• The Korean Journal of Ceramics
• /
• v.5 no.4
• /
• pp.404-408
• /
• 1999

Gallium doped zinc oxide(GZO) films were deposited on soda-lime glass substrates without substrate heating $(T_s<50^{\circ}C$) by dc planar magnetron sputtering using GZO ceramic oxide targe with different inert gas (Ar, or Ne). For the GZO films deposited under different total gas pressure $(P_{tot})$, structural and electrical properties were investigated by XRD and Hall effect measurements. Crystallinity of GZO films deposited using Ar was degraded with increase in $(P_{tot})$, suggesting that it was heavily affected by kinetic energy of sputtered Zn particles$(PA_{zn})$ arriving at substrate surface. Whereas, crystallinity of GZO films deposited at lower Ptot than 3.0 Pa using Ne gas was degraded with decrease in $(P_{tot})$. This degradation was considered to be result of film damage caused by the bombardment of high-energy neutrals ($Ne^{\circ}$). On the basis of a hard sphere collision processes, the average final energy of particles (sputtered Zn, $Ar^{\circ}$and $Ne^{\circ}$)arriving at substrate surface were estimated.

• Journal of Advanced Marine Engineering and Technology
• /
• v.35 no.2
• /
• pp.252-257
• /
• 2011

Magnesium thin films for marine engine parts such as the engine block and the cylinder head cover etc. were prepared on the magnesium alloy(AZ91D) substrate by Thermo-electron activated Ion-plating method. The influence of gas pressure and substrate bias voltages on the crystal orientation and morphology of the films was investigated with X-ray diffraction and field emission scanning electron microscope(FE-SEM), respectively. Moreover, the effect of crystal orientation and morphology of the magnesium films on the its hardness property was investigated as well. From the results, the hardness of the films was increased in Ar gas pressure due to the grain boundary strengthening and occlusion effects.

• Proceedings of the KIEE Conference
• /
• 1999.11d
• /
• pp.867-869
• /
• 1999

In this study, $SrBi_{2}Ta_{2}O_{9}$(SBT) thin films were etched as a function of $SF_6$/Ar gas mixing ratio in magnetically enhanced inductively coupled plasma(MEICP) system fer a fixed rf power, dc-bias voltage, and chamber pressure. The etch rate of SBT thin film was $1500{\AA}/min$ and the selectivities of photoresist (PR) and $SiO_2$ to SBT thin film were 0.48 and 0.62, respectively when the samples were etched at a rf power of 600W, a dc-bias voltage of -150V, a chamber pressure of 10 mTorr and a gas mixing ratio of $SF_6/(SF_6+A)$=0.1. In order to examine the chemical reactions on the etched surface, X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry(SIMS) were done.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.6
• /
• pp.229-233
• /
• 2007

In this study, we carried out an investigation of the etching characteristics(etch rate, selectivity) of $HfO_2$ thin films in the $CH_4/Ar$ inductively coupled plasma. It was found that variations of input power and negative dc-bias voltage are investigated by the monotonic changes of the $HfO_2$ etch rate as it generally expected from the corresponding variations of plasma parameters. At the same time, a change in either gas pressure or in gas mixing ratio result in non-monotonic etch rate that reaches a maximum at 2 Pa and for $CH_4(20%)/Ar(80%)$ gas mixture, respectively. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4-containing$ plasmas.

• Proceedings of the KIEE Conference
• /
• 1994.07b
• /
• pp.1236-1238
• /
• 1994

TiAlN thin films were prepared by a multi target r.f magnetron sputtering system under different conditions. We have investigated the resistivity and T.C.R. (Temperature Coefficient of Resistance) characteristics of TiAlN films deposited on $Al_2O_3$ and glass substrates by sputtering in an $Ar:N_2$ gas mixture. We used Al and Ti metal as Target Material and $Ar:N_2$ gas as working gas. We varied the partial pressure ratio of $N_2/Ar$ from 0.2/7 to 1.0/6.2 (SCCM). And the R.F power of Ti and Al Target also were varied as 160/240, 200/200 and 240/160(W). In this experiment, we can get the precision thin film resistor with a very low T.C.R. (Temperature Coefficient of Resistance) below 25 ppm ${\Omega}/^{\circ}C$.

• Bulletin of the Korean Chemical Society
• /
• v.25 no.1
• /
• pp.73-78
• /
• 2004

A highly sensitive detecting method has been developed for determining part per billion of sulfur in $H_2S$/Ar plasma. The method is based on the excitation of Ar/$H_2S\;or\;Ar/H_2S/O_2$ mixture in hollow cathode glow discharge sustained by radiofrequency (RF) or 60 Hz AC power and the spectroscopic measurement of the intensity of emission lines from electronically excited $S_2^*\;or\;SO_2^*$ species, respectively. The RF or AC power needed for the excitation did not exceed 30 W at a gas pressure maintained at several mbar. The emission intensity from the $SO_2^*$ species showed excellent linear response to the sulfur concentration ranging from 5 ppbv, which correspond to S/N = 5, to 500 ppbv. But the intensity from the $S_2^*$ species showed a linear response to the $H_2S$ only at low flow rate under 20 sccm (mL/min) of the sample gas. Separate experiments using $SO_2$ gas as the source of sulfur demonstrated that the presence of $O_2$ in the argon plasma is essential for obtaining prominent $SO_2^*$ emission lines.

• KSTLE International Journal
• /
• v.4 no.2
• /
• pp.56-59
• /
• 2003

Boron carbide thin coatings were deposited on silicon wafers by DC magnetron sputtering using a ${B}_4$C target with Ar as processing gas. Various amounts of methane gas (${CH}_4$) were added in the deposition process to better understand their influence on tribological properties of the coatings. Reciprocating wear tests employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. The chemical characteristics of the coatings and worn surfaces were studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). It revealed that ${CH}_4$addition to Ar processing gas strongly affected the tribologcal properties of sputtered boron carbide coating. The coefficient of friction was reduced approximately from 0.4 to 0.1, and wear resistance was improved considerably by increasing the ratio of ${CH}_4$gas component from 0 to 1.2 vol %. By adding a sufficient amount of ${CH}_4$(1.2 %) in the deposition process, the boron carbide coating exhibited lowest friction and highest wear resistance.

• The Journal of the Petrological Society of Korea
• /
• v.10 no.3
• /
• pp.172-178
• /
• 2001

K-Ar dating system of Korea Basic Science Institute (KBSI) was installed in 1997 and has been used since then. The system consists of high temperature graphite furnace, gas purification system, and mass spectrometer with data acquisition system. K-Ar age is determined by the measurement of the concentrations of Ar and K through isotope dilution method using $^{38}Ar$ as spike and flame spectroscopy, respectively. The accuracy and reliability for the K-Ar age are checked using the several K-Ar standard materials. Although the exact age determination for young samples of less than 1 Ma is hampered by small fluctuations of sensitivity and mass discrimination, the present system yields the reliable K-Ar age compared to the standard materials of Tertiary and Mesozoic age. The measurements for the SORI93 biotite with the recommended K-Ar age of $92.6\pm$0.6 Ma and Bern4M muscovite of $18.5\pm$0.6 Ma yield the reliable age of $92.1\pm$1.1 Ma and $17.8\pm$0.2 Ma, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.1074-1077
• /
• 2003

우리는 AC-PDP에서 휘도와 효율을 향상시키기 위하여 Ne-Xe(4%)와 He(7)-Ne(3)-Xe(3%)에 소량의 Ar 또는 Kr를 첨가하여 최적의 페닝 방전가스 혼합비를 연구하였다. 우리는 이것을 증명하기 위해 효율과 Q-V 방법을 이용하여 벽전하를 계산하였으며, 2차원 시뮬레이션에서의 결과값과 비교하였다. 200 Torr 압력에서 He-Ne-Xe 또는 Ne-Xe에 소량의 Ar(0.01-0.1%) 또는 Kr(0.01-0.1%)을 첨가시켰을 때, 우리는 20% 이상의 휘도의 증가와 25% 이상의 효율 증가를 발견하였고, 또한 벽전하도 25% 이상의 증가를 보였다. 400 Torr 압력에서 He-Ne-Xe-Kr(0.005%)에 소량의 Ar(0.005-0.1%)를 첨가시켰을 때는 8% 이상의 휘도의 증가와 18% 이상의 효율 증가, 12% 이상의 벽전하 증가를 확인하였다. 결론적으로 이 결과는 He, Ne, Ar, Kr 사이에 추가적인 페닝효과가 휘도와 효율을 향상시켰다는 것을 보여준다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.10
• /
• pp.846-851
• /
• 2007

In this work, the etching characteristics of $Ge_2Sb_2Te_5(GST)$ thin films were investigated using an inductively coupled plasma (ICP) of $Cl_2/Ar$ gas mixture. To analyze the etching mechanism, an optical emission spectroscopy (OES) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out. The etch rate of the GST films decreased with decreasing Ar fraction. At the same time, high selective etch rate over $SiO_2$ films was obtained and the selectivity over photoresist films decreased with increasing the he fraction. From XPS results, we found that Te halides were formed at the etching surface and Te halides limited the etch rate of the GST films.