• Korean Journal of Materials Research
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• v.13 no.9
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• pp.587-592
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• 2003

The thin films of 316L stainless steel were made on glass and S45C substrate by Ion beam assisted deposition with reactive atmosphere of argon and nitrogen. The films were deposited at the various conditions of ion beam power and the ratios of Ar/$N_2$gas. Properties of these films were analyzed by glancing x-ray diffraction method(GXRD), AES, potentiodynamic test, and salt spray test. The results of GXRD showed that austenite phase could be appeared by $N_2$ion beam treatment and the amount of austenite phase increased with the amount of nitrogen gas. The films without plasma ion source treatment had the weak diffraction peak of ferrite phase. But under the Ar plasma ion beam treatment, the strong diffraction peaks of ferrite phase were appeared and the grain size was increased from 12 to 16 nm. Potentiodynamic polarization test and salt spray test indicated that the corrosion properties of the STS 316L films with nitrogen ion source treatment were better than bulk STS 316L steel and STS 316L films with Ar ion source treatment.

• Solar Energy
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• v.20 no.2
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• pp.55-65
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• 2000

Better electrical and optical properties of ITO thin films were demanded for the window layer of CdS/CdTe solar cells. To match that demand, an ion beam sputtering system was used for the deposition of ITO thin films. The substrate temperature and ion beam energy were controlled to deposit high quality ITO thin films in two cases of Ar ion sputtering and Ar+$O_2$ ion sputtering. The microstructure changed from domain structure in ITO deposited by Ar ions to grain structure in ITO deposited by Ar+$O_2$ ions. The lowest resistivity of ITO films was $1.5\times10^{-4}{\Omega}cm$ at $100^{\circ}C$ substrate temperature in case of Ar ions sputtering. Transmittance in the visible range was over 80% above $100^{\circ}C$ substrate temperature.

• Journal of Periodontal and Implant Science
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• v.28 no.2
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• pp.281-291
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• 1998

Chitosan is a biodegradable and non-toxic material with a molecular weight of 800-1,500Kd which can be obtained in various forms with extraordinary chemical structures and biological characteristics of which enables it to be used in many fields as a biomaterial. Ion irradiation is a useful tool to modify chemical structures and physical properties of high molecular weight polymers. The basic hypothesis of this study is that when surface properties of chitosan in a sponge form are modified with ion beam-irradiation and cell adhesion properties of chitosan would improve and thereby increase the regenerative ability of the damaged bone. The purpose of this study was to illuminate the changes in the cytocompatibility of chitosan sponges after ion beam-irradiation as a preliminary research. Argon($Ar^+$) ions were irradiated at doses of $5{\times}10^{13}$, $5{\times}10^{15}$ at 35 keV on surfaces of each sponges. Cell adhesion and activity of alkaline phosphatases were studied using rat fetal osteoblasts. The results of this study show hat ion beam-irradiation at optimal doses($5{\times}10^^{13}\;Ar^+\;ion/cm^2$) is a useful method to improve cytocompatibility without sacrificing cell viability and any changing cell phenotypes. These results show that ion beam-irradiated chitosan sponges can be further applied as carriers in tissue engineering and as bone filling materials.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.95-99
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• 1995

keV ion beam irradiatin for surface modification and thin film growth have been discussed. keV ion beam irradiation in reactive gas environment has been developed for improving wettability of polymer, and for enhancing adhesion to metal film, and adventages of the method have been reviewed. An epitaxial Cu film on Si(100) substrate has been grown by ionized cluster beam and changes of crystallinity and surface roughness have been discussed. Stoichiometric $SnO_2$ films on Si(100) and glass have been grown by a hybrid ion beam Deposition(2 metal ion sources+1 gas ion source), and nonstoichiometric $SnO_2$ films are controlled by various deposition conditions in the HIB. Surface modification for polymer by kev ion irradiation have been developed. Wetting angle of water to PC has been changed from 68 degree to 49 degree with $Ar^+$ irradiation and to 8 degree with $Ar^+$ irradiation and the oxygen environment. Change of surface phenomena in a keV ion beam and characteristics of the grown films are suggested.

• Applied Microscopy
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• v.50
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• pp.22.1-22.6
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• 2020

In-situ transmission electron microscopy (TEM) holders that employ a chip-type specimen stage have been widely utilized in recent years. The specimen on the microelectromechanical system (MEMS)-based chip is commonly prepared by focused ion beam (FIB) milling and ex-situ lift-out (EXLO). However, the FIB-milled thin-foil specimens are inevitably contaminated with Ga⁺ ions. When these specimens are heated for real time observation, the Ga⁺ ions influence the reaction or aggregate in the protection layer. An effective method of removing the Ga residue by Ar⁺ ion milling within FIB system was explored in this study. However, the Ga residue remained in the thin-foil specimen that was extracted by EXLO from the trench after the conduct of Ar⁺ ion milling. To address this drawback, the thin-foil specimen was attached to an FIB lift-out grid, subjected to Ar⁺ ion milling, and subsequently transferred to an MEMS-based chip by EXLO. The removal of the Ga residue was confirmed by energy dispersive spectroscopy.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.3
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• pp.383-388
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• 2011

The cold hollow cathode gas ion source is under development for multi aperture focused ion beam (FIB) system. In this paper, we describe the cold hollow cathode ion source design and the general ion source performance using Ar gas. The glow discharge characteristics and the ion beam current density at various operation conditions are investigated. This ion source can generate maximum ion beam current density of approximately 120 mA/$cm^2$ at ion beam potential of 10 kV. In order to effectively transport the energetic ions generated from the ion source to the multi-aperture focused ion beam(FIB) system, the einzel lens system for ion beam focusing is designed and evaluated. The ions ejected from the ion source can be forced to move near parallel to the beam axis by adjusting the potentials of the einzel lenses.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.143-144
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• 2015

Here we report the Ar-ion milling rates of ultrathin Si and GaAs single crystals. The thickness change is measured using convergent beam electron diffraction (CBED) technique with the help of Bloch wave simulation method. This study suggests the experimental procedures to determine the references for an etching rate to reduce a sample thickness or to remove the damaged sample surface using Ar-ion source.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.547-551
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• 2006

We studied liquid crystal (LC) alignment with ion beam (IB) on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide surface using obliquely ion beam (IB) exposure with new IB type equipment. A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the polyimide surface was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned TN-LCD on polyimide surface. Also, the EO characteristics of the ion-beam-aligned TN-LCD on a polyimide (PI) surface with ion beam exposure using new type IB equipment is same or more superior than ion-beam-aligned TN-LCD on a polyimide (PI) surface with ion beam exposure using Kaufman-type Ar ion gun.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.63-66
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• 2003

It is experimentally shown that a $TiO_2$ film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with $Ar^{+}$ ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between $TiO_2$ film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 $\mu$m depth. The $TiO_2$-Si interface bombarded by $Ar^{+}$ ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the $TiO_2$-Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1505-1509
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• 2004

A novel technique for fine particle beam focusing under the atmospheric pressure is introduced using a radiation pressure assisted aerodynamic lens. To introduce the radiation pressure in the aerodynamic focusing system, a 25 mm plano-convex lens having 2.5 mm hole at its center is used as an orifice. The particle beam width is measured for various laser power, particle size, and flow velocity. In addition, the effect of the laser characteristics on the beam focusing is evaluated comparing an Ar-Ion continuous wave laser and a pulsed Nd-YAG laser. For the pure aerodynamic focusing system, the particle beam width was decreased as increasing particle size and Reynolds number. For the particle diameter of 0.5 ${\mu}m$, the particle beam was broken due to the secondary flow at Reynolds number of 694. Using the Ar-Ion CW laser, the particle beam width becomes smaller than that of the pure aerodynamic focusing system about 16 %, 11.4 % and 9.6 % for PSL particle size of 2.5 ${\mu}m$, 1.0 ${\mu}m$, and 0.5 ${\mu}m$ respectively at the Reynolds number of 320. Particle beam width was minimized around the laser power of 0.2 W. However, as increasing the laser power higher than 0.4 W, the particle beam width was increased a little and it approached almost a constant value which is still smaller than that of the pure aerodynamic focusing system. The radiation pressure effect on the particle beam width is intensified as Reynolds number decreases or particle size increases relatively. On the other hand, using 30 Hz pulsed Nd-YAG laser, the effect of the radiation pressure on the particle beam width was not distinct unlike Ar-Ion CW laser.