• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.86-87
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• 2005

Aluminum(Al) sputtering is best known method to form Al film for the Si wafer in the process of 180nm and above. In the Al metal line process, one of the frequently founded and well-known defect was metal depression. In this paper, several experiments were performed such as temperature, Ar gas flow rate, thickness change in other to reduce the metal depression and find the origination of metal depression. Through experiments, it is found that metal depression was significantly related to the temperature. And the Ar gas flow rate did not influence to the creation of depression. The off status ESC also showed stable metal film without depression by same mechanism of temperature decrease. Also, thickness is strongly influence to the metal depression.

• 한국전기전자재료학회논문지
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• 제32권4호
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• pp.320-326
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• 2019

Recently, the application of atmospheric plasma technology in air filtration is increasing. Sterilization by an atmospheric plasma device is very effective. However, ozone gas, which is generated during atmospheric plasma formation, poses a hazard to human health. To reduce the ozone gas during plasma discharge, we fabricated a one-plate hybrid plasma discharge device with a heating element, which can decompose ozone gas effectively by a simple heating action. In this study, we evaluated the plasma discharge characteristics and ozone concentrations with various Ar flow rates and temperatures. With increasing Ar gas flow rate, the ozone concentration and spectrum intensity increased till an Ar gas flow rate of 60 sccm, and decreased thereafter. When discharged in high temperature, the ozone concentration and spectrum intensity decreased. Further, to evaluate the state of the treated surface under various plasma discharge and heating conditions, we measured the variation in the contact angles on the surface. Regardless of the temperature, the contact angle increased with increasing discharge voltage. However, the contact angle increased when discharged at high temperature.

• 산업융합연구
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• 제21권7호
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• pp.83-92
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• 2023

유전체 전위장벽방전방식에 의한 플라즈마 젯의 블렛 형상은 인가되는 유량과 전기장의 크기에 따라 달라지고 이러한 변화는 DBD 플라즈마 젯의 밀도차이에 의한 스펙트럼 분포의 차이로 나타난다. 발생된 플라즈마 젯의 스펙트럼의 분석을 통한 활성종의 발생과 강도의 차이는 장치를 활용하는데 있어서 중요한 요소이다. 본 논문에서는 Ar가스를 이용한 대기압 볼륨 DBD방식의 플라즈마 젯 발생장치를 제안된 설계방법에 따라 구성하였다. 플라즈마 젯의 발생을 위한 유량의 의존도를 규명하기 위한 Ar가스의 유동해석을 시뮬레이션을 통해 확인하였고 프로토타입 시스템에서는 MFC를 통한 유량제어를 통해 최적의 플라즈마 젯 불렛형상을 발생시키고 발생된 플라즈마 젯의 특성을 분석하기 위해 스펙트로미터를 이용한 플라즈마 젯의 특성을 분석하였다. 제안된 시스템의 설계방법을 통한 장치에서 최적의 플라즈마 젯 형상 확립방법과 EOS 상에서 활성종에 대한 결과를 확인하였다.

• 환경위생공학
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• 제13권1호
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• pp.147-156
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• 1998

A synthesis process for PZT powder using $NH_{3}$ gas as a precipitator in a bubble column reactor was experimentally successful in develope a production process of piezoelectric ceramic PZT powder. Also as a reaction by coprecipitation, the crystalized PZT ceramic powder at the condition of over pH 9 could be attained. The time needed for reaction on the condition of $NH_{3}$ gas flow rate = 0.5 1/min, Ar gas flow rate = 2.0 1/min. Feed flow rate = 2.33 ml/sec was less than five minutes, so it could synthesize PZT powder for such a few moments. And the synthesized PZT powder was $0.17{\mu}m$ in diameter on an average.

• 한국화재소방학회논문지
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• 제10권2호
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• pp.40-51
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• 1996

A synthesis process for PZT powder using NH$_3$ gas as a precipitator in a bubble column reactor was experimentally successful in develope a production process of Piezoelectric ceramic PZT powder. Also as a reaction by coprecipitation, the crystalized PZT ceramic powder at the condition of over pH 9 could be attained. The time needed for reaction on the condition of NH$_3$ gas flow rate=0.5 1/min, Ar gas flow rate=2.0 1/min, Feed flow rate=2.33 ml /sec was less than five minutes, so it could synthesize PZT powder for such a few moments. And the synthesized PZT powder was 0.17${\mu}{\textrm}{m}$ in diameter on an average.

• 한국레이저가공학회지
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• 제1권1호
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• pp.30-38
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• 1998

This study includes the efface of shielding gas types on $CO_2$ laser weldability of low carbon automotive galvanized steel. The types of shielding gas evaluated are He, $CO_2$, Ar, $N_2$, 50%Ar＋50%$N_2$. The weld penetration, strength, formability(Erichsen test) of Laser weld are found to be strongly dependent upon the types of shielding gas used. Further, the maximum travel speed and flow rate to form a keyhole weld is also dependent upon types of shielding gas. The ability of shielding gas in removing plasma plume and thus increasing weld penetration is believed to be closely related with ionization/dissociation potential, which determine the period of plasma formation and disappearance. Further, thermal conductivity and reactivity of gas with molten pool also give strong effect on penetration and porosity formation which in turn affect on the formability and strength.

• 한국재료학회지
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• 제15권10호
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• pp.621-625
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• 2005

Effects of rf power, pressure, sputtering gas composition, and substrate temperature on the deposition rate of the $WC_x$ coatings were investigated. The effects of rf power and sputtering gas composition on the hardness and corrosion resistance of the $WC_x$ coatings deposited by reactive sputtering were also investigated. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) analyses were performed to determine the structures and compositions of the films, respectively. The hardnesses of the films were investigated using a nanoindenter, scanning electron microscopy, ana a salt-spray test, respectively. The deposition rate of the films was proportional to rf power and inversely proportional to the $CH_4$ content of $Ar/CH_4$ sputtering gas. The deposition rate linearly increased with increasing chamber pressure. The hardness of the $WC_x$ coatings Increased as rf power increased. The highest hardness was obtained at a $Ar/CH_4$ concentration of $10 vol.\%$ in the sputtering gas. The hardness of the $WC_x$ film deposited under optimal conditions was found to be much higher than that of the electroplated chromium film, although the corrosion resistance of the former was slightly lower than that of the latter.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.361-365
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• 2003

Planar Inductively Coupled Plasma (PICP) etching of InGaP was performed in $BCl_3,\;BCl_3/Ar\;and\;BCl_3/Ne$ plasmas as a function of ICP source power ($0\;{\sim}\;500\;W$), RIE chuck power ($0\;{\sim}\;150\;W$), chamber pressure ($5\;{\sim}\;15\;mTorr$) and gas composition of $BCl_3/Ar\;and\;BCl_3/Ne$. Total gas flow was fixed at 20 sccm (standard cubic centimeter per minute). Increase of ICP source power and RIE chuck power raised etch rate of InGaP, while that of chamber pressure reduced etch rate. We also found that some addition of Ar and Ne in $BCl_3$ plasma improved etch rate of InGaP. InGaP etch rate was varied from $1580\;{\AA}/min$ with pure $BC_3\;to\;2800\;{\AA}/min$ and $4700\;{\AA}/min$ with 25 % Ar and Ne addition, respectively. Other process conditions were fixed at 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr chamber pressure. SEM (scanning electron microscopy) and AFM (atomic force microscopy) data showed vertical side wall and smooth surface of InGaP at the same condition. Proper addition of noble gases Ar and Ne (less than about 50 %) in $BCl_3$ inductively coupled plasma have resulted in not only increase of etch rate but also minimum preferential loss and smooth surface morphology by ion-assisted effect.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.124-125
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• 2005

ZnS:Mn thin films have attracted great interest as electroluminescence devices. In this study, inductively coupled BCl$_3$/Ar plasma was used to etch ZnS:Mn thin films. We obtained the maximum etch rate of ZnS:Mn thin films was 2209 ${\AA}$/min at a BCl$_3$(20%)/Ar(80%) gas mixing ratio, an RF power of 700 W, a DC bias voltage of-250 V, a total gas flow of 20 sccm, and a chamber pressure of 1 Pa. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• 반도체디스플레이기술학회지
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• 제11권1호
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• pp.29-33
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• 2012

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited under hydrogen atmosphere on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under hydrogen ambient gases (Ar, $Ar+H^2$) at room temperature. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $H^2$ under $Ar+H^2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show good current density-voltage-luminance characteristics. This suggests that flat surface roughness and low electrical resistivity of a-IZO anode film lead to more efficient anode material in OLED devices.