• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1016-1022
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• 2001

This study presents the microstructure-electrical property relationship of reactive-sputtered Ta$_2$O$_{5}$ MIM capacitor structure processed by annealing in a vacuum and $O_2$ ambience. A microstructural investigation showed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-Ta$_2$O$_{5}$ in $700^{\circ}C$ annealing. On annealing under the $O_2$ atmosphere, the Ta$_2$O$_{5}$ film exhibited the trend of its composition\`s approaching to stoichiometry from off-stoichiometry, analyzed by EPMA, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. In the case of low temperature vacuum-annealing treatment, the leakage current behavior was stable irrespective of applied electric field. In the high temperature-annealed film at a vacuum condition, the electrical properties was observed to deteriorate. The results state that in Ta$_2$O$_{5}$ film annealed at $O_2$ atmosphere, gives rise to improvement of electrical characteristics in the capacitor were improved by reducing oxygen-vacancy and dandling Ta-O bond.-O bond.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3312-3316
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• 2013

Single crystals of hexagonal graphenes were successfully grown on Cu foils using the atmospheric pressure chemical vapor deposition (CVD) method. We investigated the effects of reaction parameters, such as the growth temperature and annealing time, on the size, coverage, and density of graphene domains grown over Cu foil. The mean size of the graphene domains increased significantly with increases in both the growth temperature and annealing time, and similar phenomena were observed in graphene domains grown by low pressure CVD over Cu foil. From the comparison of micro Raman spectroscopy in the graphene films grown with different annealing times, we found that the nucleation and growth of the domains were strongly dependent on the annealing time and growth temperature. Therefore, we confirmed that when reaction time was same, the number of layers and the degree of defects in the synthesized graphene films both decreased as the annealing time increased.

• Korean Journal of Materials Research
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• v.30 no.5
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• pp.246-251
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• 2020

The annealing characteristics of cold-rolled Al-6.5Mg-1.5Zn-0.5Fe-0.5Mn alloy, newly designed as an automobile material, are investigated in detail, and compared with those of other aluminum alloys. Using multi-pass rolling at room temperature, the ingot aluminum alloy is cut to a thickness of 4 mm, width of 30 mm, and length of 100 mm to reduce the thickness to 1 mm (r = 75 %). Annealing after rolling is performed at various temperatures ranging from 200 to 500 ℃ for 1 hour. The specimens annealed at temperatures up to 300 ℃ show a deformation structure; however, from 350 ℃ they have a recrystallization structure consisting of almost equiaxed grains. The hardness distribution in the thickness direction of the annealed specimens is homogeneous at all annealing temperatures, and their average hardness decreases with increasing annealing temperature. The tensile strength of the as-rolled specimen shows a high value of 496 MPa; however, this value decreases with increasing annealing temperature and becomes 338 MPa after annealing at 400 ℃. These mechanical properties of the specimens are compared with those of other aluminum alloys, including commercial 5xxx system alloys.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.152-155
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• 1996

Platinum thin films were deposited on $Al_2$O$_3$substrate by DC magnetron sputtering for RTD(Resistance Thermometer Devices) temperature sensors. We made Pt resistance pattern on $Al_2$O$_3$substrate by lift-off method and fabricated Pt-RTD temperature sensors by using W-wire, silver epoxy and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$, we investigated TCR(temperature coefficient of resistance) and resistance ratio of Pt-RTD temperature sensors. TCR values were increased with increasing the annealing temperature, time and the thickness of Pt thin films. Resistance values were varied lineally within the range of measurement temperature. At annealing temperature of 100$0^{\circ}C$, annealing time of 240min and thin film thickness of 1${\mu}{\textrm}{m}$, we obtained Pt-RDT TCR value of 3825ppm/$^{\circ}C$ closed to the Pt bulk value.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.8
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• pp.335-341
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• 2003

The composites were fabricated respectively 61vo1.% $\beta$ -SiC and 39vo1.% Ti $B_2$ spray-dried powders with the liquid forming additives of l2wt% $Al_2$ $O_3$＋ $Y_2$ $O_3$ by pressureless annealing at 1$700^{\circ}C$, 175$0^{\circ}C$, 180$0^{\circ}C$ for 4 hours. The result of phase analysis of composites by XRD revealed $\alpha$ -SiC(6H), Ti $B_2$, and YAG(A $l_{5}$ $Y_3$ $O_{12}$ ) crystal phase. The relative density, the Young's modulus and fracture toughness showed respectively the highest value of 92.97%, 92.88Gpa and 4.4Mpaㆍ $m^{\frac{1}{2}}$ for composites by pressureless annealing temperature 1$700^{\circ}C$ at room temperature. The electrical resistivity showed the lowest value of 8.09${\times}$10$^{-3}$ ㆍcm for composite by pressureless annealing temperature 1$700^{\circ}C$ at $25^{\circ}C$. The electrical resistivity of the SiC-Ti $B_2$ composites was all positive temperature cofficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.5
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• pp.1227-1234
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• 1994

A cold spot temperature control system for the batch annealing furnace has been established in order to reduce energy consumption which is essential to improve productivity and stabilize the properties of products. A relationship between annealing cycle time and gas flow rate is developed and also for the variation of coil cold spot temperature with time during heating, and actual temperature measurements at mid-width of each coil during soaking. The results of the temperature variation effect on the cold rolled steel sheet batch annealing are as follows. (1) Cooling rate increasing gradually with increasing atmospheric gas flow, but heating rate is hardly increasing without atmospheric gas component change. (2) In case of short time heating, the slowest heating part is the center of B coil and in case of ling time heating, the low temperature point moves from the center of coil to inside coil. (3) The outside of top coil is the highest temperature point under heating, which becomes the lowest temperature point under cooling. (4) Soaking time determination depends on the input coil width, and soaking time for quality homogenization of 1214 mm width coil must be 2 hours longer than that of 914 mm width coil.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.538-540
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• 2009

The SBN thin films were deposited at substrate temperature of 300[$^{\circ}C$] on Pt-coated electrode (Pt/Ti/$SiO_2$/Si(100)) using RF sputtering method. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 750[$^{\circ}C$]. The voltage dependence of dielectric loss showed a value within 0.01 in voltage ranges of -5~+5[V]. The capacitance characteristics showed a stable value of about 0.7[${\mu}F/cm^2$].

• Journal of the Korean Society for Heat Treatment
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• v.17 no.2
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• pp.78-86
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• 2004

Effects of the annealing parameters on the formation of ferrites transformed at low temperatures were studied in cold-rolled ultra low carbon steels with niobium and/or chromium. Niobium and chromium were found to be effective in the formation of the low temperature transformation ferrites. The low temperature transformation ferrites more easily formed when both higher annealing temperature and longer annealing time, allowing substitutional alloying elements to distribute between phases, are in combination with faster cooling rate. It was found from EBSD study that the additions of niobium or chromium resulted in the increase in the numbers of high angle grain boundaries and the decrease in those of the low angle grain boundaries in the microstructures. Both granular bainitic ferrite and bainitic ferrite were characterized by the not clearly etched grain boundaries in light microscopy because of the low angle grain boundaries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.314-317
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• 1997

The electrical and physical characteristics of aluminum oxide and Pt thin films on it, deposited by reactive sputtering and DC magnetron sputtering respectively, were analyzed with increasing annealing temperature(400~80$0^{\circ}C$) by four point probe, SEM and XRD. Under $600^{\circ}C$ of annealing temperature, aluminum oxide had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin films and the resistivity of Pt thin films was improved. But these properties of aluminum oxide and Pt thin films on it were degraded over $700^{\circ}C$ of annealing temperature because aluminum oxide was changed into metal aluminum and then reacted to Pt thin films deposited on it. In the analysis of the thermal charateristics of Pt micro-heater fabricated on Si07/si substrate, the temperature of Pt micro-heater is up to 41$0^{\circ}C$ with the power dissipation 1.8 watts.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.05a
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• pp.166-169
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• 2004

Permalloys were successfully fabricated by melt drag casting in the present study, and their variation of microstructure and consequent magnetic properties were investigated as a function of Si contents and annealing temperature. The increases in Si content and annealing temperature resulted in the increases of grain size and amount of $FeNi_3$ ordered phase. Both the grain size and $FeNi_3$ ordered phase controlled by Si and annealing temperature had a important role on permeability of permalloys.