• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.1033-1036
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• 2002

Wafer bonding methods such as fusion and anodic bonding suffer from high temperature treatment, long processing time, and possible damage to the micro-scale sensor or actuators. In the localized bonding process, beating was conducted locally while the whole wafer is maintained at a relatively low temperature. But previous research of localized heating has some problems, such as non-uniform soldering due to non-uniform heating and micro crack formation on the glass capsule by thermal stress effect. To address this non-uniformity problem, a new heater configuration is being proposed. By keeping several points on the heater strip at calculated and constant potential, more uniform heating, hence more reliable wafer bonding could be achieved. The proposed scheme has been successfully demonstrated, and the result shows that it will be very useful in hermetic packaging. Less than 0.2 ㎫ contact Pressure were used for bonding with 150 ㎃ current input for 50${\mu}{\textrm}{m}$ width, 2${\mu}{\textrm}{m}$ height and 8mm $\times$ 8mm, 5mm$\times$5mm, 3mm $\times$ 3mm sized phosphorus-doped poly-silicon micro heater. The temperature can be raised at the bonding region to 80$0^{\circ}C$, and it was enough to achieve a strong and reliable bonding in 3minutes. The IR camera test results show improved uniformity in heat distribution compared with conventional micro heaters. For gross leak check, IPA (Isopropanol Alcohol) was used. Since IPA has better wetability than water, it can easily penetrate small openings, and is more suitable for gross leak check. The pass ratio of bonded dies was 70%, for conventional localized heating, and 85% for newly developed FP scheme. The bonding strength was more than 30㎫ for FP scheme packaging, which shows that FP scheme can be a good candidate for micro scale hermetic packaging.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.413-415
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• 1996

This paper presents a technique for fabricating an electro-optical microlens for microcolumn e-beam system. The device, named Self-Aligned Microlens (SAM) was realized by mixing surface and bulk micromachining technology. The microbridges were formed on both sides of silicon wafer symmetrically. The alignment error between the electrodes could be controlled within a few micrometers with also reducing the numbers of anodic bonding.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.11
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• pp.211-220
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• 2002

Optical disk drives read information by replacing a laser beam on the disk track. As information has become larger, the more accurate position control of a laser beam is necessary. In this paper, we report the analysis and fabrication of the micro mirror for optical disk drivers. A coupled simulation of gas flow and structural displacement of the micro mirror using the Finite-Element-Method is applied to this. The mirror was fabricated by using MEMS technology. Especially, the process using the lapping and polishing step after the bonding of the mirror and electrode plates was employed for the Process reliability. The mirror size was 2.5mm${\times}$3mm and it needed about 35V for displacement of 3.2 ${\mu}$.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.65-69
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• 2002

An Al film deposited on the Kovar alloy substrate was anodically-bonded to the borosilicate glass, and the bond interfaces was closely investigated by transmission electron microscopy. Al oxide was found to form a layer ~l0 nm thick at the bond interface, and fibrous structure of the same oxide was found to grow epitaxially in the glass from the oxide layer. The fibrous structure grew with the bonding time. The mechanism of the formation of this fibrous structure is proposed on the basis of the migration of Al ions under the electric field. Penetration of Al into glass beyond the interfacial Al oxide was not detected. The comparison of the amount of excess oxygen ions generated in the alkali depletion layer with that incorporated in the Al oxide suggests that the growth of the alkali-ion depletion layer is controlled by the consumption of excess oxygen to form the interfacial Al oxide.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.367-372
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• 2020

As packaging processes for atomic gyroscope vapor cells, the glass tube tip-off process, anodic bonding, and paste sealing have been widely studied. However, there are stability issues in the alkali metal which are caused by impurity elements and leakage during high-temperature processes. In this study, we investigated the applicability of a vapor cell low-temperature packaging process by depositing Au on a Pyrex cell in addition to forming an Au-Sn thin film on a cap to cover the cell, followed by laser irradiation of the Au/Au-Sn interface. The mechanism of the thin film bonding was evaluated by XRD, while the packaging reliability of an Ne gas-filled vapor cell was characterized by variation of plasma discharge behavior with time. Furthermore, we confirmed that the Rb alkaline metal inside the vapor cell showed no color change, indicating no oxidation occurred during the process.

• Korean Chemical Engineering Research
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• v.44 no.5
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• pp.513-519
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• 2006

We developed two kinds of the microchip for application to electrophoresis based on both glass and quartz employing the MEMS fabrications. The poly-Si layer deposited onto the bonding interface apart from channel regions can play a role as the optical slit cutting off the stray light in order to concentrate the UV ray, from which it is possible to improve the signal-to-noise (S/N) ratio of the detection on a chip. In the glass chip, the deposited poly-Si layer had an important function of the etch mask and provided the bonding surface properly enabling the anodic bonding. The glass wafer including more impurities than quartz one results in the higher surface roughness of the channel wall, which affects subsequently on the microflow behavior of the sample solutions. In order to solve this problem, we prepared here the mixed etchant consisting HF and $NH_4F$ solutions, by which the surface roughness was reduced. Both the shape and the dimension of each channel were observed, and the electroosmotic flow velocities were measured as 0.5 mm/s for quartz and 0.36 mm/s for glass channel by implementing the microchip electrophoresis. Applying the optical slit with poly-Si layer provides that the S/N ratio of the peak is increased as ca. 2 times for quartz chip and ca. 3 times for glass chip. The maximum UV absorbance is also enhanced with ca. 1.6 and 1.7 times, respectively.

• Bulletin of the Korean Chemical Society
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• v.24 no.11
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• pp.1609-1612
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• 2003

The electrooxidation of 8-(3-acetylimino-6-methyl 2,4-dioxopyran)-1-aminonaphthaline (AMDAN) in aqueous and non aqueous media led to the formation of polymeric films, poly (AMDAN). The monomer, undergo anodic oxidation through the formation of a monocation radical irrespective of the nature of the medium. In aqueous medium, the monocation radical undergoes, through its resonance structures, dimerisation involving tail-to-tail, head-to-tail and even head-to-head coupling. The products formed, being more easily oxidisable than the parent substance, undergo further oxidation at the same potential so that the overall oxidation involves a one-step (i.e., a single wave), two-electron process. In non-aqueous medium, the monocation radical does not undergo dimerisation through coupling reactions. Retaining its identity, monomer oxidise in two steps involving one electron in each step. The fact that the cathodic peaks corresponding to these anodic peaks are rarely observed indicates fast consumption of the electrogenerated monocation radicals and dications by follow-up chemical reactions to produce polymeric products (poly AMDAN). The electrochemical behavior of the formed polymer films was investigated in both non aqueous and aqueous media. The films prepared in non aqueous medium were found to be more electroactive than that the films prepared in aqueous medium. This is confirmed with the results in litreature which illustrate that the film prepared in aqueous solution hold water in its structure via hydrogen bonding, which causes decomposition reactions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.69-74
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• 2010

A new package substrate for dynamic random access memory(DRAM) devices has been developed using selective aluminum anodization. Unlike the conventional substrate structure commonly made by laminating epoxy-based core and copper clad, this substrate consists of bottom aluminum, middle anodic aluminum oxide and top copper. Anodization process on the aluminum substrate provides thick aluminum oxide used as a dielectric layer in the package substrate. Placing copper traces on the anodic aluminum oxide layer, the resulting two-layer metal structure is completed in the package substrate. Selective anodization process makes it possible to construct a fully filled via structure. Also, putting vias directly in the bonding pads and the ball pads in the substrate design, via in pad structure is applied in this work. These arrangement of via in pad and two-layer metal structure make routing easier and thus provide more design flexibility. In a substrate design, all signal lines are routed based on the transmission line scheme of finite-width coplanar waveguide or microstrip with a characteristic impedance of about $50{\Omega}$ for better signal transmission. The property and performance of anodic alumina based package substrate such as layer structure, design method, fabrication process and measurement characteristics are investigated in detail.

• Applied Chemistry for Engineering
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• v.27 no.5
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• pp.472-477
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• 2016

We studied the effects of anodic oxidation treatments of carbon fibers on interfacial adhesion of the carbon fibers-reinforced epoxy matrix composites with various current densities. The surface of treated carbon fibers was characterized by atomic force microscope (AFM), field emission-scanning electron microscope (FE-SEM), Fourier transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS). The interlaminar shear strength (ILSS) of the composites was determined by a short beam shear test. This result showed that both the roughness and oxygen group of the carbon fibers surface increased in proportion to the current density. After anodic-oxidation-treated, the ILSS also increased as a function of the current density. In addition, the proportional relationship between ILSS and phenolic hydroxyl group was confirmed. The ILSS of the CF-2.0 sample increased by 4% compared to that of the CF-AS sample, because the anodic oxidation treatment increased the oxygen group and roughness on the carbon fibers surface, which leading to the improvement of the interfacial adhesion of the carbon fibers-reinforced epoxy matrix composites. Among these, the phenolic hydroxyl group which has the proportional relationship with ILSS is found to be the most important factor for improving the interfacial adhesion of the carbon fibers-reinforced epoxy matrix composites.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.13-16
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• 2013

A lot of various researches have been going on to use heat spreader for LED module. Nano porous aluminum anodic oxide (AAO) applied LED, which is produced from anodization, is easy and economically advantageous. Convensional LED module is consist of aluminum/adhesive/copper circuit. The polymer adhesive in this module is used as heat spreader. However the thermal emission of LED component is degraded because of low heat conductivity of polymer and also reliability of LED component is reduced. Therefore, AAO in this work was applied to heat spreader of LED module which has higher heat conductivity compare to polymer. Bonding strength between AAO and copper circuit was improved with Ti/Cu seed layer by copper sputtering process (DBC) before the bonding. And this copper circuit has been fabricated by electro plating method. Peel strength of AAO and copper circuit in this work showed range between 1.18~1.45 kgf/cm with anodizing process which is very suitable for high power LED application.