• 제목/요약/키워드: Antimony

검색결과 227건 처리시간 0.025초

MOCVD를 이용한 BiSbTe3 박막성장 및 열전소자 제작 (Properties of BiSbTe3 Thin Film Prepared by MOCVD and Fabrication of Thermoelectric Devices)

  • 권성도;윤석진;주병권;김진상
    • 한국전기전자재료학회논문지
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    • 제22권5호
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    • pp.443-447
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    • 2009
  • Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_{2}Te_{3}$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $5{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_{2}Te_{3}$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_{2}Te_{3}$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3 ${\mu}m$ is obtained at the temperature difference of 45 K.

Influence of Annealing Temperature on Crystal Orientation of Electrodeposited Sb2Se3 Thin-Film Photovoltaic Absorbers

  • Kim, Seonghyun;Lee, Seunghun;Park, Jaehan;Kim, Shinho;Kim, Yangdo
    • 한국재료학회지
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    • 제32권5호
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    • pp.243-248
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    • 2022
  • This study demonstrates a different approach method to fabricate antimony selenide (Sb2Se3) thin-films for the solar cell applications. As-deposited Sb2Se3 thin-films are fabricated via electrodeposition route and, subsequently, annealed in the temperature range of 230 ~ 310℃. Cyclic voltammetry is performed to investigate the electrochemical behavior of the Sb and Se ions. The deposition potential of the Sb2Se3 thin films is determined to be -0.6 V vs. Ag/AgCl (in 1 M KCl), where the stoichiometric composition of Sb2Se3 appeared. It is found that the crystal orientations of Sb2Se3 thin-films are largely dependent on the annealing temperature. At an annealing temperature of 250 ℃, the Sb2Se3 thin-film grew most along the c-axis [(211) and/or (221)] direction, which resulted in the smooth movement of carriers, thereby increasing the carrier collection probability. Therefore, the solar cell using Sb2Se3 thin-film annealed at 250 ℃ exhibited significant enhancement in JSC of 10.03 mA/cm2 and a highest conversion efficiency of 0.821 % because of the preferred orientation of the Sb2Se3 thin film.

중동에서 유입된 Kala-azar 1예 (An Imported Case of Kala-azar in Korea)

  • 지제근;송영기
    • Parasites, Hosts and Diseases
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    • 제21권1호
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    • pp.87-94
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    • 1983
  • Kala-azar는 우리나라에는 분포하지 않는 것으로 인정되고 있으나 과거 중국에서 감염되어 국내에서 관찰된 보고가 있는 질병이다. 최근에 중동 지방에서 감염되어 귀국하고 발병하였다고 생각되는 예를 보고한다. 서울에 주소를 둔 26세의 한국인 남자가 1년간 사우디 아라비아에서 건설기능공으로 근무하고 1981년 9월 귀국하여 약 8개월 후인 1982년 5월 경부터 심한 피로감, 전신쇠약, 복부의 수물등을 느끼기 시작하였다. 환자가 국립서울병원을 거쳐 서울대학교병원에 1982년 9월 17일 입원할 당시에는 간과 비장이 모두 14cm정도 만져질 만큼 부어있었고, 심한 체중 감소(4개월간 14kg의 감소), 적혈구, 백혈구, 혈소판등 모든 혈구의 감소등이 관찰되었다. 간생검을 통해 amastigote가 관찰되고 이는 투사전자현미경을 통해서 전형적인 amastigote형으로 확인되었다. 환자는 국외에서 구한 약제인 sodium antimony gluconate(Pentostam )와 각종 보조요법에 의해 치료를 받았다. 퇴원 직전에 시행한 간생검에서 괴사된 간 조직이 섬유화로 대치된 것이 확인되었고 충체는 관찰되지 않았다. 이 Kala-azar 에는 1952년 만주에 유입되어 보고된 3예 이후로는 처음 관찰된 것으로 중동에서 유입된 것으로는 첫번째 보고례이다. 최근 급격히 늘어난 해외 인력진출을 감안하면 해당 지역의 열대 풍토병에 대한 다각적인 대책이 절실히 요청된다.

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VVC 다이오드의 시작연구 (I) (Fabrication of Silicon Voltage Variable Capacitance Diode-(I))

  • 정만영;박계영
    • 대한전자공학회논문지
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    • 제5권3호
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    • pp.9-24
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    • 1968
  • 초단계형(Hyperabrupt) p-n접합에서 접합용량의 인가전압에 의한 변화률이 단순물분포에 따라 변화하는 성질을 이용하여 가변용량다이오드의 최적설계방법 유도하고 표준방송수신용 라디오의 동조용 가변용량실리콘 다이오드를 설계하였고 이다이오드의 제작방법에 관하여 연구하였다. 이때 도너 및 액셉터 불순물로서는 안치모니 및 알루미늅을 진공증착한 후 고온확산로에 넣어 처리하므로서 원하는 분포를 얻으려 하였다.

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Effect of Various Supports on the Physico-chemical Properties of V-Sb Oxides in the Oxidative Dehydrogenation of Isobutane

  • Shamilov, N.T.;Vislovskiy, V.P.
    • 대한화학회지
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    • 제55권5호
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    • pp.812-818
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    • 2011
  • [ $V_{0.9}Sb_{0.1}O_x$ ]systems, bulk and deposited on different supports (five types of ${\gamma}$-aluminas, ${\alpha}$-alumina, silica-alumina, silica gel, magnesium oxide), have been tested in the oxidative dehydrogenation (ODH) of iso-butane. This statement is derived from the data obtained by a set of characterisation techniques(specific surface area measurements, X-ray diffraction, X-ray photoelectron spectroscopy, laser Raman spectroscopy, in situ differential scanning calorimetry and in situ diffuse reflectance-absorption infrared Fourier transform spectroscopy).

A Study on Contact Resistance Reduction in Ni Germanide/Ge using Sb Interlayer

  • Kim, Jeyoung;Li, Meng;Lee, Ga-Won;Oh, Jungwoo;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제16권2호
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    • pp.210-214
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    • 2016
  • In this paper, the decrease in the contact resistance of Ni germanide/Ge contact was studied as a function of the thickness of the antimony (Sb) interlayer for high performance Ge MOSFETs. Sb layers with various thickness of 2, 5, 8 and 12 nm were deposited by RF-Magnetron sputter on n-type Ge on Si wafers, followed by in situ deposition of 15nm-thick Ni film. The contact resistance of samples with the Sb interlayer was lower than that of the reference sample without the Sb interlayer. We found that the Sb interlayer can lower the contact resistance of Ni germanide/Ge contact but the reduction of contact resistance becomes saturated as the Sb interlayer thickness increases. The proposed method is useful for high performance n-channel Ge MOSFETs.

Oxide Glasses for Holographic Data Storage

  • Poirier, Gael;Nalin, Marcelo;Ribeiro, Sidney J.L;Messaddeq, Younes
    • 세라미스트
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    • 제10권3호
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    • pp.86-90
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    • 2007
  • Novel photochromic oxide glasses are presented in this section. These glasses are based on phosphate formers containing both tungsten and antimony atoms. Exposure to visible continuous or pulsed laser beam results in an intense photochromic effect witch is shown to occur in the volume of the glass and results in a broad absorption band in the visible and near infrared. This effect was not identified to be related with a structural change and is assumed to be entirely electronic. A change in the absorption coefficient is observed in function of tungsten content, exposure time and increases with beam power. These glasses have been investigated regarding the possibility of holographic data storage using visible lasers sources. Changes in both refractive index and the absorption coefficient were measured using a holographic setup. The modulation of the optical constants is reversible by heat treatment.

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Infrared Transmitting Glass Ceramics for Passive and Active Applications

  • Zhang, Xianghua;Adam, J.L.
    • 세라미스트
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    • 제10권3호
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    • pp.48-54
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    • 2007
  • Glass-ceramics transparent above $10\;{\mu}m$ in the infrared, have been synthesized. They are based on germanium and antimony sulphides or selenides associated to alkali halides. They are prepared by heating glass samples at temperatures above the glass transition, as a function of time. Ceramisation can be controlled, so that sub-100 nm crystals are generated in the glass matrix. Then, low light scattering is achieved and the transparency window of the original glass is maintained. When gallium sulphide is added, glass ceramics can be doped with rare-earth ions. Emissions from the $^4F_{3/2}$ and $^4I_{13/2}$ of $Nd^{3+}$ and $Er^{3+}$ ions, respectively, are more intense in glass-ceramics, as compared to their vitreous counterpart. Examination of band profiles and decaytimes show that rare-earth ions are embedded in both crystalline and glassy environments.

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$SnCl_4-SbCl_5-H_2O$ 기체혼합물로부터 ATO(Antimony Tin Oxide) 박막의 화학증착에 관한 열역학 및 실험분석 (Thermodynamical and Experimental Analyses of Chemical Vapor Deposition of ATO from SnCl4-SbCl5-H2O Gas Mixture)

  • 김광호;강용관;이수원
    • 한국세라믹학회지
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    • 제29권12호
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    • pp.990-996
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    • 1992
  • Chemical vapor deposition of ATO from SnCl4-SbCl5-H2O gas mixture was investigated with thermodynamic and experimental analyses. Electrical conductivity of the ATO film was much improved under deposition conditions of low input-gas ratio, Psbcl5/Psbcl4. This increase of the conductivity was attributed to donor electrons produced mainly by the pentavalent Sb ions in SnO2 lattice. However high input-gas ratio conditions produced an ATO film consisting of a mixture of SnO2 and very fine Sb2O5 phase. It was found that the deterioration of electrical conductivity and optical transmission of the film was caused by the deposition of fine Sb2O5 phase in the SnO2 matrix.

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스파이더의 측방 압출 공정에 대학 UBET해석 (A UBET Analysis on the Lateral Extrusion Process of a Spider)

  • 이희인;배원병
    • 한국정밀공학회지
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    • 제18권6호
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    • pp.174-181
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    • 2001
  • An upper bound elemental technique(UBET) has been carried out to predict the forming load, the deformation pattern and the extrude length of the lateral extrusion of a spider for the automotive universal joint. For the upper bound analysis, a kinematically admissible velocity field(KAVF) is proposed. From the proposed velocity field, the upper bound load, the deformation pattern and the average length of the extruded billets are determined by minimizing the total energy consumption rate which is a function of unknown velocities at each element. Experiments are carried out with antimony-lead billets at room temperature using the rectangular shape punch. The theoretical prediction of the forming load, the deformation pattern and the extruded length are good in agreement with the experimental results.

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