of water on polymer films modified by $ Ar^+$ ion without blowing oxygen decreases to ~$40^{\circ}$. Contact angle of water on polymer films modified by $ Ar^+$ ion with blowing oxygen decreases to ~$20^{\circ}$, and the surface free energy increases to ~70 dyne/$\textrm{cm}^2$. However, contact angle of water on polytetraflouroethylene (PTFE) modified by ion assisted reaction increases with ion dose. The adhesion strength of metal film deposited on the polymer surface was investigated. In the case of the metal film deposited on the untreated polymers, the metal films are detached from the polymer surface. While, In the case of the metal film deposited on the polymers treated by ion assisted reaction, the metal films are strongly adhere to the polymer surfaces.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.380-386
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• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.