• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.90-94
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• 2015

In this study, the characterizations of oxide contact hole etching are investigated with C₄F₈/O₂/Ar and CH₂F₂/C₄F₈/O₂/ Ar plasma. As the percent composition of C₄F₈ in a C₄F₈/O₂/Ar mixture increases, the amount of polymer deposited on the etched surface also increases because the C_xF_y polymer layer retards the reaction of oxygen atoms with PR. Adding CH₂F₂ into the C₄F₈/O₂/Ar plasma increases the etch rate of the oxide and the selectivity of oxide to PR. The profile of contact holes was close to 90°, and no visible residue was seen in the SEM image at a C₄F₈/(C₄F₈+O₂) ratio of 58%. The changes of chemical composition in the chamber were analyzed using optical emission spectroscopy, and the chemical reaction on the etched surface was investigated using X-ray photoelectron spectroscopy.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.635-639
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• 2003

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.28.2-28.2
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• 2007

• Journal of environmental and Sanitary engineering
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• v.13 no.2
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• pp.82-87
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• 1998

The opening temperature of emit heat, caloric value and decomposition hear were investigated by DSC & TGA in order to find the hazard of sanitary feed-stuff, also explosion hazard of dust was observed with electrical ignition after fodder dispersion by compressed air. Then opening temperature of emit heat of supporting gas. $O_{2}$ was much lower than inert gas. Ar. and caloric value increased 20. and the particle size of sanitary feed-stuff were appeared fire or explosion at 50/60 mesh and 60/80 mesh.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.825-826
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• 2009

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1515-1518
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• 2009

Hydrophobic treatments were conducted for different kinds of substrates, glass substrate, silicon wafer and plastic substrate. Ar-$CH_4$ gas mixture was used as a discharge gas for the hydrophobic treatment. The change of the contact angle before and after treatment was measured and compared. Time evolution of the contact angle change after hydrophobic treatment was investigated.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.97-98
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• 2007

$SiH_4-Ar-O_2$ ICP-CVD에서 증착된 $SiO_2$막의 두께 균일도를 개선시키기 위해 반응가스 주입구의 위치가 두께 균일도에 영향을 주었을 것으로 예상하고, CFD-ACE를 이용하여 2차원 모델링을 하여 최적데이타를 도출하였다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.4
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• pp.354-361
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• 2008

Cold rolled steel sheet for automotive was treated by Ar/$O_2$ atmospheric pressure plasma to improve the adhesive bonding strength. Through the contact angle test and calculation of surface free energy for cold rolled steel sheet, the changes of surface properties were investigated before and after plasma treatment. The contact angle was decreased and surface free energy was increased after plasma treatment. And the change of surface roughness and morphology were observed by AFM(Atomic Force Microscope). The surface roughness of steel sheet was slightly changed. Based on Taguchi method, single lap shear test was performed to investigate the effect of experimental parameter such as plasma power, treatment time and flow rate of $O_2$ gas. Results shows that the bonding strength of steel sheet treated in Ar/$O_2$ atmospheric pressure plasma was improved about 20% compared with untreated sheet.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.16-19
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• 2002

(Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.117-119
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• 2003

The $Pb(Zr_{0.3}Ti_{0.7)O_3/Pb(Zr_{0.7}/Ti_{0.3})O_3$ [PZT(30/70)/(70/30)] heterolayered thin films were deposited by RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrate. Sputter gas ratio(AR/O2) was changed form 90/10 to 50/50. The structural properties and electrical properties of the PZT(30/70)/ (70/30) heterolayered thin films were studied. The relative dielectric constant and dielectric loss at 100Hz of the PZT(30/70)/PZT(70/30) heterolayered thin films with Ar/$O_2$(80/20) ratio were about 982 and 0.036, respectively.