• The Korean Journal of Ceramics
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• 제5권4호
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• pp.404-408
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• 1999

Gallium doped zinc oxide(GZO) films were deposited on soda-lime glass substrates without substrate heating $(T_s<50^{\circ}C$) by dc planar magnetron sputtering using GZO ceramic oxide targe with different inert gas (Ar, or Ne). For the GZO films deposited under different total gas pressure $(P_{tot})$, structural and electrical properties were investigated by XRD and Hall effect measurements. Crystallinity of GZO films deposited using Ar was degraded with increase in $(P_{tot})$, suggesting that it was heavily affected by kinetic energy of sputtered Zn particles$(PA_{zn})$ arriving at substrate surface. Whereas, crystallinity of GZO films deposited at lower Ptot than 3.0 Pa using Ne gas was degraded with decrease in $(P_{tot})$. This degradation was considered to be result of film damage caused by the bombardment of high-energy neutrals ($Ne^{\circ}$). On the basis of a hard sphere collision processes, the average final energy of particles (sputtered Zn, $Ar^{\circ}$and $Ne^{\circ}$)arriving at substrate surface were estimated.

• Journal of Advanced Marine Engineering and Technology
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• 제35권2호
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• pp.252-257
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• 2011

본 연구에서는 초경량성 마그네슘 재료를 엔진 블록, 실린더 헤드커버 등과 같은 박용기관에 적용하기 위한 환경 친화적 표면처리의 개발에 대하여 고찰하였다. 또한 이온플레이팅법에 의해 마그네슘 박막을 제작하고, 그 제작조건에 따라 변화하는 막의 결정배향성과 몰포로지가 경도특성에 미치는 영향을 해명하고자 하였다. 마그네슘 박막의 경도측정 결과, 아르곤 가스압의 증가에 따라 그 경도값이 상승하였 는데, 그 원인은 결정립계에 의한 강화와 성분 외 가스입자의 흡장효과에 의한 것으로 사료된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.867-869
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• 1999

In this study, $SrBi_{2}Ta_{2}O_{9}$(SBT) thin films were etched as a function of $SF_6$/Ar gas mixing ratio in magnetically enhanced inductively coupled plasma(MEICP) system fer a fixed rf power, dc-bias voltage, and chamber pressure. The etch rate of SBT thin film was $1500{\AA}/min$ and the selectivities of photoresist (PR) and $SiO_2$ to SBT thin film were 0.48 and 0.62, respectively when the samples were etched at a rf power of 600W, a dc-bias voltage of -150V, a chamber pressure of 10 mTorr and a gas mixing ratio of $SF_6/(SF_6+A)$=0.1. In order to examine the chemical reactions on the etched surface, X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry(SIMS) were done.

• Transactions on Electrical and Electronic Materials
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• 제8권6호
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• pp.229-233
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• 2007

In this study, we carried out an investigation of the etching characteristics(etch rate, selectivity) of $HfO_2$ thin films in the $CH_4/Ar$ inductively coupled plasma. It was found that variations of input power and negative dc-bias voltage are investigated by the monotonic changes of the $HfO_2$ etch rate as it generally expected from the corresponding variations of plasma parameters. At the same time, a change in either gas pressure or in gas mixing ratio result in non-monotonic etch rate that reaches a maximum at 2 Pa and for $CH_4(20%)/Ar(80%)$ gas mixture, respectively. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4-containing$ plasmas.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1236-1238
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• 1994

TiAlN thin films were prepared by a multi target r.f magnetron sputtering system under different conditions. We have investigated the resistivity and T.C.R. (Temperature Coefficient of Resistance) characteristics of TiAlN films deposited on $Al_2O_3$ and glass substrates by sputtering in an $Ar:N_2$ gas mixture. We used Al and Ti metal as Target Material and $Ar:N_2$ gas as working gas. We varied the partial pressure ratio of $N_2/Ar$ from 0.2/7 to 1.0/6.2 (SCCM). And the R.F power of Ti and Al Target also were varied as 160/240, 200/200 and 240/160(W). In this experiment, we can get the precision thin film resistor with a very low T.C.R. (Temperature Coefficient of Resistance) below 25 ppm ${\Omega}/^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• 제25권1호
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• pp.73-78
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• 2004

A highly sensitive detecting method has been developed for determining part per billion of sulfur in $H_2S$/Ar plasma. The method is based on the excitation of Ar/$H_2S\;or\;Ar/H_2S/O_2$ mixture in hollow cathode glow discharge sustained by radiofrequency (RF) or 60 Hz AC power and the spectroscopic measurement of the intensity of emission lines from electronically excited $S_2^*\;or\;SO_2^*$ species, respectively. The RF or AC power needed for the excitation did not exceed 30 W at a gas pressure maintained at several mbar. The emission intensity from the $SO_2^*$ species showed excellent linear response to the sulfur concentration ranging from 5 ppbv, which correspond to S/N = 5, to 500 ppbv. But the intensity from the $S_2^*$ species showed a linear response to the $H_2S$ only at low flow rate under 20 sccm (mL/min) of the sample gas. Separate experiments using $SO_2$ gas as the source of sulfur demonstrated that the presence of $O_2$ in the argon plasma is essential for obtaining prominent $SO_2^*$ emission lines.

• KSTLE International Journal
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• 제4권2호
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• pp.56-59
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• 2003

Boron carbide thin coatings were deposited on silicon wafers by DC magnetron sputtering using a ${B}_4$C target with Ar as processing gas. Various amounts of methane gas (${CH}_4$) were added in the deposition process to better understand their influence on tribological properties of the coatings. Reciprocating wear tests employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. The chemical characteristics of the coatings and worn surfaces were studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). It revealed that ${CH}_4$addition to Ar processing gas strongly affected the tribologcal properties of sputtered boron carbide coating. The coefficient of friction was reduced approximately from 0.4 to 0.1, and wear resistance was improved considerably by increasing the ratio of ${CH}_4$gas component from 0 to 1.2 vol %. By adding a sufficient amount of ${CH}_4$(1.2 %) in the deposition process, the boron carbide coating exhibited lowest friction and highest wear resistance.

• 암석학회지
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• 제10권3호
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• pp.172-178
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• 2001

1997읜 이후 한국기초과학지원연구원에 K-Ar 연대 측정 시스템이 도입되어 현재 이용중이다. 이 시스템은 흑연전기로, 가스 전처리 장치, 질량분석기와 자료획득장치로 구성되어 있으며 K-Ar연대 측정은 $^{38}$ Ar을 스파이크로 이용하는 동위원소 희석법에 의한 정밀한 Ar 농도 측정과 원자흡광분석을 통한 K 정량분석에의해 이루어진다. 연대가 잘 알려진 K-Ar 연대측정용 표준물질을 이용하여 시스템의 정밀성과 정확성을 확인하였다. 백만년 이하의 연대를 갖는 시료의 경우 질량분석기의 감도와 질량차별지수의 미약한 변화에도 큰영향을 받기 때문에 정확한 연대 측정이 곤란하나 중생대 및 제 3기의 K-Ar 연대를 갖는 표준시료의 연대를 측정했을 때, 믿을 만한 결과를 내고 있다. $92.6\pm$0.6 Ma의 연대가 알려진 SORI93혹운모의 경우 92.1$\pm$1.1 Ma의 연대를 얻을 수 있었고, $18.5\pm$0.6 Ma의 Bern4M 백운모는 권고치와 유사한 $17.8\pm$0.2 Ma의 연대를 얻을 수 있었다. .

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1074-1077
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• 2003

우리는 AC-PDP에서 휘도와 효율을 향상시키기 위하여 Ne-Xe(4%)와 He(7)-Ne(3)-Xe(3%)에 소량의 Ar 또는 Kr를 첨가하여 최적의 페닝 방전가스 혼합비를 연구하였다. 우리는 이것을 증명하기 위해 효율과 Q-V 방법을 이용하여 벽전하를 계산하였으며, 2차원 시뮬레이션에서의 결과값과 비교하였다. 200 Torr 압력에서 He-Ne-Xe 또는 Ne-Xe에 소량의 Ar(0.01-0.1%) 또는 Kr(0.01-0.1%)을 첨가시켰을 때, 우리는 20% 이상의 휘도의 증가와 25% 이상의 효율 증가를 발견하였고, 또한 벽전하도 25% 이상의 증가를 보였다. 400 Torr 압력에서 He-Ne-Xe-Kr(0.005%)에 소량의 Ar(0.005-0.1%)를 첨가시켰을 때는 8% 이상의 휘도의 증가와 18% 이상의 효율 증가, 12% 이상의 벽전하 증가를 확인하였다. 결론적으로 이 결과는 He, Ne, Ar, Kr 사이에 추가적인 페닝효과가 휘도와 효율을 향상시켰다는 것을 보여준다.

• 한국전기전자재료학회논문지
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• 제20권10호
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• pp.846-851
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• 2007

In this work, the etching characteristics of $Ge_2Sb_2Te_5(GST)$ thin films were investigated using an inductively coupled plasma (ICP) of $Cl_2/Ar$ gas mixture. To analyze the etching mechanism, an optical emission spectroscopy (OES) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out. The etch rate of the GST films decreased with decreasing Ar fraction. At the same time, high selective etch rate over $SiO_2$ films was obtained and the selectivity over photoresist films decreased with increasing the he fraction. From XPS results, we found that Te halides were formed at the etching surface and Te halides limited the etch rate of the GST films.