• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.274-277
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• 2000

Thin Film Transistor(TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature(500$^{\circ}C$) Metal-Induced Lateral Crystallization(MILC) furnace annealing and high -temperature (700$^{\circ}C$) rapid thermal annealing leads to the improvement of the material quality The TFTs measured with this two-step annealing material exhibit better characteristics than those obtained by using conventional MILC furnace annealing.

• 한국표면공학회지
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• 제33권2호
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• pp.101-106
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• 2000

SOI (Silicon-On-Insulator) substrates were fabricated with varying annealing temperature of $25-660^{\circ}C$ by a linear annealing method, which was modified RTA process using a linear shape heat source. The annealing method was applied to Si ∥ $SiO_2$/Si pair pre-contacted at room temperature after wet cleaning process. The bonding strength of SOI substrates was measured by two methods of Razor-blade crack opening and direct tensile test. The fractured surfaces after direct tensile test were also investigated by the optical microscope as well as $\alpha$-STEP gauge. The interface bonding energy was 1140mJ/m$^2$ at the annealing temperature of $430^{\circ}C$. The fracture strength was about 21MPa at the temperature of $430^{\circ}C$. These mechanical properties were not reported with the conventional furnace annealing or rapid thermal annealing method at the temperature below $500^{\circ}C$. Our results imply that the bonded wafer pair could endure CMP (Chemo-Mechanical Polishing) or Lapping process without debonding, fracture or dopant redistribution.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.725-728
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• 2001

We have fabricated thin films using the DC/RF magnetron sputtering of 74wt%Ni-l8wt%Cr-4wt%Al-4wt%Cu alloy target and studied the effect of the process parameters on the electrical properties for low TCR(Temperature Coefficient of Resistance) films. In sputtering process, pressure, power and substrate temperature, are varied as controllable parameter. The films are annealed to 400$^{\circ}C$ in air and nitrogen atmosphere. The sheet resistance, TCR of the films increases with increasing annealing temperature. It abruptly increased as annealing temperature increased over 300$^{\circ}C$ in air atmosphere. From XRD, it is found that these results are due to the existence of NiO on film surface formed by annealing. As a results of them, TCR can be controlled by variation of sputter process parameter and annealing of thin film.

• 열처리공학회지
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• 제7권3호
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• pp.175-183
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• 1994

The effect of batch annealing conditions and austenitizing temperatures on the hardness and microstructural factors were examined by using 420J2 martensitic stainless steel. In spite of the similler hardness after batch annealing, the difference in hardness at the same austenitizing temperature was caused by changes in dissolved carbon during batch annealing. The highest hardness of the specimen was obtained at the batch annealing temperature of $820^{\circ}C$ and austenitizing temperature of $1050^{\circ}C$. The main factor affecting the final hardness of the cold annealed 420J2 specimen was proved to the austenitizing temperature rather than batch annealing temperature.

• 한국재료학회지
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• 제22권11호
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• pp.591-597
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• 2012

For heat exchanger applications, 2-ply clad materials were fabricated by rolling of aluminum (Al) and mild steel sheets. Effects of annealing temperature on interface properties, especially on inter-layer formation and softening of strain hardened mild-steel, for Al/mild steel clad materials, were investigated. To obtain optimum annealing conditions for the Al/mild steel clad materials, annealing temperature was varied from room temperature to $600^{\circ}C$. At the annealing temperature about $450^{\circ}C$, an inter-layer was formed in an island-shape at the interface of the Al/mild steel clad materials; this island expanded along the interface at higher temperature. By analyzing the X-ray diffraction (XRD) peaks and the energy dispersive X-ray spectroscopy (EDX) results, it was determined that the exact chemical stoichiometry for the inter-layer was that of $Fe_2Al_5$. In some samples, an X-layer was formed between the Al and the inter-layer of $Fe_2Al_5$ at high annealing temperature of around $550^{\circ}C$. The existence of an X-layer enhanced the growth of the inter-layer, which resulted in the delamination of the Al/mild-steel clad materials. Hardness tests were also performed to examine the influence of the annealing temperature on the cold deformability, which is a very important property for the deep drawing process of clad materials. The hardness value of mild steel gradually decreased with increasing annealing temperature. Especially, the value of hardness sharply decreased in the temperature range between $525^{\circ}C$ and $550^{\circ}C$. From these results, we can conclude that the optimum annealing temperature is around $550^{\circ}C$ under condition of there being no X-layer creation.

• Bulletin of the Korean Chemical Society
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• 제32권3호
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• pp.939-942
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• 2011

Conductive carbon films were prepared at room temperature by unbalanced magnetron sputtering (UBMS) on silicon substrates using argon (Ar) gas, and the effects of post-annealing temperature on the structural, tribological, and electrical properties of carbon films were investigated. Films were annealed at temperatures ranging from $400^{\circ}C$ to $700^{\circ}C$ in increments of $100^{\circ}C$ using a rapid thermal annealing method by vacuum furnace in vacuum ambient. The increase of annealing temperature contributed to the increase of the ordering and formation of aromatic rings in the carbon film. Consequently, with increasing annealing temperature the tribological properties of sputtered carbon films are deteriorated while the resistivity of carbon films significantly decreased from $4.5{\times}10^{-3}$ to $1.0{\times}10^{-6}\;{\Omega}-cm$ and carrier concentration as well as mobility increased, respectively. This behavior can be explained by the increase of sp2 bonding fraction and ordering $sp^2$ clusters in the carbon networks caused by increasing annealing temperature.

• 대한금속재료학회지
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• 제48권9호
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• pp.856-860
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• 2010

Silver nanoparticles were formed on silica substrates through thin film dewetting at high temperature. The microstructural and morphological evolution of the particles were characterized as a function of processing variables such as initial film thickness, annealing time, and temperature. Silver thin films were deposited onto the silica using a pulsed laser deposition system and annealed in reducing atmosphere to induce agglomeration of the films. The film thicknesses before dewetting were in the range of 5 to 25 nm. A noticeable agglomeration occurs with annealing at temperatures higher than $300^{\circ}C$, and higher annealing temperature increases particle size uniformity for the same film thickness sample. Average particle size linearly correlates to the film thickness, but it does not strongly depend on annealing temperature and time, although threshold temperature for complete dewetting increases with an increase of film thickness. Lower annealing temperature develops faceted surface morphology of the silver particles by enhancing the growth of the low index crystal plane of the particles.

• 한국세라믹학회지
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• 제31권10호
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• pp.1176-1180
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• 1994

The sliding wear behavior of the plasma-sprayed zirconia containing 3 mol% yttria was investigated after the annealing at room temperature to 80$0^{\circ}C$ in various concentrations of humid atmosphere as laboratory, humid, dry argon atmosphere. Both of the friction coefficient and the wear loss increased with increasing temperature up to 80$0^{\circ}C$. Surface morphology of the worn samples changed with annealing temperature. The change of monoclinic/tetragonal (m/t) x-ray peak intensity ratio effected the wear behavior. The m/t ratio had maximum value at 20$0^{\circ}C$ and decreased with increased temperature in laboratory and humid atmosphere. In argon atmosphere the m/t ratio had no maximum value and decreased with increasing temperature. At all the annealing temperature humid atmosphere had more the m/t ratio value than any other atmosphere. The change of toughness was showed the inversed result of m/t ratio change. The results indicated that the resudial stress which was induced by the different amount of phase transformation takes a detrimental role in wear behavior.

• 한국세라믹학회지
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• 제31권2호
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• pp.171-176
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• 1994

The spin-casted PLZT(9/65/35) thin films through polymeric sol-gel process were prepared on Pt substrate. The crack-free, uniform and dense films were obtained by post-annealing at the temperature between 35$0^{\circ}C$ and $700^{\circ}C$. The composite structure mixed together with large grains called "rosette" and surrounding small grains were observed on the films annealed over $600^{\circ}C$. Pyrochlore phase was completely changed to perovskite phase above $600^{\circ}C$ with the increase of annealing temperature. Dielectric constant (k) was larger with the increase of film thickness and annealing temperature. from the measurements of dielectric constant as a function of measuring temperature, it was also observed that Curie temperature was shifted to higher temperature with the increase of film thickness and annealing temperature. The pyroelectric coefficient(P) of 10 times coated film annealed at $700^{\circ}C$ was 65 $\mu$C/$\textrm{cm}^2$.K.$.K.

• Transactions on Electrical and Electronic Materials
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• 제2권1호
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• pp.22-26
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• 2001

ITO (Indium-tin-oxide) thin films were deposited on glass substrates by a dc magnetron sputtering system using ITO powder target. The methods of heat treatment are important factor to obtain high quality ITO films with low electrical resistivity and good optical transmittance. Therefore, both methods of the substrate temperature and post-deposition annealing temperature have been compared on the film structural, electrical and optical properties. A preferred orientations shifts from (411) to (222) peak at annealing temperature of 200$\^{C}$. Minimum resistivity of ITO film is approximately 8.7$\times$10$\^$-4/ Ωcm at substrate temperature of 450$\^{C}$. Optical transmittances at post annealing temperature above 200$\^{C}$ are 90%. As a result, the minimum value of annealing temperature that is required for the recrystallization of as-deposited ITo thin films is 200$\^{C}$.