• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.388-392
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• 2002

In this work, the etching of $CeO_2$ thin films has been performed in an inductively coupled $Ar/CF_4/Cl_2$ plasma. The highest etch rate of the $CeO_2$ thin film ws 250 ${\AA}/min$ and the selectivity of CeO$_2$to SBT was 0.4 at a 10% additive $Cl_2$ into Ar/($Ar+CF_4$)gas mixing ratio of 0.8. From result of X-ray photoelectron spectroscopy (XPS) analysis, there are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. During the etching of $CeO_2$ thin films in $Ar/CF_4/Cl_2$ plama, Ce-Cl and Ce-F bond is formed, and these prodcuts can be removed by the physical bombardment of Ar ions. The 10% additive $Cl_2$ into the Ar/($Ar+CF_4$)gas mixing ratio of 0.8 could enhance the reaction between Cl, F and Ce.

• 열처리공학회지
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• 제18권5호
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• pp.281-287
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• 2005

Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

• 한국레이저가공학회지
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• 제7권2호
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• pp.19-26
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• 2004

The effect of shield gas on the weldability, mechanical properties and formability of CO2 laser weld joint in 600MPa grade high strength steel was investigated. Bead on plate welds were made under various welding speed and shield gas. Tensile test was carried out under the load of perpendicular and parallel direction to the weld line, Formability of the joint was evaluated by Erichsen test. As the welding speed increases, the porosity fraction decreases. The porosity fraction in the joint used Ar-$50\%He$ mixed gas as a shield gas was lower than that of the joint used Ar gas. Hardness at the weld metal of full penetrated joint was nearly equal to that of water quenched raw metal. In a tensile test under a perpendicular load to the weld axis, strength and elongation of joint produced by optimum condition were nearly equal to those of base metal. However, the strength of joint in a tensile test under a parallel load to weld axis was higher than that of raw metal, but the elongation of joint was lower than that of raw metal. Elongation and formability were further increased by the method of using Ar+He mixed gas as a shield gas as compared with Ar gas. Formabilities of joints were recorded ranging from $58\%\;to\;70\%$ of that of base metal with different shield gases.

• 마이크로전자및패키징학회지
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• 제6권2호
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• pp.63-68
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• 1999

가스 감지막의 미세구조와 비화학량론 구조의 변화에 따른 응답특성의 거동을 고찰하기 위하여 소성 조건을 변화시키면서 $WO_3$후막형 가스센서를 제조하였다. 소자는 감지물질인 $WO_3$분말과 유기 용제를 균일하게 혼합한 페이스트를 Au전극과 $RuO_2$발열체가 입혀진 알루미나 기판 위에 스크린 프린팅 방법으로 제조하였다. 소성 조건을 변화시키기 위하여 600-$800^{\circ}C$ 온도범위하에서 1시간 동안 열처리 하였고, Ar과 $O_2$가스의 비율을 변화시키면서 $700^{\circ}C$에서 1시간 재열처리하였다. 열처리 결과, 소성 온도 $700^{\circ}C$에서 제조된 $WO_3$가스센서 소자가 가스감도 210, 응답속도 2초로 가장 좋은 특성을 보였으며 Ar과 $O_2$가스의 비율이 40-50%의 소성 분위기에서 가스 감도가 가장 높게 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.279-283
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• 1998

The electron swarm parameters in the$CF_4$(O.l%, 5%)+Ar mixtures are measured by time of flight method over the E/N(Td) range from 10 to 300LTdl. A two-term approximation of the Boltzmann equation analysis and Monte Carlo simulation have been also used to study electron transport coefficients. We have calculated W, NDL, NDT, $\alpha$ and the limiting breakdown electric field to gas mixtures ratio in pure $CF_4$ gas and$CF_4+Ar$ mixtures. The measured results and the calculated results have been compared each other paper.

• 한국표면공학회지
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• 제35권2호
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• pp.113-121
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• 2002

We have investigated insulating properties of $SiO_2$ interlayer for the thin film strain gauge, which were prepared by RF magnetron sputtering method in various deposition conditions, such as Ar pressure, gas flow rates and sputtering gases. SEM, AFM and FT-IR techniques were used to analyze its structures and composition. As the Ar pressure and the flow rate increased, the insulating interlayer showed low insulating resistance due to its porous structure and defects. Oxygen deficiency in $SiO_2$ was decreased as fabricated by hydrogen reactive sputtering. We could enhance the surface mobility of sputtered adatoms by using Ar/$H_2$ sputtering gas and obtain a good surface roughness and insulating property. The optimum insulating resistance of 9.22 G$\Omega$ was obtained in Ar/30% $H_2$ mixed gas, flow rate 10sccm, and 1mTorr.

• 한국표면공학회지
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• 제42권4호
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• pp.169-172
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• 2009

We investigated the dry-etching mechanism of the TiN thin film using a $Cl_2$/Ar inductively coupled plasma system. To understand the effect of the $Cl_2$/Ar gas mixing ratio, we etched the TiN thin film by varying $Cl_2$/Ar gas mixing ratio. When the gas mixing ratio was 100% $Cl_2$, the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.863-865
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• 2001

In this study, RuO$_2$thin films were etched in inductively coupled $O_2$plasma. Etching characteristics of RuO$_2$thin films including etch rate and selectivity were evaluated as a function of rf power in $O_2$plasma and gas mixing ratio in $O_2$/Ar plasma. In $O_2$ plasma, the etch rate of RuO$_2$thin film increases as rf power increases. In $O_2$/Ar plasma, the etch rate of RuO$_2$thin film increases up to 10% Ar, but decrease with furthermore increasing Ar mixing ratio. The enhanced etch rate can be obtained with increasing rf power and small addition of Ar gas.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권4호
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• pp.204-208
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• 2006

In this study, we investigated the ion energy distributions in a chlorine based inductively coupled plasma by quadrupole mass spectrometer with an electrostatic ion energy analyzer. Ion energy distributions are presented for various plasma parameters such as $BCl_3/Ar$ gas mixing ratio, RF power, and process pressure. As the $BCl_3/Ar$ gas mixing ratio and process pressure decreases, and RF power increases, the saddle-shaped structures is enhanced. The reason is that there are ionized energy difference between $BCl_3$ and Ar, change of plasma potential, alteration of mean free path. and variety of ion collision in the sheath.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.938-941
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• 2000

SrBi$_2$Ta$_2$$O_{9}$(SBT) thin films were etched in Ar/SF$_{6}$ and Ar/CHF$_3$gas plasma using magnetically enhanced inductively coupled plasma(MEICP) system. The etch rates of SBT thin film were 1500$\AA$/min in SF$_{6}$/Ar and 1650 $\AA$/min in Ar/CHF$_3$at a rf power of 600W a dc-bias voltage of -l50V. a chamber pressure of 10 mTorr. In order to examine the chemical reactions on the etched SBT thin film surface , x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were examined. In etching SBT thin film with F-base gas plasma, M(Sr. Bi. Ta)-O bonds are broken by Ar ion bombardment and form SrFand TaF$_2$ by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardmentrdment