• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.7-11
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• 2002

In this study, Au thin films were etched with a $Cl_2/Ar$ gas combination in an in an inductively coupled plasma. The etch properties were measured for different gas mixing ratios of $Cl_2/(Cl_2+Ar)$ while the other process conditions were fixed at rf power (700 W), dc bias voltage (150 V), and chamber pressure (15 mTorr). The highest etch rate of the Au thin film was 3500 $\AA/min$ and the selectivity of Au to $SiO_2$ was 4.38 at a $Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in $Cl_2/Ar$ plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions. In addition, Optical emission spectroscopy (OES) were investigated to analyze radical density of Cl and Ar in plasma. The profile of etched Au investigated with scanning electron microscopy (SEM).

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.1
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• pp.52-59
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• 2004

Recently, many researches for fine particles plasma have been focused on the fabrication of the new devices and materials in micro-electronic industry, although reduction or elimination of fine particles was interested in plasma processing until now on. In order to enhance their utilization, it is necessary to control and analyze fine particle behavior. Therefore, we developed simulation model of fine particles in RF Ar plasmas. This model consists of the calculation parts of plasma structure using a two-dimensional fluid model and of fine particle behavior. The motion of fine particles was derived from the charge amount on the fine particles and forces applied to them. In this paper, Ar plasma properties using two-dimensional fluid model without fine particles were calculated at power source voltage 15[V] and pressure 0.5[Torr]. Time-averaged spatial distributions of Ar plasma were shown. The process on the formation of Coulomb crystal of fine particles was investigated and it was explained by combination of ion drag and electrostatic forces. And also analysis on the forces of fine particles was presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.261-266
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• 1998

In developing the high density memory device, the etching of fine pattern is becoming increasingly important. Therefore, definition of ultra fine line and space pattern and minimization of damage and contamination are essential process. Also, the high density plasma in low operating pressure is necessary. The candidates of high density plasma sources are electron cyclotron resonance plasma, helicon wave plasma, helical resonator, and inductively coupled plasma. In this study, planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, flow rate, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• Macromolecular Research
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• v.17 no.11
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• pp.886-893
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• 2009

Surface modifications using a radio frequency Ar-plasma treatment were performed on a polypropylene (PP) blend used for automotive bumper fascia. The surface characterization and morphology were examined. With increasing aging time, there was an increase in wettability, oxygen containing polar functional groups (i.e., C-O, C=O and O-C=O) due to oxidation, the amount of tale, and bearing depth and roughness on the PP surface, while there was a decrease in the number of hydrocarbon groups (i.e., C-C and C-H). AFM indicated that the Ar-plasma-treatment on a PP blend surface transforms the wholly annular surface into a locally dimpled surface, leading to an improvement in wettability. SEM showed that the PP layer observed in the non-plasma-treated sample was removed after the Ar-plasma treatment and the rubber particles were exposed to the surface. The observed surface characterization and morphologies are responsible for the improved wettability and interfacial adhesion between the PP blend substrate and bumper coating layers.

• Korean Journal of Metals and Materials
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• v.46 no.3
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• pp.125-130
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• 2008

Conventional plasma carburizing or nitriding for austenitic stainless steels results in a degradation of corrosion resistance. However, a low temperature plasma surface treatment can improve surface hardness without deteriorating the corrosion resistance. The 2-step low temperature plasma processes (the combined carburizing and post nitriding) offers the increase of both surface hardness and thickness of hardened layer and corrosion resistance than the individually processed low temperature nitriding and low temperature carburizing techniques. In the present paper, attempts have been made to investigate the influence of the introduction of Ar gas (0~20%) in nitriding atmosphere during low temperature plasma nitriding at $370^{\circ}C$ after low temperature plasma carburizing at $470^{\circ}C$. All treated specimens exhibited the increase of the surface hardness with increasing Ar level in the atmosphere and the surface hardness value reached up to 1050 HV0.1, greater than 750 $HV_{0.1}$ in the carburized state. The expanded austenite phase (${\gamma}_N$) was observed on the most of the treated surfaces. The thickness of the ${\gamma}_N$ layer reached about $7{\mu}m$ for the specimen treated in the nitriding atmosphere containing 20% Ar. In case of 10% Ar containing atmosphere, the corrosion resistance was significantly enhanced than untreated austenitic stainless steels, whilst 20% Ar level in the atmosphere caused to form CrN in the N-enriched layer (${\gamma}_N$), which led to the degradation of corrosion resistance compared with untreated austenitic stainless steels.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.67-70
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• 2001

$SrBi_2Ta_2O_9$ thin films were etched at high-density $Cl_2/CF_4/Ar$ in inductively coupled plasma system. The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy and secondary ion mass spectrometry. The etching of SBT thin films in $Cl_2/CF_4/Ar$ were chemically assisted reactive ion etching. The maximum etch rate was 1060 Am /min in $Cl_2$(20)/CF_4(20)/Ar(80). The small addition of $Cl_2$ into $CF_4$(20)/Ar(80) plasma will decrease the fluorine radicals and the increase CI radical. The etch profile of SBT thin films in $Cl_2/CF_4/Ar$ plasma is steeper than in $CF_4$/Ar plasma.Ā저會Ā저ﶖ⨀⡌ឫഀĀ᐀會Ā᐀㡆ﶖ⨀쁌ឫഀĀ᐀會Ā᐀遆ﶖ⨀郞ග堂瀀ꀏ會Āﶖ⨀〲岒ऀĀ᐀會Ā᐀䁇ﶖ⨀젲岒Ā㰀會Ā㰀顇ﶖ⨀끩Ā㈀會Ā㈀ﶖ⨀䡪Ā᐀會Ā᐀䡈ﶖ⨀Ā᐀會Ā᐀ꁈﶖ⨀硫Ā저會Ā저ﶖ⨀샟ගကĀ저會Ā저偉ﶖ⨀栰岒ఀĀ저會Ā저ꡉﶖ⨀1岒Ā저會Ā저Jﶖ⨀惝ග؀Ā؀會Ā؀塊ﶖ⨀ග㼀Ā切會Ā切끊ﶖ⨀⣟ගఀĀ搀會Ā搀ࡋﶖ⨀큭킢Ā저會Ā저

• Polymer(Korea)
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• v.36 no.4
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• pp.461-469
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• 2012

The surface modification and characterization of Ar-plasma treated polypropylene (PP) blend are investigated using x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and contact angle measurement. An increase in Ar-plasma treatment time leads to an increase in wettability, oxygen containing polar functional groups, the amount of talc, and surface roughness on the PP blend surface. A careful observation using SEM indicates that there exists a skin layer consisting of only PP component. The difference in viscosity between PP and rubber particles facilities the formation of skin layer. However, it is found that an increase in Ar-plasma treatment time helps to decrease the thickness of skin layer. Additional methodologies for the elimination of skin layer during injection molding are also discussed. The surface modification and morphological alteration induced by Ar-plasma treatment provides a hydrophilic state, followed by the improvement in wettability, on the PP blend surface.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.15-19
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• 2007

This paper reports the effects of Ar ion beam surface treatment on a $SiO_2$ dielectric layer in organic thin film transistors. We compared the electrical properties of pentacene-based OTFTs, treated by $O_2$ plasma or Ar ion beam treatments and characterized the states of the surface of the dielectric by using atomic force microscopy and X-ray photoelectron spectroscopy. For the sample which received $O_2$ plasma treatment, the mobility increased significantly but the on/off current ratio was found very low. The Ar ion beam-treated sample showed a very high on/off current ratio as well as a moderately improved mobility. XPS data taken from the dielectric surfaces after each of treatments exhibit that the ratio of between Si-O bonds and O-Si-O bonds was much higher in the $O_2$ plasma treated surface than in the Ar ion beam treated surface. We believe that our surface treatment using an inert gas, Ar, carried out an effective surface cleaning while keeping surface damage very low, and also the improved device performances was achieved as a consequence of improved surface condition.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1512-1514
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• 2001

In this work, PZT thin films were etched as a function of $Cl_2$/Ar and additive $CF_4$ into $Cl_2$(80%)/Ar(20%). The etch rates of PZT films were 1600 $\AA$/min at $Cl_2$(80%)/Ar(20%) gas mixing ratio and 1973 $\AA$/min at 30% additive $CF_4$ into $Cl_2$(80%)/Ar(20%). Therefore the etch rate of PZT in $CF_4/Cl_2/Ar$ plasma is faster than in $Cl_2$/Ar. From XPS and SIMS analysis, metal halides and C-O, FCI and $CClF_2$ were detected. The etching of PZT films in Cl-based plasma is primarily chemically assisted ion etching and the remove of nonvolatile etch byproducts is the dominant step. Consequently, we suggest that the increase of Cl radicals and the volatile oxy-compound such as $CO_y$ are made by adding $CF_4$ into $Cl_2$/Ar plasma. Therefore, the etch rate of PZT in $CF_4/Cl_2/Ar$ plasma is faster than in $Cl_2$/Ar. The etched profile of PZT films was obtained above 70$^{\circ}$ by the SEM micrograph.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.62-65
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• 2001

$SrBi_2Ta_2O_{9}$ thin films were etched in inductively coupled $Cl_{2}$/$CF_{4}$/Ar plasma. The maximum etch rate was 1060 $\AA\textrm{m}$/min in $Cl_{2}$/$CF_{4}$/Ar (80). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy. The etching of SBT thin films in $Cl_{2}$/$CF_{4}$/Ar were etched by chemically assisted reactive ion etching. The small addition of $Cl_2$ into $CF_4$(20)/Ar(80) plasma will decrease the fluorine radicals and the increase Cl radical.