• Journal of Korea Foundry Society
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• v.15 no.2
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• pp.175-183
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• 1995

It is difficult to remove such interstitial impurities as sulfur, oxygen, hydrogen and carbon in Fe-Ni alloys. Thermodynamic and kinetic studies were carried out on the behavior of hydrogen gas, oxygen gas, Si, Al and slag, and the reaction time by the $Ar/Ar-H_2$ plasma and electron beam melting. After the addition of Al, Si, they were melted by Ar plasma with reaction time changed. 80%Ni-Fe alloys showed a better deoxidation than 36%Ni-Fe alloys. At $Ar-H_2$ plasma melting, the deoxidation was significant. In the case of the electron beam melting, the residual oxygen was higher than in Ar plasma melting because electron beam melting temperature was lower than that of Ar plasma. For the decaburization, it was melted by $Ar-O_2$ plasma melting, which could remove effectively carbon by activated oxygen in plasma. We added slag to Fe-Ni alloys for the desulfurization. As the result of this experiments, the amount of residual sulfur was not changed according to the slag ratio and reaction time.

• Journal of Welding and Joining
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• v.27 no.3
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• pp.38-43
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• 2009

The optimization of the welding parameters was studied to maximize the weldability and minimize the amount of spatter in the MAG welding of automotive steel sheets under different shielding gas composition ratio. JS-EFSC, JS-SPHC steel plates and Ar mixture gases were used as a substrate and shielding gas for welding respectively. The five welding parameters were selected through preliminary experiments and their effects on the weldability were analyzed. Experiments were performed using the Taguchi experimental method. As results, appropriate range for welding could be achieved. Amount of spatter in 80%Ar+20%$CO_2$ shielding gas was 20% of that of $CO_2$welding. Therefore, in terms of high productivity and welding cost, Ar mixture gas(80%Ar+20%$CO_2$) was recommended as a shielding gas for application of MAG process, indicating the low spatter and good weld quality.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.69-76
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• 1993

The statistical methodology using RSM (response surface method) was used too ptimize the deposition conditions of selective CVD tungsten process for improving the deposition rate and the adhesion property. Temperature, flow rate of SiH$_4$ and WF$_6$ and H$_2$ and Ar carrier gases were chosen for the deposition variables and process characteristics due to carrier gas were intensively investigated. It was observed that temperature was the main factor influencingthe deposition rate in the case of H$_2$ carrier gas while the reactant ratio, $SiH_{4}/WF_{6}$, had the principal effect on the deposition rate in the case of Ar carrier gas. The increased deposition rate and the good adhesion to Si were obtained under Ar carrier gas compared to H$_2$ carrier gas. The optimum conditions for deposition rate and antipeeling property were found to be the temperature range of 300~32$0^{\circ}C$ and the reactant ratio, $SiH_{4}/WF_{6}$, of 0.5~0.6.

• International Journal of Advanced Culture Technology
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• v.3 no.1
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• pp.169-178
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• 2015

This research aims to study the effects of various welding parameters in gas metal arc welding (GMAW) process on welding penetration, microstructure and hardness of AS3578-A350 high strength steel with the thickness of 10 mm. The welding process parameters were a welding current of 100-200A, an arc voltage of 20-30V, a welding speed of 20-60 cm/min and a gas shielding type of Ar and $Ar+CO_2$. The summarized experimental results are as follows. An increase of the welding current and voltage affected to increase the penetration depth of the joint. However, when the welding speed was decreased, it increased the penetration depth of the joint. Using the Ar gas for shielding the weld area, produced the higher penetration depth and the less narrow weld bead than the joint that was shielded by the mix gas of $Ar+CO_2$. The variation of the welding process parameters affected to produce the various microstructures of weld metal and heat affected zone and also showed the various kind of hardness along the weld joint.

• Korean Journal of Metals and Materials
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• v.47 no.2
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• pp.107-113
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• 2009

Molten iron with 2 mass % carbon content was decarbonized at 1823 K~1923 K by bubbling $Ar+O_2$ gas through a submerged nozzle. The reaction rate was significantly influenced by the oxygen partial pressure and the gas flow rate. Little evolution of CO gas was observed in the initial 5 seconds of the oxidation; however, this was followed by a period of high evolution rate of CO gas. The partial pressure of CO gas decreased with further progress of the decarbonization. The overall reaction is decomposed to two elementary reactions: the decarbonization and the dissolution rate of oxygen. The assumptions were made that these reactions are at equilibrium and that the reaction rates are controlled by mass transfer rates within and around the gas bubble. The time variations of carbon and oxygen contents in the melt and the CO partial pressure in the off-gas under various bubbling conditions were well explained by the mathematical model. Based on the present model, it was explained that the decarbonization rate of molten iron was controlled by gas-phase mass transfer at the first stage of reaction, but the rate controlling step was transferred to liquid-phase mass transfer from one third of reaction time.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.3
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• pp.566-570
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• 2007

The specific electrical, optical and acoustic properties of Zinc Oxide (ZnO) are important for semiconductor process which has many various applications. Piezoelectric ZnO films has been widely used for such as transducers, bulk and surface acoustic-wave resonators, and acousto-optic devices. In this study, we investigated etch characteristics of ZnO thin films in inductively coupled plasma etch system with $BCl_3/Ar$ gas mixture. The etching characteristics of ZnO thin films were investigated in terms of etch rates and selectivities to $SiO_2$ as a function of $BCl_3/Ar$ gas mixing ratio, RF power, DC bias voltage and process pressure. The maximum ZnO etch rate of 172 nm/min was obtained for $BCl_3$ (80%)/Ar(20%) gas mixture. The chemical states on the etched surface were investigated with X-ray photoelectron spectroscopy (XPS).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.616-621
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• 1999

A planar inductively coupled $CH_4/H_2/Ar$plasma was used to investigate dry etch characteristics of GaN as a function of input power, RF bias power, and etch gas composition. Etch rate of GaN increased with input power up to 600 W and was saturated at the higher power. Also, the etch rates increased with increasing RF bias power, composition of $CH_4$ and Ar gas. We achieved the maximum etch rate of $930{\AA}$/min at the input power 400 W, RF bias power 250 W, and operational pressure 10 mTorr. This paper shows that smooth etched surface having roughness less than 1 nm in rms can be obtained by using planar inductively coupled plasma with $CH_4/H_2/Ar$ gas chemistry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.276-279
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• 2011

This work, the etching characteristics of $Ba_2Ti_9O_{20}$(BTO) thin films were investigated using an inductively coupled plasma (ICP) of $Ar/Cl_2$ gas mixture. The etch rate of BTO thin films as well as the $BTO/SiO_2$ and BTO/PR etch selectivity were measured as functions of $Ar/Cl_2$ mixing ratio (0~100% Ar) at a constants gas pressure (6 mTorr), total gas flow rate (50 sccm), input power (700 W) and bias power (200 W). The etch rate of BTO thin films decreased with increasing Ar fraction. To analyze the etching mechanism an optical emission spectroscopy (OES), double Langmuir probe(DLP) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.617-624
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• 2000

Zinc Oxide(ZnO) thin films on Si(100) substrate were deposited by RF magnetron reactive sputtering. The charcteristics of ZnO thin films on argon/oxygen(Ar/O$_2$)gas ratios RF power and substrate temperature were investigated by XRD, SEM, and AFM analyses. C-axis preferred orientation resistivity and surface roughness highly depended on Ar/O$_2$gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of 9$\times$10$^{7}$ $\Omega$cm was obtained at a working pressure of 10 mTorr with Ar/O$_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with Ar/O$_2$=50/50 showed the excellent roughness value of 28.7$\AA$.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.05a
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• pp.281-284
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• 2004

Mean energy of electrons in $SF_6-Ar$ Mixtures Gas used by MCS-BEq algorithm has been analysed over the E/N range $30{\sim}300[Td]$ by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6-Ar$, 0.1[%] and 5.0[%], $SF_6-Ar$ mixtures were measured by time-of-flight(TOF) method. The transport Coefficients for electrons in (100[%])$SF_6$. (100[%])Ar, (0.2[%])$SF_6-Ar$ and (0.5[%]) $SF_6-Ar$, (5.0[%]) $SF_6-Ar$, (0.1[%])$SF_6-Ar$ mixtures were measured by time-of-flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.