• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.834-837
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• 2004

BST thin films were etched with inductively coupled $CF_4(C1_2+Ar)$ Plasmas. The maximum etch rate of the BST thin films was 53.6 nm/min for a 10 % $CF_4$ to the $Cl_2/Ar$ gas mixture at RF power of 700 W, DC bias of -150 V, and chamber pressure of 2 Pa. Small addition of $CF_4$ to the $Cl_2/Ar$ mixture increased chemical effect. Consequently, the increased chemical effect caused the increase in the etch rate of the BST thin films. To clarify the etching mechanism, the surface reaction of the BST thin films was investigated by X-ray photoelectron spectroscopy.

• Bulletin of the Korean Chemical Society
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• v.12 no.1
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• pp.87-92
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• 1991

A dual capillary column system is described for the simultaneous measurement of retention index (RI) and area ratio (AR) values of each peak on two capillary columns of different polarity, DB-5 & DB-1701. Both capillary columns were connected to a common splitless injector via a deactivated fused-silica capillary tubing of 1 m length and a 'Y' splitter, the dead volume effect of which was found to be negligible. RI and AR were measured with high reproducibility(${\leq}$0.05% RSD) and with high accuracy (<10% RE), respectively. When applied to the test samples of the organic acid mixture, each acid was positively identified by the combined computer RI library search-AR comparison.

• The Journal of the Petrological Society of Korea
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• v.23 no.4
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• pp.385-391
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• 2014

Quaternary basaltic rocks occur as volcanic plateau and/or river cliff in the watershed area of Hantan River in Jeongok, central Korea. We measured $^{40}Ar-^{39}Ar$ ages for the basaltic rocks from Jeongok area using the multi-collector noble gas mass spectrometer and laser heating device introduced for the first time in Korea. The basaltic rocks from the river cliff in Eundae-ri area show the systematic change in $^{40}Ar-^{39}Ar$ ages from $0.54{\pm}0.07Ma$ through $0.48{\pm}0.01Ma$ to $0.12{\pm}0.01Ma$ toward the top. The other sample from Jeongok-ri area yields the age of $0.43{\pm}0.04Ma$. This results suggest that there might be a episodic volcanic eruption between 0.12-0.54 Ma in Jeongok area.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.1
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• pp.19-23
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• 2011

Recently, focused ion beam (FIB) applications have been investigated for the modification of VLSI circuit, the MEMS processing, and the localized ion doping, A multi aperture FIB system has been introduced as the demands of FIB applications for high speed and large area processing increase. A liquid metal ion source has problems, a large angular divergence and a metal contamination into a substrate. In this study, a gas ion source was introduced to replace a liquid metal ion source. The gas ion source generated inductively coupled plasma (ICP) in a quartz tube (diameter: 45 mm). Ar gas fed into the quartz was ionized by a 2 turned radio frequency antenna. The Ar ions were extracted by 2 extraction grids. The maximum extraction voltage was 10 kV. A numerical simulation was used to optimize the design of extraction grids and to predict an ion trajectory. As a result, the maximum ion current density was 38 $mA/cm^2$ and the spread of ion energy was 1.6 % for the extraction voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1028-1032
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• 2009

In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the $SiO_x$ film with oxygen concentration($O_2/Ar+O_2$) of 3.3% and the $SiO_xN_y$ film with nitrogen concentration($N_2/Ar+O_2+N_2$) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the $SiO_x$ and/or $SiO_xN_y$ films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over $10^{-1}\;g/m^2{\cdot}day$ compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the $SiO_xN_y$ film.

• Journal of Powder Materials
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• v.27 no.2
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• pp.139-145
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• 2020

The powder manufacturing process using the gas atomizer process is easy for mass production, has a fine powder particle size, and has excellent mechanical properties compared to the existing casting process, so it can be applied to various industries such as automobiles, electronic devices, aviation, and 3D printers. In this study, a modified A4032-xSn (x = 0, 1, 3, 5, and 10 wt.%) alloy with low melting point properties is investigated. After maintaining an argon (Ar) gas atmosphere, the main crucible is tilted; containing molten metal at 1,000℃ by melting the master alloy at a high frequency, and Ar gas is sprayed at 10 bar gas pressure after the molten metal inflow to the tundish crucible, which is maintained at 800℃. The manufactured powder is measured using a particle size analyzer, and FESEM is used to observe the shape and surface of the alloy powder. DSC is performed to investigate the change in shape, according to the melting point and temperature change. The microstructure of added tin (Sn) was observed by heat treatment at 575℃ for 10 min. As the content of Sn increased, the volume fraction increased to 1.1, 3.1, 6.4, and 10.9%.

• Journal of the Korean Magnetics Society
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• v.11 no.4
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• pp.146-150
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• 2001

The effect of H$_2$ content in Ar sputtering gas on exchange coupling field(H$_{ex}$) for NiFe/FeMn interface was studied. When NiFe layer of Si(100)/Ta(50 $\AA$)/NiFe(60 $\AA$)/FeMn(250 $\AA$)Ta(50 $\AA$) was deposited at 8% H$_2$ in sputtering gas, the maximum exchange coupling field(H$_{ex}$) and minimum coercivity(H$_{c}$) were obtained. When Si(100)/Ta(50 $\AA$)/NiFe(60 $\AA$)/FeMn(250 $\AA$)/NiFe(70 $\AA$)/Ta(50 $\AA$) was deposited at 5% H$_2$ in sputtering gas, the maximum exchange coupling field(H$_{ex}$) of 148 Oe was obtained. The (111) preferred orientation and grain size of underlayer NiFe were increased and the internal stress was reduced by H$_2$ in sputtering gas. And the (111) preferred orientation and grain size of FeMn layer were also increased.d.ased.

• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.116-121
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• 2009

The 2-step low temperature plasma processes (the combined carburizing and post-nitriding) offer the increase of both surface hardness and thickness of hardened layer and corrosion resistance than the individually processed low temperature nitriding and low temperature carburizing techniques. The 2-step low temperature plasma processes were carried out for improving both the surface hardness and corrosion resistance of AISI 316L stainless steel. The influence of gas compositions on the surface properties during nitriding step were investigated. The expanded austenite (${\gamma}_N$) was formed on all of the treated surface. The thickness of ${\gamma}_N$ and concentration of N on the surface increased with increasing both nitrogen gas and Ar gas levels in the atmosphere. The thickness of ${\gamma}_N$ increased up to about $20{\mu}m$ and the thickness of entire hardened layer was determined to be about $40{\mu}m$. The surface hardness was independent of nitrogen and Ar gas contents and reached up to about 1200 $HV_{0.1}$ which is about 5 times higher than that of untreated sample (250 $HV_{0.1}$). The corrosion resistance in 2-step low temperature plasma processed austenitic stainless steels was also much enhanced than that in the untreated austenitic stainless steels due to a high concentration of N on the surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.581-582
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• 2005

In order to apply the discharge plasma processing. to industrial areas, the control of the chemical reaction mechanism is necessary. The hybrid plasma reactor was designed for the effective treatment of wastewater and hazardous volatile organic substances. This plasma reactor was similar to the barrier discharge, and surface discharge on the dielectric surface was propagated to the water surface strongly for the heterogeneous chemical reaction at the interface between the working gas and the water surface. The discharge emission in this discharge reactor was mainly $N_2$ second positive band in the case of $N_2$ or air gas atmosphere, and intensities from OH radicals in Ar gas atmosphere were stronger than in $N_2$ or air gas atmosphere. From this result, it is necessary to apply Ar gas for the effective generation of OH radicals in this plasma reactor.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.370-377
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• 1994

DC plasma torch which is a non-transferred type was constructed and silicon nitride powders were produced. Ar gas is used as a plasma gas and gas reactants with the carrier gas are introduced beneath the plasma ignition part. Two slits are attached and a reactive quenching gas is introduced through them. Using $SiCl_4 and NH_3$ as starting materials, silicon nitride powders were produced. As-produced powders were amorphous and crystalline silicon nitrides were obtained by heating at $1420^{\circ}C$ for two hours under nitrogen atmosphere. Silicon nitride phase was identified in the XRD patterns and IR spectrum, and the image of the powders before and after heating was observed from the TEM analysis.