• Current Optics and Photonics
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• v.6 no.6
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• pp.521-549
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• 2022

Fiber lasers have made remarkable progress over the past three decades, and they now serve far-reaching applications and have even become indispensable in many technology sectors. As there is an insatiable appetite for improved performance, whether relating to enhanced spatio-temporal stability, spectral and noise characteristics, or ever-higher power and brightness, thermal management in these systems becomes increasingly critical. Active convective cooling, such as through flowing water, while highly effective, has its own set of drawbacks and limitations. To overcome them, other synergistic approaches are being adopted that mitigate the sources of heating at their roots, including the quantum defect, concentration quenching, and impurity absorption. Here, these optical methods for thermal management are briefly reviewed and discussed. Their main philosophy is to carefully select both the lasing and pumping wavelengths to moderate, and sometimes reverse, the amount of heat that is generated inside the laser gain medium. First, the sources of heating in fiber lasers are discussed and placed in the context of modern fiber fabrication methods. Next, common methods to measure the temperature of active fibers during laser operation are outlined. Approaches to reduce the quantum defect, including tandem-pumped and short-wavelength lasers, are then reviewed. Finally, newer approaches that annihilate phonons and actually cool the fiber laser below ambient, including radiation-balanced and excitation-balanced fiber lasers, are examined. These solutions, and others yet undetermined, especially the latter, may prove to be a driving force behind a next generation of ultra-high-power and/or ultra-stable laser systems.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.33-40
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• 1993

A reflection type 16x8 S-SEED array from LP(Low Pressure)-MODVD-grown GaAs/AlGaAs extremely shallow quantum well(ESQW) structures, with 4% Al fraction, has been fabricated. Its intrinsic region consists of 50 pairs of alternating 100.angs. GaAs and 100.angs. $Al_{0.04}$Ga$_{0.96}$As layers. A multilayer reflector stack of $Al_{0.04}$/Ga$_{0.96}$ As(599$\AA$)/AlAs(723$\AA$) was incorporated for the reflection plane below the p-i-n structures. The device processing after the MOCVD growth includes the mesa etching, isolation etching, insulator deposition, p & n metallization, and AR(Anti-Reflection) coating. For switching characteristics of the S-SEED in the form of p-i-n ESQW diode, the maximum optical negative resistance was observed at 856nm. Reflectance measurements showed a change from 15.6% to 43.3% for +0.9V to -6V bias. The maximum contrast ration of the S-SEED array was 2.0 and all the 128 devices showed optical bistability with contrast ratios over 2.4 at 5V reverse bias.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.662-666
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• 2005

Silicon nitride $(SiN_x)$ film is a promising material for anti-reflection coating and passivation of multicrystalline silicon (me-Si) solar cells. In this work, a plasma-enhanced chemical vapor deposition (PECVD) system with batch-type reactor tube was used to prepare highly robust $SiN_x$ films for screen-printed mc-Si solar cells. The Gas flow ratio, $R=[SiH_4]/[NH_3]$, in a mixture of silane and ammonia was varied in the range of 0.0910.235 while maintaining the total flow rate of the process gases to 4,200 sccm. The refractive index of the $SiN_x$ film deposited with a gas flow ratio of 0.091 was measured to be 2.03 and increased to 2.37 as the gas flow ratio increased to 0.235. The highest efficiency of the cell was $14.99\%$ when the flow rate of $SiH_4$ was 350 sccm (R=0.091). Generally, we observed that the efficiency of the mc-Si solar cell decreased with increasing R. From the analysis of the reflectance and the quantum efficiency of the cell, the decrease in the efficiency was shown to originate mainly from an increase in the surface reflectance for a high flow rate of $SiH_4$ during the deposition of $SiN_x$ films.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.601-601
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• 2012

본 연구는 Zr이 doping된 ITO target (ITO:Zr)을 $200^{\circ}C$ 이하의 낮은 온도에서 RF magnetron sputtering을 이용한 증착으로 high mobility, high workfunction의 TCO 박막을 제작하고 이를 실리콘 이종접합 태양전지의 front TCO 적용에 관한 연구이다. 상기 공정으로 제작된 ITZO 박막의 가장 낮은 비저항은 $2.58{\times}10-4{\Omega}-cm$이며 이때의 투과도는 90%를 얻을 수 있었다. 또한 기존의 TCO로 사용되던 AZO 및 ITO보다 높은 work function으로 인하여 태양전지의 front TCO 적용시 710 mV 이상의 개방 전압 상승과 band-offset 감소에 따른 34.44 mA 이상의 단락전류 상승을 얻을 수 있었다. 또한 높은 mobility에 의한 면저항 감소로 충진률 상승도 얻을 수 있었다. 상기 인자에 대한 태양전지 특성의 변화는 quantum efficiency 분석으로 규명할 수 있었다.

• Bulletin of the Korean Chemical Society
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• v.30 no.12
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• pp.2905-2908
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• 2009

Immuno-sensing for high accurate and selective sensing was performed by fluorescence spectroscopy and surface plasmon resonance (SPR), respectively. Engineered assembly of two fluorescent quantum dots (QDs) with bovine serum albumin (BSA) and anti-BSA was fabricated in PBS buffer for fluorescence analysis of fluorescence resonance energy transfer (FRET). Furthermore, the same bio-moieties were immobilized on Au plates for SPR analysis. Naturally-driven binding affinity of immuno-moieties induced FRET and plasmon resonance angle shift in the nanoscale sensing system. Interestingly, the sensing ranges were uniquely different in two systems: e.g., SPR spectroscopy was suitable for highly accurate analysis to measure in the range of 10$^{-15{\sim}-10$ng/mL while the QD fluorescent sensing system was relatively lower sensing ranges in 10$^{-10{\sim}-6$ng/mL. However, the QD sensing system was larger than the SPR sensing system in terms of sensing capacity per one specimen. It is, therefore, suggested that a mutual assistance of FRET and SPR combined sensing system would be a potentially promising candidate for high accuracy and reliable in situ sensing system of immune-related diseases.

• Current Optics and Photonics
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• v.5 no.5
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• pp.576-582
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• 2021

Dichroic beam-splitter (DBS) with polarization-maintaining took an important role in the free space quantum telecommunication tests on the Micius satellite of China. In this presentation, we designed and prepared a 50 layer polarization-maintaining DBS coating by a dual ion beam sputtering deposition (Dual-IBS) method. In order to solve a stress problem, an 18 layer special anti-reflection (AR) coating with similar physical thickness ratio was deposited on the backside. By stress compensation, the surface flatness RMS value of the DBS sample decreased from 0.341 λ (@632.8 nm) to 0.103 λ while beam splitting and polarization maintaining properties were almost kept unchanged. Further, we discussed the mechanism of film stress and stress compensation by equation deduction and found that total stress had a strong relationship with the total physical thickness and the ratio of layer materials.

• Progress in Medical Physics
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• v.22 no.4
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• pp.163-171
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• 2011

The purpose of this study was to investigate the effect of various technical parameters for the dose optimization in pediatric chest radiological examinations by evaluating effective dose and effective detective quantum efficiency (eDQE) including the scatter radiation from the object, the blur caused by the focal spot, geometric magnification and detector characteristics. For the tube voltages ranging from 40 to 90 kVp in 10 kVp increments at the FDD of 100, 110, 120, 150, 180 cm, the eDQE was evaluated at the same effective dose. The results showed that the eDQE was largest at 60 kVp when compares the eDQE at different tube voltage. Especially, the eDQE was considerably higher without the use of an anti-scatter grid on equivalent effective dose. This indicates that the reducing the scatter radiation did not compensate for the loss of absorbed effective photons in the grid. When the grid is not used the eDQE increased with increasing FDD because of the greater effective modulation transfer function (eMTF). However, most of major hospitals in Korea employed a short FDD of 100 cm with an anti-scatter grid for the chest radiological examination of a 15 month old infant. As a result, the entrance surface air kerma (ESAK) values for the hospitals of this survey exceeded the Korean DRL (diagnostic reference level) of $100{\mu}Gy$. Therefore, appropriate technical parameters should be established to perform pediatric chest examinations on children of different ages. The results of this study may serve as a baseline to establish detailed reference level of pediatric dose for different ages.

• Proceedings of the Korean Society of Crop Science Conference
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• 2022.10a
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• pp.312-312
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• 2022

Peanut hull as by-product has been discarded during peanut processing. However, peanut hull contains plenty of polyphenols that shows various physiological activities. The objectives of this study were to investigate anti-inflammatory and enzyme inhibitory activities of polyphenols from 'Sinpalkwang' peanut (Arachis hypogaea L.) hull. Compounds were isolated from methanol extracts of peanut hull by preparative-high performance liquid chromatography after identifying and quantifying polyphenols using Ultra performance liquid chromatography (UPLC) and UPLC-Quadrupole time-of-flight-mass spectrometry profiling. The structures of compounds were elucidated by one-dimensional [¹H, ¹³C] nuclear magnetic resonance (NMR) and two-dimensional NMR (correlated spectroscopy, heteronuclear single quantum coherence and heteronuclear multiple bond correlation). Three compounds were identified as 5,7-dihydroxy-4H-chromen-4-one (peak 2), luteolin (peak 4) and eriodictyol (peak 5). Significant differences in inflammatory mediator such as nitric oxide (NO), interleukin-6 (IL-6) and interleukin-1β (IL-lβ) in lipopolysaccharide stimulated Raw 264.7 macrophages and in enzyme (xanthine oxidase [XO] and α-glucosidase [AG]) inhibitory activities were observed between three compounds (p < 0.05). Peak 5 treated Raw 264.7 macrophages showed lower content of NO (16.4 uM), IL-6 (7.0 ng/mL), and IL-1β (60.6 pg/mL) than peak 2 (NO: 28.3 uM, IL-6: 11.3 ng/mL, IL-1β: 66.9 pg/mL) and peak 4 (NO: 24.7 uM, IL-6: 9.3 ng/mL, IL-1β: 62.6 pg/mL). Peak 5 showed higher XO inhibitory activity (84.7%) and higher AG inhibitory activity (52.4%) than peak 2 (XO inhibitory activity: 45.4%, AG inhibitory activity: 21.6%) and peak 4 (XO inhibitory activity: 37.9%, AG inhibitory activity: 37.5%) at concentration of 0.5mg/mL. This study suggests that peanut hull could be a potential source of anti-inflammatory and physiological materials while creating new use of discarded peanut hull as by-products concomitantly.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.127-132
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• 2009

We have investigated the intrinsic defects remaining in epitaxial GaSb layers grown on SI-GaAs substrates compared to those in bulk GaSb crystal substrate, which is a basic material of Sb-based strained-layer superlattice infrared photodetectors. From the functional dependence of the band-to-band transition energy of the photomuminescence (PL) spectra observing up to near room-temperature (250 K), the temperature parameters of [$E_o$, $\alpha$, $\beta$] of undoped GaSb crystal are determined by using the Varshni empirical equation describing the temperature variation of the bandgap energy. Additionally to the antisite-Ga ([$Ga_{Sb}$]) with an ionization energy of 29 meV that is well known to a major intrinsic defect in GaSb, epitaxial GaSb layers show a pair of deep states at the emission energy of 732/711 meV that may be related with a complex of two antisite-Ga and antisite-Sb ([$Ga_{Sb}-Sb_{Ga}$]). Based on the analysis of the temperature and the excitation-power dependences of PL, it suggests that excess-Sb substitutes Ga-site by self-diffusion and two anti sites of [$Ga_{Sb}$] and [$Sb_{Ga}$] could form as a complex of [$Ga_{Sb}-Sb_{Ga}$] in GaSb epilayers grown under Sb-rich condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.