• Journal of the Korean institute of surface engineering
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• v.34 no.2
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• pp.97-104
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• 2001

($Ti_{ 1-x}$$Al_{ x}$)N has been deposited on high speed steel (HSS) substrate using PECVD from the gas mixture of $TiC1_4$, $AlC1_4$, $NH_3$, $H_2$, and Ar. The correlation between the microstructure and the mechanical properties was investigated. ($Ti_{1-x}$$Al_{ x}$)N showed single phase NaCl-structure up to X=0.87, while a mixed phase of NaCl Type (Ti, Al) N and wurtzite structure AlN was observed for 0.87$Ti_{1-x}$ $Al_{x}$ )N became by degrees as increasing X, which made the hardness of the coating higher by Al addition. When the coating was composed of a mixed phase, however, the hardness decreased abruptly due to the effect of soft AlN phase. The wear volume of the coatings could be obtained as the concentration of the coating was varied, and the relation between the wear volume and hardness or the adhesion strength was discussed.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.123-132
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• 2000

Cerium substituted YIG thin films were grown by rf magnetron sputter techniques. We investigated the effects of post-deposition heat-treatment as well as various deposition parameters such as substrate materials, substrate temperature. sputter power, and sputter gas types on the crystallinity, chemical composition, microstructure and magnetic characteristics of the films. Post-deposition heat treatment over 750 $\^{C}$ was applied to crystallize as-prepared amorphous films, and a strong tendency of particular crystallographic planes tying parallel to substrate surface was observed for the post-deposition heat-treated films on GGG substrate. The chemical composition of the films exhibited a wide range of chemical stoichiometry depending on the oxygen fraction of sputter gas, and in particular the composition of the film deposited in sputter gas with an oxygen fraction of R = 10% was Ce$\_$0.23/Y$\_$1.30/Fe$\_$3.50/O$\_$12/. With raising the temperature of post-deposition heat-treatment from 900 $\^{C}$ to 1100 $\^{C}$, the surface roughness of the film on GGG substrates increased from about 3 nm to 40 nm, but their coercive force and ferromagnetic resonance line width decreased from 0.477 kA/m to 0.369 kA/m and from 12.5 kA/m to 8.36 kA/m, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.40 no.12
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• pp.1047-1053
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• 2016

In this study, welding of pure titanium was carried out by using a continuous wave fiber laser with a maximum output of 6.3 kW. Because brittle regions form easily in titanium as a result of oxidation or nitriding, the weld must be protected from the atmosphere by using an appropriate shielding gas. Experiments were performed by changing the type and the flow rate of shielding gases to obtain the optimal shielding condition, and the weldability was then evaluated. The degree of oxidation and nitriding was distinguished by observing the color of beads, and weld microstructure was observed by using an optical microscope and a scanning electron microscope. The mechanical properties of the weld were examined by measuring hardness. When the weld was oxidized or nitrified, the bead color was gray or yellow, and the oxygen or nitrogen content in the bead surface and overall weld tended to be high, as a result of which the hardness of the weld was thrice that of the base metal. A sound silvery white bead was obtained by using Ar as the shielding gas.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.6
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• pp.590-598
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• 2005

An adequate method to identify chromium separation, Cr(III) and Cr(VI), in water samples were studied by using High Performance Liquid Chromatography(HPLC) coupled with Inductively Coupled Plasma Mass Spectometer(ICP-MS) equipped with Dynamic Reaction Cell(DRC). The characteristic distribution of Cr(III) and Cr(VI) in the raw water taken at the six water intake stations in Seoul, was analyzed by the method developed by the authors. The chromium species separated by HPLC was isocratically conducted by using tetrabutylammonium phosphate monobasic(1.0 mM TBAP), ethylenediaminetetraacetic acid(0.6 mM EDTA) and 2% v/v methanol as the mobile phase. 5% v/v methanol was used as flushing solvent. A reactive ammonia($NH_3$) gas was used to eliminate the potential interference of $ArC^+$. Several Parameters such as solvent ratio, pH, flow rate and sample injection volume were optimized for the successful separation and reproducibility. Although it has been reported thai the separation sensitivity of Cr(III) is superior to that of Cr(VI), the authors observed Cr(VI) was more sensitive than Cr(III) when ammonia($NH_3$) gas was used as the reaction gas. It took less than 3 minutes to analyze chromium species with this method and the estimated detection limits were $0.061\;{\mu}g/L$ for Cr(III) and $0.052\;{\mu}g/L$, for Cr(VI). According to the results from the analysis on chromium species in the raw water of the six intake stations, the concentrations of Cr(III) ranged from 0.048 to $0.064\;{\mu}g/L$(ave. $0.054\;{\mu}g/L$) while that of Cr(VI) ranged from 0.014 to $0.023\;{\mu}g/L$(ave. $0.019\;{\mu}g/L$). Recovery ratio was very high($90.1{\sim}94.1%$). There were two or three times more Cr(III) than Cr(VI) in the raw water.

• The Journal of the Acoustical Society of Korea
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• v.39 no.6
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• pp.568-575
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• 2020

Ultrasound has been widely used in various industrial fields. One of challenging application areas is cooling microelectronics. Ultrasonic cooling systems can work with air, argon (Ar) and nitrogen (N₂) instead of conventional refrigerant such as freon gas, which can cause global warming. Furthermore, ultrasonic systems do not have moving parts, thus high durability can be obtained. So it is necessary to develop ultrasonic cooling systems due to environmental issues and durability points. In this paper, the design and fabrication processes are explained. When designing the system, a feasibility test was performed with a prototype cooler. Based on the result, finite element analysis with ANSYS software was performed. The predicted anti-resonance frequency for a piezoelectric actuator was 34.8 kHz, which was in good agreement with the experimental result of 34.6 kHz with 0.6% error. In addition, the predicted anti-resonance frequency for the ultrasonic waveguide was 39.4 kHz, which also agreed well with the experimental value of 39.8 kHz with 1.0% error. Based on these results, the developed ultrasonic waveguide might be applicable in microchip cooling.

• Journal of the Korean Electrochemical Society
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• v.4 no.4
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• pp.172-175
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• 2001

Nanophase catalyst layer for direct methanol fuel cell has been fabricated by magnetron sputtering method. Catalyst metal targets and carbon were sputtered simultaneously on the Nafion membrane surface at abnormally higher gas (Ar/He mixture) pressure than that of normal thin film processing. They could be coated as a novel structure of catalyst layer containing porous PtRu or Pt and carbon particles both in nanometer range. Membrane electrode assembly made with this layer led to a reduction of the catalyst loading. At the catalyst loading of 1.5mg $PtRu/cm^2$ for anode and 1mg $Pt/cm^2$ for cathode, it could provide $45 mW/cm^2$ in the operation at 2 M methanol, 1 Bar Air at 80"C. It is more than $30\%$ increase of the power density performance at the same level of catalyst loading by conventional method. This was realized due to the ultra fine particle sizes and a large fraction of the atoms lie on the grain boundaries of nanophase catalyst layer and they played an important role of fast catalyst reaction kinetics and more efficient fuel path. Commercialization of direct methanol fuel cell for portable electronic devices is anticipated by the further development of such design.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2004.06a
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• pp.285-291
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• 2004

As a part of assessment of the structural material for the molten salt handling system, corrosion behavior of Inconel 718, X-750, Haynes 75 and Haynes 263 alloys in the molten salt of LiCl-Li$_2$O-O$_2$was investigated in the range of temperature; $650^{\circ}C$, time; 24~168h, $Li_2O$; 3wt%, mixed gas; Ar~10%$O_2$. In the molten salt of LiCl-$Li_2O-O_2$, the order corrosion rate was Haynes 263 ＜ Haynes 75 ＜ Inconel X-750 ＜ Inconel 718. Haynes 263 alloy showed the highest corrosion resistance among the examined alloys. Corrosion products of alloys were as fellows: Haynes 75: $Cr_2O_4$, $NiFe_2O_4$, $LiNiO_2$, $Li_2NiFe_2O_4$, Inconel 718; $Cr_2O_4$, $NiFe_2O_4$, Haynes 263; $Li(Ni,Co)O_2$, $NiCr_2O_4$, $LiTiO_2$, Inconel X-750; $Cr_2O_3$, $NiFe_2O_4$,$FeNi_3$, (Al,Nb,Ti)$O_2$. Haynes 263 showed local corrosion behavior and Haynes 75, Inconel 718 and Inconel X-750 showed uniform corrosion behavior.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.928-934
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• 2002

Gallium doped Zinc Oxide(GZO) films were deposited by dc magnetron sputtering using a GZO ceramic target at various conditions such as substrate temperature (RT, 400), residual water pressure ($P_{H_2O}$; 1.61${\times}10^{-4}∼2.2{\times}10^{-3}$ Pa), introduction of $H_2$ gas (8.5%) and different magnetic field strengths(250, 1000G). GZO films deposited without substrate heating showed clear degradation in film crystallinity and electrical properties with increasing $P_{H_2O}$. The resistivity increased from 3.0${\times}10^{-3}$ to 3.1${\times}10^{-2}{\Omega}㎝$ and the grain size of the films decreased from 24 to 3 nm when PH2O was increased from 1.61${\times}10^{-4}$ to 2.2${\times}10^{-3}$ Pa. However, degradation in electrical properties with increasing $P_{H_2O}$ was not observed for the films deposited with introduction of 8.5% $H_2$. When magnetic field strength of the cathode increased from 250G to 1000G, crystallinity and electrical properties of GZO films improved remarkably about all the $P_{H_2O}$. This result could be attributed to the decrease in film damage caused by the decrease in plasma impedance.

• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.245-250
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• 2005

ZnO was deposited on sapphire single crystal substrate by an ultrasonic pyrolysis of Zinc Acetate Dehydrate (ZAH) with carrying Ar gas. Through Thermogravimetry-Differential Scanning Calorimetry(TG-DSC), zinc acetate dihydrate was identified to be dissolved into ZnO above $380^{\circ}C$. ZnO deposited at $380-700^{\circ}C$ showed polycrystalline structures with ZnO (101) and ZnO (002) diffraction peaks like bulk ZnO in XRD, and from which c-axis strain ${\Sigma}Z=0.2\%$ and compressive biaxial stress$\sigma=-0.907\;GPa$ was obtained for the ZnO deposited $400^{\circ}C$. Scanning electron microscope revealed that microstructures of the ZnO were dependent on the deposition temperature. ZnO grown below temperature $600^{\circ}C$ were aggregate consisting of zinc acetate and ZnO particles shaped with nanoblades. On the other hand the grain of the ZnO deposited at $700^{\circ}C$ showed a distorted hexagonal shape and was composed of many ultrafine ZnO powers of 10-25 nm in size. The formation of these ulrafine nm scale ZnO powers was explained by the model of random nucleation mechanism. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement.