• Title/Summary/Keyword: Anodic

Search Result 1,274, Processing Time 0.034 seconds

Measurement of Glass-Silicon Interfacial fracture Toughness and Experimental Evaluation of Anodic Bonding Process based on the Taguchi Method (다구찌 방법에 의한 유리-실리콘 양극접합 계면의 파괴인성치 측정 및 양극접합공정 조건에 따른 접합강도 분석)

  • Kang, Tae-Goo;Cho, Young-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.26 no.6
    • /
    • pp.1187-1193
    • /
    • 2002
  • Anodic bonding process has been quantitatively evaluated based on the Taguchi analysis of the interfacial fracture toughness, measured at the interface of anodically bonded silicon-glass bimorphs. A new test specimen with a pre-inserted blade has been devised for interfacial fracture toughness measurement. A set of 81 different anodic bonding conditions has been generated based on the three different conditions for four different process parameters of bonding load, bonding temperature, anodic voltage and voltage supply time. Taguchi method has been used to reduce the number of experiments required for the bonding strength evaluation, thus obtaining nine independent cases out of the 81 possible combinations. The interfacial fracture toughness has been measured for the nine cases in the range of 0.03∼6.12 J/㎡. Among the four process parameters, the bonding temperature causes the most dominant influence to the bonding strength with the influence factor of 67.7%. The influence factors of other process parameters, such as anodic voltage and voltage supply time, bonding load, are evaluated as 18%, 12% and 2.3%, respectively. The maximum bonding strength of 7.23 J/㎡ has been achieved at the bonding temperature of 460$\^{C}$ with the bonding load of 45gf/㎠, the applied voltage of 600v and the voltage supply time of 25minites.

Micromorphometric Influence of Anodic oxidation surface implant conditioned with tetracycline-HCI (양극 산화 임플란트 표면 구조에 대한 염산 테트라싸이클린의 영향)

  • Lim, Jeong-Taek;Chung, Jong-Hyuk;Kwon, Young-Hyuk;Park, Joon-Bong;Herr, Yeek
    • Journal of Periodontal and Implant Science
    • /
    • v.37 no.4
    • /
    • pp.767-777
    • /
    • 2007
  • The present study was performed to evaluate the effect of Tetracycline-HCI on the change of implant surface microstructure according to application time. Anodic oxidation surface were utilized. Implant surface was rubbed with 50mg/ml Tetracycline-HCI solution for ${\frac{1}{2}}min.$, 1min., $1{\frac{1}{2}}min.$, 2min., $2{\frac{1}{2}}min.$, and 3min. respectively in the test group. Then, specimens were processed for Ra Value test and scanning electron microscopic observation. The results of this study were as follows. 1. The anodic oxidation surface roughness tests don't show significant difference on conditioning with saline and Tetracycline-HCI. 2. The anodic oxidized surfaces showed the craterous structures. The surface conditioning with Tetracycline-HCI didn't influence on its micro-morphology. In conclusion, Anodic oxidation implant surface is stable to detoxificate with 50mg/ml Tetracycline-HCI of implant surface.

Preparation of Nano Wire by Anodic Oxidation II. Production of Nano Wire Using Anodic Alumina Template (양극산화법에 의한 나노와이어 제조 II. 알루미나 템플레이트를 이용한 나노와이어 제조)

  • Jo, Su-Haeng;O, Han-Jun;Park, Chi-Seon;Jang, Jae-Myeong;Jo, Nam-Don;Ji, Chung-Su
    • Korean Journal of Materials Research
    • /
    • v.12 no.1
    • /
    • pp.89-93
    • /
    • 2002
  • To investigate the effect of properties of pores in anodic alumina template(AAT) on the formation and characteristics of metal nano wires, Cu and Ni nano wires were manufactured using anodic alumina template formed in various electrolytes. The characteristics of prepared metal nano wires using AAT could be replicated from those of pores in AAT. The diameters of nano wires could be controlled by the widening process of anodic porous film in $H_3PO_4$ solution. The shape ratio of the nano wire was shown to be $170{\pm}30$ for Ni nano wire formed by AAT made in sulfuric acid.

Growth of High Uniform Polycrystalline Grain on the Highly Ordered Porous Anodic Alumina (다공질 양극산화 피막을 이용한 고균일 다결정 살리콘의 성장)

  • Kim, Jong-Yeon;Han, Jin-Woo;Kim, Young-Hwan;Kim, Byoung-Yong;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.06a
    • /
    • pp.375-375
    • /
    • 2007
  • In the conventional crystallization method, thepoly-Si TFTs show poor device-to-device uniformity because of the random location of the grain boundaries. However, our new crystallization method introduced in this paper employed substrate-embedded seeds on the highly ordered anodic alumina template to control both the location of seeds and the number of grain boundaries intentionally. In the process of excimer laser crystallization (ELC), a-Si film deposited on the anodic alumina by low pressure chemical vapor deposition (LPCVD) is transformed into fine poly-Si grains by explosive crystallization (XC) prior to primary melting. At the higher energy density, the film is nearly completely melted and laterally grown by super lateral growth (SLG) from remained small part of the fine poly-Si grains as seeds at the Si/anodic alumina interface. Resultant grain boundaries have almost linear functions of the number of seeds in concavities of anodic alumina which have a constant spacing. It reveals the uniformity of. device can be enhanced prominently by controlling location and size of pores which contains fine poly~Si seeds under artificial anodizing condition.

  • PDF

AN ELECTROCHEMICAL STUDY ON THE OXIDATION' AND REDUCTION OF DENTAL AMALGAM (치과용 아말감의 산화환원에 관한 전기화학적 연구)

  • Yi, In-Bog;Lee, Myong-Jong
    • Restorative Dentistry and Endodontics
    • /
    • v.18 no.2
    • /
    • pp.431-445
    • /
    • 1993
  • The purpose of this study was to observe corrosion characteristics of six dental amalgams and was to analyse corrosion products electrochemically. After each amalgam alloy and Hg was triturated as the direction of the manufacturer by using mechanical amalgamator, the triturated mass was inserted into the cylinderical metal mold ($12{\times}10mm$) and was condensed with 160kg/$cm^2$ by using the hydrolic press. The specimen was removed from the mold and was stored at room temperature for 1 week, and was polished with amalgam polishing kit. The anodic and cathodic polarization curve was obtained by using cyclic voltammetric method with 3-electrode potentiostat in saline for each amalgam and Ag, Sn, Cu plate specimen at $37{\pm}0.5^{\circ}C$. The potential sweep range was -1.7V~0. 4V(vs SCE) in working electrode and scan rate was 50mV/s and the exposed surface area of each specimen to the electrolytic solution was $0.79cm^2$. The results were as follows. 1. In anodic-cathodic polarization curve of amalgam specimens, two anodic current rising areas and two cathodic current peaks were obtained at the low Cu amalgam(CF, CS) specimen and three anodic current rising areas and three cathodic current peaks were obtained at the high Cu amalgam (TY, DS, HV) specimen. 2. As this compared with the anodic and cathodic current peak potentials of Sn, Cu and Ag specimen, the first cathodic current peak I c was caused by the reduction of divalent tin salt, second cathodic current peak IIIc results from the reduction of quadravalent tin salt, and third cathodic current peak me results from the reduction of copper salt. 3. As reverse potential sweeping was done repeatedly, anodic current was decreased slightly in all amalgam specimens.

  • PDF

Formation Behavior of Anodic Oxide Films on Al 6061 Alloy in Sulfuric Acid Solution (황산 용액에서 Al6061 합금의 아노다이징 피막 형성거동)

  • Moon, Sungmo;Jeong, Kihun;Lim, Sugun
    • Journal of the Korean institute of surface engineering
    • /
    • v.51 no.6
    • /
    • pp.393-399
    • /
    • 2018
  • Formation behavior of aluminum anodic oxide (AAO) films on Al6061 alloy was studied in view of thickness, morphology and defects in the anodic films in 20 vol.% sulfuric acid solution at a constant current density of $40mA/cm^2$, using voltage-time curve, observation of anodized specimen colors and surface and cross-sectional morphologies of anodic films with anodization time. With increasing anodizing time, voltage for film formation increased exponentially after about 12 min and its increasing rate decreased after 25 min, followed by a rapid decrease of the voltage after about 28 min. Surface color of anodized specimen became darker with increasing anodizing time up to about 20 min, while it appeared to be brighter with increasing anodizing time after 20 min. The darkened and brightened surfaces with anodizing time are attributed to an increase in thickness of porous anodic oxide film and a chemical damage of the films due to heat generated by increased resistance of the film, respectively. Cross-sectional observation of AAO films revealed the formation of defects of crack shape at the metal/oxide interface after 15 min which prevents the growth of AAO films. Width and length of the crack-like defect increased with anodizing time up to 25 min of anodizing, and finally the outer part of AAO films was partly dissolved or detached after 30 min of anodizing, resulting in non-uniform surface structures of the AAO films.

Formation of Anodic Oxide Films on As-Cast and Machined Surfaces of Al-Si-Cu Casting Alloy (주조용 Al-Si-Cu 알루미늄 합금의 기계가공 및 주조된 표면에서의 양극산화피막 형성)

  • Moon, Sung-Mo;Nam, Yoon-Kyung;Yang, Cheol-Nam;Jeong, Yong-Soo
    • Journal of the Korean institute of surface engineering
    • /
    • v.42 no.6
    • /
    • pp.260-266
    • /
    • 2009
  • The anodic oxidation behaviour of a cast component of AC2A Al alloy with machined surface and ascast surface was investigated in sulfuric acid solution. The anodized specimen showed relatively uniform and thick anodic oxide films on the as-cast surface, while non-uniform and very thin oxide films were formed on the machined surface. Non-anodized as-cast surface was observed to be covered with thick oxide scales and showed a number of second-phase particles containing Si, while non-anodized machined surface showed no oxide scales and relatively very small number of Si particles. Thus, the very limited growth of anodic oxide films on the as-cast surface was attributed to the presence of thick oxide scales and Si-containing second-phase particles on its surface.

Mechanism of Intercalation Compounds in Graphite with Hydrogen Sulfate (I. Study of Intermediate Phase between 2 Stage and 1 Stage in Graphite Hydrogen Sulfate with Anodic Oxidation) (흑연에 황산을 Intercalation 시킬때의 Mechanism 규명 (I. 전기적 산화방법에 의한 Graphite Salts의 중간상에 관한 연구))

  • 고영신;한경석;이풍헌
    • Journal of the Korean Ceramic Society
    • /
    • v.22 no.6
    • /
    • pp.5-8
    • /
    • 1985
  • Graphite has been oxidized to graphite hydrogen sulfate in concentrated $H_2SO_4$. Anodic oxidation and chemical oxidation of graphite in $H_2SO_4$ generally leads to the formation of intercalation compounds of the ionic salt type through incorporation of $H_2SO_4^-$ions and $H_2SO_4$ molecules into the graphite. Several other reactions also accur at various points of the charging cycle. But there is no satisfactory kinetics and mechanism of intercalationin graphite. We have studied them with anodic oxidation and chemical oxidation. We found six distinct phenomena between 2nd stage and 1st stage in chemical oxidation. We examined them in detail by the following in the measurements electrical oxidation. X-ray diffractions UV-Vis spectroscopy density measurements. We could obtained a equation for kinetic according to the reaction rate from this results and mechanism of intercalation between 2nd stage and 1st stage with hydrogen sulfate in graphite. Three thesis were written for the mechanism of intercalation compounds in graphite with hydrogen sulfate ; first thesis is anodic oxidation second thesis is chemical oxidation and definition of transit phase between 2nd etc the third thesis is the kinetic mechanism of intercalation compounds in graphite with Hydrogen sulfate. This thesis is the first paper among three thesis as anodic oxidation.

  • PDF

Anodic Oxidation Lithography via Atomic Force Microscope on Organic Resist Layers (유기 저항막을 이용한 원자힘 현미경 양극산화 패터닝 기술)

  • Kim, Sung-Kyoung;Lee, Hai-Won
    • Polymer(Korea)
    • /
    • v.30 no.3
    • /
    • pp.187-195
    • /
    • 2006
  • Atomic force microscope (AFM)-based anodic oxidation lithography has gained great in forests in fabricating nanometer scale features on semiconductor or metal substrates beyond the limitation of optical lithography. In this article AFM anodic oxidation lithography and its organic resist layers are introduced based on our previous works. Organic resist layers of self-assembled monolayers, Langmuir-Blodgett films and polymer films aye suggested to play a key role in enhancing the aspect ratio of producing features, the lithographic speed, and spatial precision in AFM anodic oxidation lithography.

The gas sensing characteristic of the porous tungsten oxide thin films based on anodic reaction (양극반응으로 제조된 다공질 WO3 박막의 가스센서 특성)

  • Lee, Hong-Jin;Song, Kap-Duk;Lee, Duk-Dong
    • Journal of Sensor Science and Technology
    • /
    • v.17 no.1
    • /
    • pp.9-14
    • /
    • 2008
  • In this paper, the gas responses of tungsten oxide films prepared by anodic reaction was discussed. Sensing electrodes and heating electrodes were patterned by photolithography method on quartz substrate. Porous tungsten oxide was fabricated in electrolyte solutions of 5 % HF (HF :$C_2H_6OH:H_2O$=3 : 2 : 20) by anodic reaction. The anodic reaction with metal (platinum wire) as a cathode and the sensing device as an anode was conducted under the various reaction times (1-10 min) at 10 mA/$cm^2$ The surface structure and morphology of the fabricated sensor have been analysed by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). All the peaks of XRD results were well indexed to the pure phase pattern. The average diameter of the porous tungsten oxide surface were ranged about 100 nm. The fabricaed sensor showed good sensitivity to 200 ppm toluene at operating temperature of $250^{\circ}C$.