• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.202-203
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• 2009

Plasma etching was studied to obtain high-efficiency Si solar cells. SiN nanoparticles were observed upon the plasma treatment using SF6 gas. The mechanism of the nanoparticles formation has been studied. A net increase in the current density (Jsc) of the cells of $1.7mA/cm^2$ and in the conversion efficiency ($\eta$) of 2.1% is obtained after the plasma treatment for 10s, thanks to the significant decrease of reflection in the shorter wavelength range.

• Korean Journal of Optics and Photonics
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• v.9 no.5
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• pp.300-306
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• 1998

We have studied the optical effects in dielectric multilayer due to the interdiffusion formed during the deposition process. We suggest a numerical method to calculate the optical properties of periodical multilayer thin-films with gradient-index profiles. Using this method the spectral transmittance and reflectance were obtained for Fabry-Perot type filters, broad-band total reflectors and antireflection filters with interdiffusion layers. Interdiffusion reduced the spectral band width of high reflectance in total reflectors, and deteriorated the characteristics of multilayer AR-coatings leading to a large variation of reflectance if the number of the layers is large.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.300-300
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• 2011

Si oxidation is a key process in developing silicon devices, such as highly integrated metal-oxide-semiconductor (MOS) transistors and antireflection-coating (ARC) on solar cell substrate. Many experimental and theoritical studies have been carried out for elucidating oxidation processes and adsorption structure using ab initio total energy and electronic structure calcultaions. However, the initial oxidation processes at step edge on vicinal Si surface have not been studied using the ReaxFF reactive force field. In this work, strucutural change, charge distribution of oxidized Si throughout the depth from Si surface were observed during oxidation processes on vicinal Si(001) surface inclined by $10.5^{\circ}$ of miscut angle toward [100]. Adsorption energys of step edge and flat terrace were calculated to compare the oxidation reaction at step edge and flat terrace on Si surface.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.2-110.2
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• 2012

We reported on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for all-transparent ZTO channel based thin film transistors (TFTs). The ZTO/Ag bilayer is more transparent (83.71%) and effective source/drain (S/D) electrodes for the ZTO channel/Al2O3 gate dielectric/ITO gate electrode/glass structure than ZTO/Ag/ZTO trilayer because the bottom ZTO layer in the trilayer increasea contact resistance between S/D electrodes and ZTO channel layer and reduce the antireflection effect. The ZTO based all-transparent TFTs with ZTO/Ag bilayer S/D electrode showed a saturation mobility of 4.54cm2/Vs and switching property (1.31V/decade) comparable to TTFT with Ag S/D electrodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.380-380
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• 2011

ZnO nanorod (NR) arrays prepared via simple ammonia hydrothermal method exhibiting superhydrophilicity, high transmittance and antireflection. These properties result from the unique surface structure and material property of ZnO NR arrays. Highly rough surface due to ZnO NRs enhanced hydrophobicity/hydrophilicity of the films and short NRs (about 300 nm) made ZnO arrays transparent. ZnO NR films were chemically modified by dipping the sample into 5mM stearic acid/ethanol solution for 3 hours. Then the ZnO NRs became superhydrophobic surfaces, whose contact angle reached 159.2$^{\circ}$ maintaining their high transmittance. These biomimetic ZnO NR arrays can be used in diverse field, such as antifogging/self-cleaning surfaces and optical devices.

• ETRI Journal
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• v.31 no.6
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• pp.675-679
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• 2009

$Ti_xSi_{1-x}O_y$ (TSO) thin films are fabricated using plasma-enhanced atomic layer deposition. The Ti content in the TSO films is controlled by adjusting the sub-cycle ratio of $TiO_2$ and $SiO_2$. The refractive indices of $SiO_2$ and $TiO_2$ are 1.4 and 2.4, respectively. Hence, tailoring of the refractivity indices from 1.4 to 2.4 is feasible. The controllability of the refractive index and film thickness enables application of an antireflection coating layer to TSO films for use as a thin film solar cell. The TSO coating layer on an Si wafer dramatically reduces reflectivity compared to a bare Si wafer. In the measurement of the current-voltage characteristics, a nonlinear coefficient of 13.6 is obtained in the TSO films.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.4
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• pp.187-191
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• 2004

In this work, we used the PCID simulator for simulation of solar cell and examined the effect of front-back surface recombination velocity, minority carrier diffusion length, junction depth and emitter sheet-resistance. As the effect of base thickness, the efficiency decreased by the increase in series resistance with the increase of the thickness and found decrease in efficiency by decrease of the current as the effect of the recombination. Also, as the effect of base resistivity, the efficiency increased somewhat with the decrease in resistivity, but when the resistivity exceeded certain value, the efficiency decreased as a increase in the recombination ratio. The optimum efficiency was obtained at the resistivity 0.5 $\Omega$-cm, and thickness $100\mu\textrm{m}$. We have successfully achieved 10.8% and 13.7% efficiency large area($103mm{\times}103mm$) mono-crystalline silicon solar cells without and with PECVD silicon nitride antireflection coating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.123-126
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• 1994

We discussed the thermal analysis for recording media with the variation of the laser pulse duration and the power and the temperature distribution for the optimized Te-based antireflection structure by using the computer calculations. If the radial diffusion of heat is negligible, we can calculate the maximum temperature at the spot center in recording layer by Simple Method, and the temperature profile considering the specific heat and the latent heat by Numerical Method. As a result, the effect of the heat sinking which acted as a loss for the hole formation can be minimized by introducing the pulse of the hole formation duration( $\tau$ ) shorter than the thermal time constant( $\tau$$\sub$D/) of dielectric layer. This requirments can be satisfied as using the dielectric thickness of the 7nd ART condition or the dielectric materials with low thermal diffusivity.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.220-224
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• 1994

In this study, we discussed the optical property to find the optimal condition of Te-based antireflection trilayer(ART) structure for a high density optical recording. It was found that the optical property was improved by suggesting the environmental parameters satisfied the optimum condition. As the results, the optimized(.lambda.=8.000${\AA}$.) thickness of the recording layer is 27${\AA}$, and the 1st and 2nd minimum ART conditions of dielectric layers are 1080${\AA}$, 3820${\AA}$, respectively. And the high SNR, the contrast ratio and the sensitivity are achieved by using the ART conditions.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.1 no.1
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• pp.33-36
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• 2000

Auto DOME-reversing system had been installed in a vacuum coating chamber which decreased the coating time, the electric energy spending and the contamination by rotating and revilving substance. Auto multi coating with dual electron beam was accomplished and effective coating area was increased. The coating duration was decreased with 30%. the production efficiency were increased with 50%. Also the surface conductivity the coated film uniformity and anti-reflection capablity were also improved.