• Title/Summary/Keyword: Anodic Aluminum Oxide

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AAO Template Morphology Controlled by Variation of Anodizing Condition (양극 산화 조건 변화에 따른 AAO Template Morphology 제어)

  • Jo, Ye-Won;Lee, Sung-Gap;Kim, Kyeong-Min
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.4
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    • pp.249-251
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    • 2015
  • In this study, the application of biosensor having a large surface area for more effective and AAO (anomic aluminium oxide) template in order to gain concentration and voltage of anodizing process morphology changes to the control of experiments were conducted. The biosensor surface may increase the response characteristics by having a large surface area. So the entrance to a little more efficient wide depth sensing experiment was carried out to obtain a structure body with a branch shape with a large surface area with increasing. Experimental results from the FE-SEM observation was obtained template morphology. As a result, depending on the anodizing time, the depth of the layer of aluminum oxide was found that it was confirmed that the deepening of the pore size changes according to anodizing condition. And measuring the detection performance according to the conditions in the electrolyte and the reaction because of blood using a biosensor measuring sensing property according to the depth of the pore depth is considered that does not have a significant impact.

Etch Characteristics of NbOx Nanopillar Mask for the Formation of Si Nanodot Arrays (Si Nanodot 배열의 형성을 위한 NbOx 나노기둥 마스크의 식각 특성)

  • Park, Ik Hyun;Lee, Jang Woo;Chung, Chee Won
    • Applied Chemistry for Engineering
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    • v.17 no.3
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    • pp.327-330
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    • 2006
  • We investigated the usefulness of $NbO_{x}$ nanopillars as an etching mask of dry etching for the formation of Si nanodot arrays. The $NbO_{x}$ nanopillar arrays were prepared by the anodic aluminum oxidation process of Al and Nb thin films. The etch rate and etch profile of $NbO_{x}$ nanopillar arrays were examined by varying the experimental conditions such as the concentration of etch gas, coil rf power, and dc bias voltage in the reactive ion etch system using the inductively coupled plasma. As the concentration of $Cl_{2}$ gas increased, the etch rate of $NbO_{x}$nanopillars decreased. With increasing coil rf power and dc bias voltage, the etch rates were found to increase. The etch characteristics and etch mechanism of $NbO_{x}$ nanopillars were investigated by varying the etch time under the selected etch conditions.

Annealing Temperature Dependence on Anodizing Properties of ZrO2/Al Films Prepared by Sol-gel Method (졸-겔법으로 제조된 ZrO2/Al막의 열처리 온도에 따른 양극산화 특성)

  • 박상식;이병택
    • Journal of the Korean Ceramic Society
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    • v.40 no.9
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    • pp.909-915
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    • 2003
  • Anodic oxide films on aluminum play an important role as a dielectrics in aluminum electrolytic capacitor. In order to obtain the high capacitance, ZrO$_2$ films were coated on aluminum foils by sol-gel method and then, the properties of anodized films were studied. The coating and drying of the films were repeated 4-10 times and annealed at 300~$600^{\circ}C$ and the triple layer of ZrO$_2$/Al-ZrO$_{x}$ /Al$_2$O$_3$ was formed onto aluminum substrates after anodizing of ZrO$_2$/Al film. The thickness of $Al_2$O$_3$ layer was decreased with increasing the annealing temperature due to the densification of ZrO$_2$ film. The ZrO$_2$ films were crystallized even at 30$0^{\circ}C$ and showed nanocrystalline structure. The. capacitance of aluminum foil annealed at low temperature was higher than that at high temperature. The increase of capacitance was due to the high capacitance of ZrO$_2$ film annealed at low temperature. The capacitance of ZrO$_2$ coated aluminum increased about 3 times compared to that without a ZrO$_2$ layer after anodizing to 400 V. From these results, the aluminum foils with composite oxide layers are found to be applicable to the aluminum electrolytic capacitor.

Study on the fabrication variable process for AAO which are uniform (균일한 AAO 제작을 위한 공정변수 연구)

  • Choo, Won-Il;Jung, Hyun-Young;Kim, Ja-Oll;Jung, Yong-Ho;Lee, Bong-Ju;Lee, Seung-Heun;Kwon, Sung-Ku
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.271-271
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    • 2009
  • AAO(Anodic Aluminum Oxide)는 전형적인 자기정렬 되는 물질로 이루어진 나노 다공성 구조이며 많은 나노 기술적으로 응용이 되고 있다. 양극산화 알루미나 기술은 간단한 공정으로 경제적이며 규칙적인 배열의 나노 크기의 육각형의 셀 형태의 hole구조를 형성할 수 있는 장점을 가지고 있다. 이런 나노 다공성 구조는 나노 단위의 물질을 형성하는 Template로 유용하게 쓰인다. 균일한 대면적 AAO의 형성을 위한 공정 step의 개선, 공정변수의 영향에 대하여 연구 중이며 공정변수의 조절에 따라 hole의 직경, 길이, 균일성을 제어 가능하며 제작된 AAO의 특성은 FE-SEM, AFM을 이용하여 분석한다.

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AAO 나노패턴을 응용한 실리콘 태양전지의 특성 연구

  • Choe, Jae-Ho;Lee, Jeong-Taek;Choe, Yeong-Ha;Kim, Geun-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.250-250
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    • 2009
  • The fabricated the nanostructural patterns on the surface of SiN antireflection layer of polycrystalline Si solar cell using anodic aluminum oxide (AAO) masks in an inductively coupled plasma(ICP) etching process. The AAO nanopattern mask has the hole size of about 70~75nm and lattice constant of 100~120nm. The transferred nano-patterns were observed by the scanning electron microscope (SEM). The voltage of patterned Si solar cell enhanced.

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Fabrication of Si Nano-Pattern by using AAO for Crystal Solar Cell (단결정 태양전지 응용을 위한 AAO 실리콘 나노패턴 형성에 관한 연구)

  • Choi, Jae-Ho;Lee, Jung-Tack;Kim, Keun-Joo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.419-420
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    • 2009
  • The authors fabricated the nanostructural patterns on the surface of SiN antireflection layer of polycrystalline Si solar cell and the surface of crystalline Si wafer using anodic aluminum oxide (AAO) masks in an inductively coupled plasma(ICP) etching process. The AAO nanopattern mask has the hole size of about 70~80nm and an ave rage lattice constant of 100nm. The transferred nano-patterns were observed by the scanning electron microscope (SEM) and the enhancement of solar cell efficiency will be presented.

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Study on non-nickel-based sealing of anodic porous aluminum oxide by using NaAlO2 (알루민산 염을 포함한 다공성 알루미나의 무니켈 봉공처리제에 관한 연구)

  • Kim, Mun-Su;Yu, Hyeon-Seok;Choe, Jin-Seop
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.190.1-190.1
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    • 2016
  • 봉공처리법은 다공성 알루미나를 제조 후에 내마모성의 증가, 침지된 염료의 봉인 등을 필요로 하여 이용하는 후처리 공정 중 하나이다. 상업적으로는 물 봉공처리나 니켈-아세트산 용액을 이용한 봉공처리를 주로 이용하지만 고온을 필요로 하거나 인체에 유독한 용액을 사용, 혹은 추가적인 봉공처리를 해주어야 한다는 단점들을 가지고 있다. 이에 본 연구에서는 독성이 적고 상온에서도 다공성 알루미나와 쉽게 반응할 수 있는 알루미늄 음이온 용액을 봉공처리에 이용하였다. 알루미늄 음이온 용액을 이용한 봉공처리는 알루미늄의 양극 산화를 진행한 이후에 알루미늄 음이온을 포함한 봉공처리제를 제조 후, 침지 처리하는 방식으로 봉공처리하였다. 봉공처리제의 pH 변화, 온도 변화, 침지 시간 등의 변수 요소에 따라서 최적화를 진행하였으며, 이 용액으로 봉공처리가 가능한지 주사 전자 현미경 분석을 통해 평가하였다. 이후 최적화된 조건과 기존에 상업적으로 사용하던 봉공처리법을 거친 후에 경도, 부식전위 검사, 내화학성 검사를 통해 성능의 변화를 확인하였으며 광전자 분광기를 통해 성분과 메카니즘을 예측하였다.

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A study on the fabrication of CdS nanowires using by Alumina Membrane (알루미나 멤브레인을 이용한 CdS nanowire 제작에 관한 연구)

  • Seo, Mun-Su;Lee, Su-Ho;Yoo, Hyun-Min;Lee, Jae-Hyeong;Choi, Won-Seok;Kim, Do-Young
    • Proceedings of the KIEE Conference
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    • 2011.07a
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    • pp.1493-1494
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    • 2011
  • CdS nanostructure materials have been fabricated in porous anodic aluminum oxide (AAO) template by using chemical bath deposition (CBD). These nanostructure materials had uniform diameters of about 15e200 nm, which correspond to the pore sizes of the templates used, and the length was up to 40 mm. X-ray diffraction (XRD) investigation demonstrates that CdS nanostructure materials were hexagonal polycrystalline in nature. As the pore diameter of AAO templates was enlarged, the preferential orientation of c-axis was improved. From PL analysis, the sulfur-deficient defects at the surfaces of CdS nanostructure materials were increasedwhen the samplewas synthesized in the template with larger pore diameter.

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Young's modulus measurements of nanohoneycomb structures by flexural test in atomic force microscope (원자현미경에서 굽힘 실험을 통한 나노허니컴 구조물의 영률 측정)

  • Choi, Duk-Hyun;Jeon, Ji-Hoon;Lee, Pyung-Soo;Hwang, Woon-Bong;Lee, Kun-Hong;Park, Hyun-Chul
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2005.11a
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    • pp.133-136
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    • 2005
  • 원자현미경을 이용하여 나노허니컴 구조물의 굽힘 탄성계수를 측정하였다. 나노허니컴 구조물의 단면적은 기공들의 배열 때문에 위치마다 다르게 되고, 이로 인해 관성 영역 모멘트는 상수값으로 계산되지 않는다. 본 연구에서는 나노허니컴 구조물의 단위 면적 내 관성 영역 모멘트 평값을 벌크 구조의 나노허니컴 구조물의 영률로 가정하였다. 단위 면적 내 광성 영역 모멘트 평균값과 나노허니컴 구조물의 기공률 사이에 관계식이 유도되었다. 기공의 직경이 31 nm 인 양극 산화 알루미늄 필름이 나노허니컴 구조물로 제작되었다. 양극 산화 알루미늄의 영률이원자현미경을 이용한 굽힘 실험으로 측정되었으며, 나노 인장시험기의 인장 실험 결과와 비교되었다.

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