• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.677-680
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• 2012

The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.

• 제어로봇시스템학회:학술대회논문집
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• 1990.10a
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• pp.779-782
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• 1990

Recently batch type cold rolling processes have been replaced by continuous annealing type processes for cold rolled sheets of mild steel and high strength steel in order to obtain higher productivity, labor saving. In the continuous annealing line, it is very important to maintain the target steel strip temperature at the exit side of each furnace. The automation system of continuous annealing line is based on a hierachical composition. This paper shows how to preset the set value of furnace temperature control for the heating section in a continuous annealing line. Saying in other words, this paper presents the development of an adaptive control approach to control the exit strip temperature in the continuous annealing line. There are three parts in this approach; one is a process modelling and another is recursive parameter estimation and the other is a design of temperature controller.

• Korean Journal of Materials Research
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• v.30 no.1
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• pp.44-49
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• 2020

The effect of intercritical annealing temperature on the microstructure and mechanical properties of Fe-9Mn-0.2C-3Al-0.5Si medium manganese steels containing Cu and Ni is investigated in this study. Six kinds of medium manganese steels are fabricated by varying the chemical composition and intercritical annealing temperature. Hardness and tensile tests are performed to examine the correlation of microstructure and mechanical properties for the intercritical annealed medium manganese steels containing Cu and Ni. The microstructures of all the steels are composed mostly of lath ferrite, reverted austenite and cementite, regardless of annealing temperature. The room-temperature tensile test results show that the yield and tensile strengths decrease with increasing intercritical annealing temperature due to higher volume fraction and larger thickness of reverted austenite. On the other hand, total and uniform elongations, and strain hardening exponent increase due to higher dislocation density because transformation-induced plasticity is promoted with increasing annealing temperature by reduction in reverted austenite stability.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.346.2-346.2
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• 2016

The rear side contact recombination in the crystalline silicon solar cell could be reduced by back surface field. We formed polycrystalline silicon as a back surface field through crystallization of amorphous silicon. A thin silicon oxide applied to the passivation layer. We used quasi-steady-state photoconductance measurement to analyze electrical properties with various annealing condition. And, blister formed on surface of wafer during the annealing process. We observed the blister after varied annealing process with wafer of various surface. Shape and density of blister is influenced by various annealing temperature and process time. As the annealing temperature became higher, the average diameter of blister is decreased and total number of blister is increased. The sample with the $600^{\circ}C$ annealing temperature and 1 min annealing time exhibited the highest implied open circuit voltage and lifetime. We predicted that the various shape and density of blister affects the lifetime and implied open circuit voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.422-426
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• 2003

Cu thin films of $6000{\AA}$ thickness were deposited by Electron Beam Evaporation(EBE) method on the glass. The resistivity properties and adhesion of Cu thin films were investigated by various annealing and substrate temperature. Cu thin films were annealed in the air and vacuum condition for 10 min after the deposition. The resistivity and adhesion(the force required to separate films from substrates) was measured by 4-point probe and scratch testing. The resistivity of non-annealing Cu thin films was distinguished more substrate temperature loot than substrate temperature R.T, $200^{\circ}C$. In the case of air condition annealing, as heating temperature was increased, the resistivity was decreased. In the case of vacuum condition annealing, the resistivity was increased at heating temperature $200^{\circ}C$. The best resistivity($1.72\;{\mu}{\Omega}{\cdot}cm$) of Cu thin films was obtained by the air condition heating temperature $200^{\circ}C$ at the substrate heating temperature $100^{\circ}C$. As a result of scratch testing, adhesion was increased by annealing. And maximum adhesion had 600 gf.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.36-37
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• 2006

Titanium oxy-nitride ($TiN_O_y$) thin films were deposited on $SiO_2$/Si substrates using reactive dc magnetron sputtering, and were then annealed at various temperatures in air ambient to incorporate oxygen into the films. The effect of annealing temperature on the structural and electrical properties of the films was investigated. The grain size of the films decreases with increasing annealing temperature. On the other hand, crystallinity of the films is independent of annealing temperature in air ambient. Resistivity of the films increases remarkably as an annealing temperature increases and temperature coefficience of resistance (TCR) of the films varies from a positive value to a negative value. The films annealed at $350^{\circ}C$ for 30 min exhibited a near-zero TCR value of approximately -5 ppm/K. The decrease of the grain size with increasing annealing temperature was attributed to an increase of oxygen concentration incorporated into the films during anncaling treatment.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.34-41
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• 1993

Effect of high temperature annealing conditions on Ta$_{2}O_{5}$ thin films was investigated. Ta$_{2}O_{5}$ thin films were deposited on P-type silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using tantalum ethylate. Ta(C$_{2}H_{5}O)_{5}$, and nitrous oxide. N$_{2}$O. The microstructure changed from amorphous to polycrystalline above 700.deg. C annealing temperature. The refractive index, dielectric onstant and leakage current of the film increased as annealing temperature increased. However, annealing in oxygen ambient reduced leakage currents and dielectric constant due to the formation of interfacial SiO$_{2}$ layer. By optimizing annealing temperature and ambient, leakage current lower than 10$^{-8}$ A/cm$^{2}$ and maximum capacitance of 9 fF/${\mu}m^{2}$ could be obtained.

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.306-309
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• 2019

Titanium (Ti) doped indium oxide (In₂O₃) films were deposited on glass substrates by RF magnetron sputtering and the films were rapid thermal annealed at 100, 200, and 300℃, respectively to investigate the influence of the rapid annealing on the opto-electrical performance of the films. The grain size of In₂O₃ (222) plane increased with annealing temperatures and their electrical resistivity decreased to as low as 8.86×10^-4 Ωcm at 300℃. The visible transmittance also improved from 77.1 to 79.5% when the annealing temperature increased. The optical band gap of the TIO films shifted from 4.010 to 4.087 eV with increases in annealing temperature from room temperature to 300℃. The figure of merit shows that the TIO films annealed at 300℃ had better optical and electrical performance than the other films prepared using lower-temperature or no annealing.

• Journal of the Korean Society for Precision Engineering
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• v.11 no.2
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• pp.173-181
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• 1994

A Cold spot temperature control system for the batch annealing furnace has been estabilished in order to reduce energy consumption to improve productivity and stabilize the propertics of products. Therefore we confirmed a relation between annealing cycle time and atmospheric gas, variation of coil cold spot temperature with time during heating and actual temperature measurements at mid-width of each coil during heating and actual temperature measurements at mid-width of each coil during soaking. The results of the tempaeature variation effect on the batch annealing are as follows. 1) Heating time is reduced to one half with increasing atmospheric gas flow rate and changing of atmospheric gas component from HNx to Ax gas, and annealing cycle time is reduced to 2.7 times. 2) In case of short time healing, the slowest heating part is the center of B coil, in case of long time heating, the low temperature point moves from the center of coil to inside coil. And the temperature in this part is higher than other parts when cooling. When finished heating, the cold spot is located 1/3 of coil inside in case of HNx atmospheric gas. But center of coil in case of Ax atmospheric gas. 3) The outside of top coil is the highest temperature point when heating, which becomes the lowest temperature point when cooling. So, this point becomes high temperature zone at heating and low temperature zone at cooling, It has relation according to atmospheric gas component and flow rate. 4) Soaking time at batch annealing cycle determination is made a decision by the input coil width, and soaking time for quality homogenization of 1214mm width coil must be 2.5 hours longer than that of 914mm width coil for the same ciol weight. 5) Annealing cycle time with Ax atmospheric gas is extended 1 hour in of slow cooling during 5 hours in order to avoid rapid cooling.

• Corrosion Science and Technology
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• v.14 no.6
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• pp.296-300
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• 2015

ALDC8 (Al-Si-Cu) alloy has been often corroded with pattern of intergranular corrosion in corrosive environments. Thus, in order to improve its corrosion resistance, the effect of annealing heat treatment to corrosion resistance and hardness was investigated with parameters of heating temperatures such as $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$ for 1hr. The hardness was varied with annealing temperature and slightly decreased with annealing heat treatment. However, the relation between annealing temperature and hardness agreed not well each other. Corrosion potential was shifted to noble direction and corrosion current density was also decreased with increasing annealing temperature. Moreover, both AC impedance at 10 mHz and polarization resistance on the cyclic voltammogram curve were also increased with increasing annealing temperature. Furthermore, intergranular corrosion was somewhat observed in non heat treatment as well as annealing temperatures at $100^{\circ}C$, $200^{\circ}C$ and $300^{\circ}C$, while, intergranular corrosion was not nearly observed at annealing temperature of $400^{\circ}C$, $500^{\circ}C$. Consequently, it is considered that the annealing heat treatment of ALDC8 alloy may be an available method not only to inhibit its intergranular corrosion but also to improve its corrosion resistance.