• Title/Summary/Keyword: Ar Gas

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Multi-component $ZnO-In_2O_3-SnO_2$ thin films deposited by RF magnetron co-sputtering

  • Lee, Byoung-Hoon;Hur, Jae-Sung;Back, Sang-Yul;Lee, Jeong-Seop;Song, Jung-Bin;Son, Chang-Sik;Choi, In-Hoon
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2006.10a
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    • pp.68-71
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    • 2006
  • Multi-component $ZnO-In_2O_3-SnO_2$ thin films have been prepared by RF magnetron co-sputtering using targets composed of $In_3Sn_4O_{12}$(99.99%) [1] and ZnO(99.99%) at room temperature. $In_3Sn_4O_{12}$ contains less In than commercial ITO, so that it lowers cost. Working pressure was held at 3 mtorr flowing Ar gas 20 sccm and sputtering time was 30 min. RF power ratio [RF1 / (RFI + RF2)] of two guns in sputtering system was varied from 0 to 1. Each RF power was varied $0{\sim}100W$ respectively. The thickness of the films was $350{\sim}650nm$. The composit ion concentrations of the each film were measured with EPMA, AES and XPS. The low resistivity of $1-2\;{\times}\;10^3$ and an average transmittance above 80% in the visible range were attained for the films over a range of ${\delta}\;(0.3\;{\leq}\;{\delta}\;{\leq}\;0.5)$. The films also showed a high chemical stability with time and a good uniformity.

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Study on the Performance of Laser Welded joint of Aluminum alloys for Car Body

  • Kutsuna, Muneharu;Kitamura, Shuhei;Shibata, Kimihiro;Salamoto, Hiroki;Tsushima, Kenji
    • Proceedings of the KWS Conference
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    • 2002.10a
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    • pp.620-625
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    • 2002
  • Considering the fuel consumption of car, a light structure of aluminum alloys is desired for car body nowadays. However, fusion welding of aluminum alloys has some problems of reduction of joint efficiency, porosity formation and hot cracking. ill the present work, investigation to improve the joint performance of laser welded joint has been carried out by addition of Cu, Ni, and Zr to A6N01 alloy welds. Aluminum alloy plate of 2.0mm in thickness with filler metal bar was welded by twin beam Nd:YAG laser facility (total power:5kW). The filler metals were prepared by changing the chemical compositions for adding the elements into the weld metal. Thirteen filler metal bars were prepared and pre-placed into the base metal before welding. Ar gas shielding with a flow rate of 10 l/min was used. The defocusing distance is kept at 0 mm. At travel speeds of 3 to 9 m/min and at laser power of 5kW (front beam 2kW rear beam 3kW), full penetration welds were obtained, whereas at travel speeds of 12 to 18 m/min and same power, partial penetration was observed. The joint efficiency of laser-welded joint was improved by the addition of Cu, Ni, and Zr due to the solid solution hardening, grain refining and precipitation hardening. The type of hardening has been further considered by metallurgical examination.

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Nonstoichiometric Effects in the Leakage Current and Electrical Properties of Bismuth Ferrite Ceramics

  • Woo, Jeong Wook;Baek, SeungBong;Song, Tae Kwon;Lee, Myang Hwan;Rahman, Jamil Ur;Kim, Won-Jeong;Sung, Yeon Soo;Kim, Myong-Ho;Lee, Soonil
    • Journal of the Korean Ceramic Society
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    • v.54 no.4
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    • pp.323-330
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    • 2017
  • To understand the defect chemistry of multiferroic $BiFeO_3-based$ systems, we synthesized nonstoichiometric $Bi_{1+x}FeO_{3{\pm}{\delta}}$ ceramics by conventional solid-state reaction method and studied their structural, dielectric and high-temperature charge transport properties. Incorporation of an excess amount of $Bi_2O_3$ lowered the Bi deficiency in $BiFeO_3$. Polarization versus electric field (P-E) hysteresis loop and dielectric properties were found to be improved by the $Bi_2O_3$ addition. To better understand the defect effects on the multiferroic properties, the high temperature equilibrium electrical conductivity was measured under various oxygen partial pressures ($pO_2{^{\prime}}s$). The charge transport behavior was also examined through thermopower measurement. It was found that the oxygen vacancies contribute to high ionic conduction, showing $pO_2$ independency, and the electronic carrier is electron (n-type) in air and Ar gas atmospheres.

Characteristic evaluations and production of triode magnetron sputtering system (Triode magnetron sputtering system의 제작 및 특성평가)

  • Kim, H.H.;Lee, M.Y.;Kim, K.T.;Yoon, S.H.;Yoo, H.K.;Kim, J.M.;Park, C.H.;Lim, K.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.787-790
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    • 2003
  • A rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of $E{\times}B$ field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

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Change in the Energy Band Gap and Transmittance IGZO, ZnO, AZO OMO Structure According to Ag Thickness (IGZO, ZnO, AZO OMO 구조의 Ag두께 변화에 따른 투과율과 에너지 밴드 갭의 변화)

  • Lee, Seung-Min;Kim, Hong-Bae;Lee, Sang-Yeol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.3
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    • pp.185-190
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    • 2015
  • In this study, we fabricated the indium gallium zinc oxide (IGZO), zinc oxide (ZnO), aluminum zinc oxide (AZO). oxide and silver are deposited by magnetron sputtering and thermal evaporator, respectively transparency and energy bandgap were changed by the thickness of silver layer. To fabricate metal oxide metal (OMO) structure, IGZO sputtered on a corning 1,737 glass substrate was used as bottom oxide material and then silver was evaporated on the IGZO layer, finally IGZO was sputtered on the silver layer we get the final OMO structure. The radio-frequency power of the target was fixed at 30 W. The chamber pressure was set to $6.0{\times}10^{-3}$ Torr, and the gas ratio of Ar was fixed at 25 sccm. The silver thickness are varied from 3 to 15 nm. The OMO thin films was analyzed using XRD. XRD shows broad peak which clearly indicates amorphous phase. ZnO, AZO, OMO show the peak [002] direction at $34^{\circ}$. This indicate that ZnO, AZO OMO structure show the crystalline peak. Average transmittance of visible region was over 75%, while that of infrared region was under 20%. Energy band gap of OMO layer was increased with increasing thickness of Ag layer. As a result total transmittance was decreased.

Fabrication and Characteristics of Photoconductive Amorphous Silicon Film for Facsimile (팩시밀리용 비정질 실리콘 광도전막의 제작 및 특성)

  • Kim, Jeong-Seob;Oh, Sang-Kwang;Kim, Ki-Wan;Lee, Wu-Il
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.6
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    • pp.48-56
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    • 1989
  • Contact-type linear image sensors for facsimile have been fabricated by means of rf glow discharge decomposition method of silane. The dependence of their electrical and optical properties on rf power, $SiH_4$ flow rate, ambient gas pressure, $H_2SiH_4$ ratio and substrate temperature are described. The a-Si:H monolayer demonstriated photosensitivity of 0.85 and $I_{ph}/I_d$ ratio of 100 unger 100 lux illumination. However, this monolayer has relatively high dark current due to carrier injection from both electrodes, resulting in low $I_{ph}/I_{dd}$ ratio. To suppress the dark current we have fabricated $SiO_2/i-a-Si:H/p-a-Si:H:B$ multilayer film with blocking structure. The photocurrent of this multilayer sensor with 6 V bias became saturated ar about 20nA under 10 lux illumination, while the dark current was less than 0.2 nA. Moreover, the spectral sensitivity of the multilayer film was enhanced for short wavelength visible region, compared with that of the a-Si:H monolayer. These results show that the fabricated photocon-ductive film can be used as the linear image sensor of the facsimile.

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Possible Changes of East Asian Summer Monsoon by Time Slice Experiment (Time Slice 실험으로 모의한 동아시아 여름몬순의 변화)

  • Moon, JaYeon;Kim, Moon-Hyun;Choi, Da-Hee;Boo, Kyung-On;Kwon, Won-Tae
    • Atmosphere
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    • v.18 no.1
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    • pp.55-70
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    • 2008
  • The global time slice approach is a transient experiment using high resolution atmosphere-only model with boundary condition from the low resolution globally coupled ocean-atmosphere model. The present study employs this "time slice concept" using ECHAM4 atmosphere-only model at a horizontal resolution of T106 with the lower boundary forcing obtained from a lower-resolution (T42) greenhouse gas + aerosol forcing experiment performed using the ECHO-G/S (ECHAM4/HOPE-G) coupled model. In order to assess the impact of horizontal resolution on simulated East Asian summer monsoon climate, the differences in climate response between the time slice experiments of the present and that of IPCC SRES AR4 participating 21 models including coarser (T30) coupled model are compared. The higher resolution model from time slice experiment in the present climate show successful performance in simulating the northward migration and the location of the maximum rainfall during the rainy season over East Asia, although its rainfall amount was somewhat weak compared to the observation. Based on the present climate simulation, the possible change of East Asian summer monsoon rainfall in the future climate by the IPCC SRES A1B scenario, tends to be increased especially over the eastern part of Japan during July and September. The increase of the precipitation over this region seems to be related with the weakening of northwestern part of North Pacific High and the formation of anticyclonic flow over the south of Yangtze River in the future climate.

Fabrication of Silicon Window for Low-price Thermal Imaging System (저가형 열영상 시스템을 위한 실리콘 윈도우 제작)

  • Sung, Byung Mok;Jung, Dong Geon;Bang, Soon Jae;Baek, Sun Min;Kong, Seong Ho
    • Journal of Sensor Science and Technology
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    • v.24 no.4
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    • pp.264-269
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    • 2015
  • An infrared (IR) bolometer measures the change of resistance by absorbing incident IR radiation and generates a signal as a function of the radiation intensity. Since a bolometer requires temperature stabilization and light filtering except for the infrared rays, it is essential for the device to be packaged meeting conditions that above mentioned. Minimization of heat loss is needed in order to stabilize temperature of bolometer. Heat loss by conduction or convection requires a medium, so the heat loss will be minimized if the medium is a vacuum. Therefore, vacuum packaging for bolometer is necessary. Another important element in bolometer packaging is germanium (Ge) window, which transmits IR radiation to heat the bolometer. To ensure a complete transmittance of IR light, anti-reflection (AR) coatings are deposited on both sides of the window. Although the transmittance of Ge window is high for IR rays, it is difficult to use frequently in low-price IR bolometer because of its high price. In this paper, we fabricated IR window by utilizing silicon (Si) substrate instead of Ge in order to reduce the cost of bolometer packaging. To enhance the IR transmittance through Si substrate, it is textured using Reactive Ion Etching (RIE). The texturing process of Si substrate is performed along with the change of experimental conditions such as gas ratio, pressure, etching time and RF power.

A Study on Feasibility of the Phosphoric Paste Doping for Solar Cell using Newly Atmospheric Pressure Plasma Source (새로운 대기압 플라즈마 소스를 이용한 결정질 실리콘 태양전지 인(P) 페이스트 도핑에 관한 연구)

  • Cho, I-Hyun;Yun, Myoung-Soo;Jo, Tae-Hoon;Rho, Junh-Young;Jeon, BuII;Kim, In-Tae;Choi, Eun-Ha;Cho, Guang-Sup;Kwon, Gi-Chung
    • New & Renewable Energy
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    • v.9 no.2
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    • pp.23-29
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    • 2013
  • Furnace and laser is currently the most important doping process. However furnace is typically difficult appling for selective emitters. Laser requires an expensive equipment and induces a structural damage due to high temperature using laser. This study has developed a new atmospheric pressure plasma source and research atmospheric pressure plasma doping. Atmospheric pressure plasma source injected Ar gas is applied a low frequency (a few 10 kHz) and discharged the plasma. We used P type silicon wafers of solar cell. We set the doping parameter that plasma treatment time was 6s and 30s, and the current of making the plasma is 70 mA and 120 mA. As result of experiment, prolonged plasma process time and highly plasma current occur deeper doping depth and improve sheet resistance. We investigated doping profile of phosphorus paste by SIMS (Secondary Ion Mass Spectroscopy) and obtained the sheet resistance using generally formula. Additionally, grasped the wafer surface image with SEM (Scanning Electron Microscopy) to investigate surface damage of doped wafer. Therefore we confirm the possibility making the selective emitter of solar cell applied atmospheric pressure plasma doping with phosphorus paste.

Characteristics of Welds of Pure Titanium Plate Using Ultrasonic Attenuation (초음파 감쇠를 이용한 순 티타늄 판재의 용접부 특성)

  • Seon, Sang-Won;Yi, Won;Park, Hee-Dong;Hwang, Yeong-Tak
    • Journal of the Korean Society for Nondestructive Testing
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    • v.33 no.2
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    • pp.205-211
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    • 2013
  • This paper studies on mechanical properties, fractures, and ultrasonic characteristics of Pure Titanium welds using ultrasonic attenuation. Ti specimen was made by using AR purge gas. When the titanium weld specimen is fractured, Tensile tests were conducted in order to observe the ultrasonic signal changes. A scanning electron microscope(SEM) was used to observe changes in failure surface and an ultrasonic normal probe with the central frequency of 4 MHz was used to obtain ultrasonic signals. As a result, the value of the mechanical properties in the weld zone was lower than that in the base zone and heat affected zone(HAZ) from Ti. Also the grain size in the weld zone was bigger than that in the weld zone and HAZ from Ti. Ultrasonic signals using a RMS method presents correlation between envelope area and the tensile strength. Consequently, the ultrasonic method could be potential tool for integrity evaluation of the Ti weld zone.