• Title/Summary/Keyword: Anodic

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ALLOY STRUCTURE AND ANODIC FILM GROWTH ON RAPIDLY SOLIDIFIED AL-SI-BASED ALLOYS

  • Kim, H.S.;Thompson, G.E.;Wood, G.C.;Wright, I.G.;Maringer, R.E.
    • Journal of the Korean institute of surface engineering
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    • v.17 no.2
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    • pp.29-40
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    • 1984
  • The structure of rapidly solidified Al-Si-based alloys and its relationship to subsequent anodic film growth in near neutral and acid solutions have been investigated. Solidification of the alloys proceeds via pre-dendritic nuclei, associated with rugosity of the casting surface, from which cellular-type growth, comprised of aluminium-rich material surrounded by silicon-containing material, emanates. Observation of ultramicrotomed sections of the alloys and their anodic films reveals the local oxidation of the silicon-rich phase and its incorporation into the anodic alumina film, formed in near neutral solutions. Such incorporation occurs but resultant isolation of the silicon-rich phase is not possible for anodizing in phosphoric acid, and a three-dimensional network of the oxidized silicon-containing phase, with continuing development of porous anodic alumina, is observed.

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A Study on the Infrared Radiation Properties of Anodized Aluminum (양극산화된 알루미늄의 적외선 복사특성 연구)

  • 강병철;최정진;김기호
    • Journal of the Korean institute of surface engineering
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    • v.35 no.3
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    • pp.149-157
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    • 2002
  • Spectral emissivity depends on the surface conditions of the materials. The mechanisms that affect the spectral emissivity in anodic oxide films on aluminum were investigated. The aluminum specimens were anodized in a sulfuric acid solution and the thickness of the resulting oxide film formed changed with the anodizing time. FT-IR spectrum analysis identified the anodic oxide film as boehmite ($Al_2$$O_3$.$H_2$O). Both the infrared emisivity and reflectivity of the anodized aluminum were affected by the structure of the anodic oxide film because Al-OH and Al-O-Al have a pronounced absorption band in the infrared region of the spectrum. The presence of an anodic oxide film on aluminum caused a rapid drop in the infrared reflectivity. An aluminum surface in the clean state had an emissivity of approximately 0.2. However, the infrared emissivity rapidly increased to 0.91 as the thickness of the anodic oxide film increased.

Determination of Trace Germanium by Anodic Stripping Polarography (Anodic Stripping Polarograph에 의한 극미량 게르마늄의 분석(II))

  • Choi, Won-Hyung;Lee, Jong-Moo
    • Analytical Science and Technology
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    • v.5 no.1
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    • pp.17-24
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    • 1992
  • Germanium(IV) was determinated in perchloric acid supporting electrolyte solution containing catechol derivates 3.4-dihydroxy benzoic acid, 3.4-dihydroxy benzaldehyde, adrenaline by hanging mercury electrode(HMDE) of anodic stripping polarography. And then to apply this experimental method for determination of germanium(IV) in natural samples. Germanium(IV) was determinated $300{\mu}g/L$ in ginseng and $210{\mu}g/L$ in mineral water.

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Growth mechanism of anodic oxide for MCT passivation (MCT 표면보호를 위한 양극산화막 성장)

  • 정진원;왕진석
    • Electrical & Electronic Materials
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    • v.8 no.3
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    • pp.352-356
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    • 1995
  • Native oxide layer on MCT (HgCdTe) has been grown uniformly in H$\_$2/O$\_$2/ electrolyte through anodic oxidation method. It has been determined that anodic oxidation of HgCdTe in H$\_$2/O$\_$2/ electrolyte proceeds immediately with the input of constant currents without any induction time required for anodic oxideation in KOH electrolyte. Oxide layer with the resistivity of 2*10$\^$10/.ohm.cm and the refractive index of 2.1 suggested the possibility of well matching combination layer with ZnS for MCT MIS device. XPS results indicated that the major components of oxide layer grown in H202 solution is TeO$\_$2/ with the possibility of small amounts of CdTeO$\_$3/.

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Anodizing science of valve metals

  • Moon, Sungmo
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.96.1-96.1
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    • 2017
  • This presentation introduces anodizing science of typical valve metals of Al, Mg and Ti, based on the ionic transport through the andic oxide films in various electrolyte compositions. Depending on the electrolyte composition, metal ions and anions can migrate through the andic oxide film without its dielectric breakdown when point defects are present within the anodic oxide films under high applied electric field. On the other hand, if anodic oxide films are broken by local joule heating due to ionic migration, metal ions and anions can migrate through the broken sites and meet together to form new anodic films, known as plasma electrolytic oxidation (PEO) treatment. In this presentation, basics of conventional anodizing and PEO methods are introduced in detail, based on the ionic migration and movement mechanism through anodic oxide films by point defects and by local dielectric breakdown of anodic oxide films.

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Superhydrophobic and Hydrophobic Anodic Aluminum Anodic Oxide Layer: A Review (초발수성 및 발수성 알루미늄 양극산화피막의 최신 연구 동향)

  • Lee, Junghoon
    • Journal of the Korean institute of surface engineering
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    • v.51 no.1
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    • pp.11-20
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    • 2018
  • Hydrophobic and Superhydrophobic surfaces are promising technology for the surface finishing of metallic materials due to its water-repellency. Realization of highly water-repellent surface on aluminum and its alloys provides various functionalities for real application fields. In order to realize the hydrophobic/superhydrophobic surfaces on aluminum and its alloys, various technologies have been demonstrated. Especially, traditional anodic oxidation for aluminum has been widely employed for the morphological texturing of surfaces, which is essential to enhance the hydrophobic efficiency. De-wetting superhydrophobic surface on aluminum provides various exceptional properties, such as anti-corrosion, anti-/de-icing, anti-biofouling, drag reduction, self-cleaning and liquid separation. Nevertheless, the durability and stability of superhydrophobic surfaces still remain challenges for their actual applications in engineering systems and industry. In this review, the theoretical/experimental studies and current technical limitations on the hydrophobic and superhydrophobic surface using anodic oxidation of aluminum have been summarized.

The Study on Anodic Bonding (양극접합에 관한 연구)

  • 정철안;박정도;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.338-341
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    • 1996
  • Anodic bonding is a key technology for micromechanical components. The main advantages of this method can be formed in a batch process, over large areas, and is permanent and irreversible. In this paper, the bonding was performed at temperatures ranging from 300 to 450 $^{\circ}C$, voltages 400 to 1000 V, and times 10 to 30 minutes. The sizes of the Si and the Pyrex #7740 glass were 6 mm $\times$6 mm, respectively. Bonding processes and voids were observed by the optical microscope, and the composition of the anodic bonding interface was analyzed by the SIMS. Optimum condition of the anodic bonding was at temperature above 40$0^{\circ}C$ without regard to voltage.

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A Study on the Properties of Anodic Oxide Films Formed on Al Alloys in Oxalic Acid (알루미늄 합금 소재의 옥살산 아노다이징 피막 물성 연구)

  • Jeong, Nagyeom;Park, Jihyun
    • Journal of the Korean institute of surface engineering
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    • v.53 no.5
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    • pp.249-256
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    • 2020
  • As the size of manufacturing equipment for LCD and OLED displays increases, replacement of existing heavy stainless steel components with light metals, such as aluminum alloys, is being more important in semiconducting and display manufacturing industries. To use aluminum alloys for components in semiconducting and display industries, it is important to develop a new anodization method for improved performance of anodic oxide films than conventional anodization method based on sulfuric acid. In this work, optimum applied current density and the best sealing methods for anodic oxide films in 3% oxalic acid were explored. Experimental results showed 2.5 A/dm2 is the best applied current density for improved hardness and dielectric breakdown voltage. Sealing of the anodic oxide films further improved their hardness, dielectric breakdown voltage and resistance to HCl, by which application of anodic oxide films become applicable for components in semiconducting and display industries.

Electrical Conductivity Change of (Mn, X) oxide by Anodic Deposition (Anodic deposition법으로 제조한 (Mn, X)산화물의 전기전도도 변화)

  • Kim, Bong-Seo;Lee, Dong-Yoon;Lee, Hee-Woong;Chung, Won-Sub
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.386-387
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    • 2005
  • anodic deposition법으로 제조된 $MnO_2$와 (Mn, Zn) 산화물의 전도도를 측정하였다. 제조된 Mn 산화물의 조성은 XRD와 EDS를 이용하여 $MnO_2$ 와 Mn 복합산화물로 확인되었다. DV-Xa법으로 계산된 이론 전자상태 계산 결과 천이금속을 첨가하게 되면, Mn 복합 산화물의 에너지 갭이 감소하는 것으로 나타났다. anodic deposition법으로 제조된 $MnO_2$와 Mn 복합 산화물의 전기전도도를 비교하면 천이금속이 첨가된 복합 산화물의 특성이 우수한 것으로 나타났다.

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Effects of Heat Treatments of Aluminum Substrate on Nanopore Arrays in Anodic Alumina (열처리가 알루미나 나노기공의 배열에 미치는 영향)

  • Cho, S.H.;Oh, H.J.;Kim, S.S.;Joo, E.K.;Yoo, C.W.;Chi, C.S.
    • Korean Journal of Materials Research
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    • v.12 no.11
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    • pp.856-859
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    • 2002
  • To investigate effects of heat treatments including grain size control in substrate aluminum on nanopore arrays in anodic alumina template, aluminum was heat treated at $500^{\circ}C$ for 1h. The heat treated aluminum was anodized by two successive anodization processes in oxalic solution and the nanopore arrays in anodic alumina layer were studied using TEM and FE-SEM. The highly ordered porous alumina templates with 110 nm interpore distance and 40 nm pore diameter have been observed and the pore array of the anodic alumina has a uniform and closely-packed honeycomb structure. In the case of alumina template obtained from heat treated aluminum substrate, the well- ordered nanopore region in anodic alumina increased and became more homogeneous compared with that from non-heattreated one.