Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
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- Pages.86-87
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- 2005
An investigation on the metal depression of aluminum
알루미늄 Metal Depression에 관한 연구
- Kim, Tae-Gun (Chung-Ang University) ;
- Kim, Nam-Hoon (Chosun University) ;
- Kim, Sang-Yong (Dongbu-Anam Semiconductor Inc.) ;
- Lee, Woo-Sun (Chosun University) ;
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Chang, Eui-Goo
(Chung-Ang University)
- Published : 2005.11.10
Abstract
Aluminum(Al) sputtering is best known method to form Al film for the Si wafer in the process of 180nm and above. In the Al metal line process, one of the frequently founded and well-known defect was metal depression. In this paper, several experiments were performed such as temperature, Ar gas flow rate, thickness change in other to reduce the metal depression and find the origination of metal depression. Through experiments, it is found that metal depression was significantly related to the temperature. And the Ar gas flow rate did not influence to the creation of depression. The off status ESC also showed stable metal film without depression by same mechanism of temperature decrease. Also, thickness is strongly influence to the metal depression.