• 한국세라믹학회지
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• 제37권7호
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• pp.645-650
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• 2000

Effects of the chemical composition and sintering atmosphere on the formation of reaction phases and physical properties of reactive hot-pressed TiB2-AlN-BN composites were investigated. At N2 atmosphere, TiN was formed by the reaction between Ti and N2, which inhibited the densification and results in inferior mechanical-and electrical properties of the composites. However, at Ar atmosphere, enhanced densification and physical properties of composites were obtained due to that the TiN formation reaction was excluded. Densification of the composites was also hindered by BN, therefore, inferior mechanical-and electrical properties of composites were obtained with amount of BN in the starting materials. At Ar atmosphere, TiB2-AlN-BN composites having 318 MPa of flexural strength, 3.5 MPa.m1/2 of fracture toughness and 276$\mu$Ω.cm of electrical resistivity were fabricated from mole ratio 1:2:1.6 of Ti-Al-BN mixtures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.67-70
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• 2013

In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.570-573
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• 2001

In this paper, GaN films have been grown on SiO$_2$/Si(100) substrates by RF magnetron sputtering. To obtain high quality GaN films, we used ZnO buffer layer and modified the process conditions. The charateristics of GaN films on RF power, substrate temperature and Ar/N$_2$gas ratio have been investigated by Auger electron spectroscopy and X-ray diffraction analysis. At RF power 150W, substrate temperature 500 $^{\circ}C$ and Ar/N$_2$=1:2 gas ratio, we could grow high quality GaN films. Through the atomic force microscope and photoluminescence analysises, it was observed that the crystallization of GaN films was improved with increasing annealing temperature and the optimal crystallization of GaN films was found at 1100 $^{\circ}C$ annealing temperature.

• 한국광학회지
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• 제13권4호
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• pp.332-335
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• 2002

가류고무의 접착력을 향상시키기 위해서 엑시머 펄스 레이저 광으로 표면처리를 하였다. 레이저 광 조사 수의 증가에 따라, 접착력은 크게 향상되어, 100회의 조사 수에서 1500 N/m의 가장 큰 값을 얻었다. 또한 에너지 밀도 증가에 대해서도 접착력은 증가하여 에너지 밀도 176 mJ/$cm^{2}$에서 가장 큰 접착력 1500 N/m를 얻게 되었다. 에너지 밀도의 증가에 따라 접착력이 증가하는 것은 표면적의 증가와 관련이 있음을 알았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.514-514
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• 2012

면방전 구조의 대가압 DBD플라즈마 소스를 제작하여 Ar과 N2 기체를 유입하여 미생물인 Fungi의 변화를 관찰하였다. 면방전 구조의 DBD플라즈마 소스는 유리기판위에 포토리소그라피 공정으로 미소전극을 형성하여 고밀도의 방전셀을 형성하였다. 방전시 발생하는 열에 의한 효과의 제어를 위하여 냉각장치를 장착하였다. 또한 유리기판과 포토리소그라피 공정은 방전영역에 제한없이 다양한 크기의 소스제작이 가능하다. 셀 피치가 $400{\mu}m$이며 $cm^2$ 당 200여개의 방전 셀로 구성되어 있어서 기존 메쉬타입의 DBD플라즈마 장치에 비해 균일하게 플라즈마를 조사할 수 있으며 플라즈마 제트 장치에 비해서는 넓은 면적을 동시에 조사할 수 있게 되었다. Ar 과 N2기체를 3 L/min의 유량으로 방전공간에 유입하면서 1 kV의 구동전압으로 플라즈마를 발생하였다. 이 경우 플라즈마의 조사시간을 20 s, 40 s, 60 s 간격으로 변화를 주며 Fungi의 변화를 관찰하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1179-1182
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• 2004

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients in $CF_4+Ar$ gas mixture by using two-term approximation of Boltzmann equation. but there is difference between the result of the two-term and the multi-term approximation of the Boltzmann equation in $CF_4$ gas. Therefore, in this paper, we calculated the electron drift velocity (W) in $CF_4+Ar$ gas mixture for range of E/N values from $0.01\sim500[Td}$ at the temperature was 300[K] and pressure was 1[Torr] by multi-term approximation of the Boltzmann equation by Robson and Ness. The results of two-term and multi-term approximation of the Boltzmann equation has been compared with each other for a range of E/N.

• 대한금속재료학회지
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• 제46권3호
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• pp.125-130
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• 2008

Conventional plasma carburizing or nitriding for austenitic stainless steels results in a degradation of corrosion resistance. However, a low temperature plasma surface treatment can improve surface hardness without deteriorating the corrosion resistance. The 2-step low temperature plasma processes (the combined carburizing and post nitriding) offers the increase of both surface hardness and thickness of hardened layer and corrosion resistance than the individually processed low temperature nitriding and low temperature carburizing techniques. In the present paper, attempts have been made to investigate the influence of the introduction of Ar gas (0~20%) in nitriding atmosphere during low temperature plasma nitriding at $370^{\circ}C$ after low temperature plasma carburizing at $470^{\circ}C$. All treated specimens exhibited the increase of the surface hardness with increasing Ar level in the atmosphere and the surface hardness value reached up to 1050 HV0.1, greater than 750 $HV_{0.1}$ in the carburized state. The expanded austenite phase (${\gamma}_N$) was observed on the most of the treated surfaces. The thickness of the ${\gamma}_N$ layer reached about $7{\mu}m$ for the specimen treated in the nitriding atmosphere containing 20% Ar. In case of 10% Ar containing atmosphere, the corrosion resistance was significantly enhanced than untreated austenitic stainless steels, whilst 20% Ar level in the atmosphere caused to form CrN in the N-enriched layer (${\gamma}_N$), which led to the degradation of corrosion resistance compared with untreated austenitic stainless steels.

• 전기학회논문지P
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• 제59권2호
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• pp.146-150
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• 2010

Distribution Function and Drift velocities for electrons in $SF_6$-Ar mixtures gases used by MCS-BEq algorithm has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight method. The results obtained in this work will provide valuable information on the fundamental behaviors of electrons in weakly ionized gases and the role of electron attachment in the choice of better gases and unitary gas dielectrics or electro negative components in dielectric gas mixtures. The results show that the deduced electron drift velocities agree reasonably well with theoretical for a rang of E/N values.

• 소성∙가공
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• 제13권1호
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• pp.72-77
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• 2004

An Fe-25Cr steel was oxidized in Ar atmosphere at 973K with and without applying external stress of 30∼35 MPa. A 0.1$\mu\textrm{m}$ thick $Cr_2O_3$ scales formed during pre-treatment in Ar atmosphere. Initiation of cracking on the oxide scales took place at grain boundaries during the end of second creep stage, in which cracks were found nearly perpendicular to the tensile directions. On the contrary, a scale developed in $N_2$-0.1%$SO_2$ displaced a poor adherence on the metal substrate. In this sample, a fast grown of scales was observed during creep deformation, and the strength of materials was much lower than in Ar. The creep strain rate of $1.5{\times}10^{-7}/s$ and $5.8{\times}10^{-7}/s$ was determined in Ar and in $N_2$-0.1%$SO_2$ under 30MPa, respectively.