• Journal of Magnetics
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• v.11 no.1
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• pp.55-59
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• 2006

The effect of annealing temperature on the permeability and giant magneto-impedance (GMI) behaviors of $Fe_{68.5}Mn_{5}Si_{13.5}B_9Nb_3Cu_1$ amorphous alloy has been systematically investigated. The nanocrystalline $Fe_{68.5}Mn_{5}Si_{13.5}B_9Nb_3Cu_1$ alloys consisting of ultra-fine $(Fe,Mn)_3Si$ grains embedded in an amorphous matrix were obtained by annealing their precursor alloy at the temperature range from $500^{\circ}C\;to\;600^{\circ}C$ for 1 hour in vacuum. The permeability and GMI profiles were measured as a function of external magnetic field. It was found that the increase of both the permeability and the GMI effect with increasing annealing temperature up to $535^{\circ}C$ was observed and ascribed to the ultrasoft magnetic properties in the sample, whereas an opposite tendency was found when annealed at $600^{\circ}C$ which is due to the microstructural changes caused by high-temperature annealing. The study of temperature dependence on the permeability and GMI effect showed some insights into the nature of the magnetic exchange coupling between nanocrystallized grains through the amorphous boundaries in nanocrystalline magnetic materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.581-586
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• 2010

The porous Si (PS) was annealed at various temperature in air, argon, and nitrogen atmosphere. Structural and optical properties of the annealed PS were investigated by scanning electron microscopy (SEM) and photoluminescence (PL). It is found that the shape of pore is changed from circle to channel as increasing annealing temperature which was annealed in air and argon atmosphere. In case of PS annealed in nitrogen atmosphere, the shape of pore is changed from channel to circle with increase annealing temperature from 600 to $800^{\circ}C$. The PL peak position is blue-shifted with increasing annealing temperature. As annealing temperature increases, the PL intensity of the PS annealed in argon is decreased but that of the PS annealed in nitrogen is increased. It might be due to the formation of Si-N bonds and it passivates the non-radiative centers which is Si dangling bonds on the surface of the PS.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.879-888
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• 2001

The effects of final annealing temperature on the microstructure and creep characteristics were investigated for the Zr-lNb-0.2X (X=0, Mo, Cu) and Zr-lNb- 1Sn-0.3Fe-0.1X (X=0, Mo, Cu) alloys. The microstructures were observed by using TEM/EDS, and grain size and distributions of precipitates were analyzed using a image analyzer. The creep test was performed at $400^{\circ}C$ under applied stress of 150 MPa for 10 days. The $\beta$-Zr was observed at annealing temperature above $600^{\circ}C$. In the temperature above$ 600^{\circ}C$, the grain sizes of both alloy systems appeared to be increased with increasing the final annealing temperature. The creep strengths of Zr-1Nb-1Sn-0.3Fe-0.1X alloys were higher than those of Zr-1Nb-0.2X ones due to the effect of solid solution hardening by Sn in Zr-lNb-lSn-0.3Fe-0.1X alloy system. Also, Mo addition showed the strong effect of precipitate hardening in both alloy systems. The creep strength rapidly decreased with increasing the annealing temperature up to $600^{\circ}C$. However, a superior creep resistance was obtained in the sample that annealed to have a second phase of $\beta$-Zr. It was considered that the appearance of $\beta$-Zr would play an important role in the strengthening mechanism of creep deformation.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.155-160
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• 2010

The effect of process temperature of a final annealing step in the fabrication of phase change memory (PCM) devices was investigated. Discrete PCM devices employing $Ge_2Sb_2Te_5$ (GST) films as an active element were made in a pore-style configuration, and they were annealed at various temperatures ranging from 160 to $300^{\circ}C$. The behaviors of cell resistance change from SET resistance to RESET resistance were totally different according to the annealing temperatures. There was a critical annealing temperature for the fabrication of normal PCM devices and abnormal operations were observed in some devices annealed at temperatures lower or higher than the critical temperature. Those influences of annealing temperature seem closely related to the thermal stability of a top electrode/GST/heating layer multilayer structure in the PCM devices.

• Journal of IKEEE
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• v.26 no.4
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• pp.705-709
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• 2022

The effect of the annealing temperature of the poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE)) solid electrolyte layer on the electrical properties of the P(VDF-TrFE)-based memristor was analyzed. In morphological analyses, the P(VDF-TrFE) thin film with 200℃ annealing temperature (200P(VDF-TrFE)) was shown to have surface roughness ≈5 times larger and thickness ≈20% smaller than that with 100℃ annealing temperature (100P(VDF-TrFE)). Compared to the 100P(VDF-TrFE) memristor (M100), the set voltage of the 200P(VDF-TrFE) memristor (M200) decreased by ≈50% and the magnitude of its reset voltage increased by ≈30%. Moreover, M200 was found to have better memory retention characteristics than M100. These differences were attributed to relatively strong local electric fields inside M200 compared to M100. This study suggests the importance of the annealing temperature in polymer memristors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.99-102
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• 2003

Tin dioxide thin films were deposited at $375^{\circ}C$ on alumina substrate by metal-organic chemical vapor deposition process to find the relationship between physicochemical properties and the annealing treatments. The small grains with heat treatments grew to the bunch of grains and then showed the hillocks on the film surface. The thickness decreased with annealing treatment. The measured binding energy (BE) and branching ratio of the Sn 3d spin-orbital doublet were typical of oxidized states of Sn and the BE of the O1s core level of about 530~530.65eV also confirmed the presence of O-Sn bonds. The BE of oxygen and tin with annealing treatment shifted to higher position. O/Sn atomic ratios of films deposited at $375^{\circ}C$ for 2min and 4min were 1.99 and 2.01, respectively. The value of the atomic ratio O/Sn of films deposited at $375^{\circ}C$ for 2min changed from 1.99 to 2.45 with annealing treatment. Gas sensitivity depended on annealing temperature, the sensitivity increased with increasing annealing temperature.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.100-104
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• 2018

Herein, we present the behavior of plasma-doped graphene upon high-temperature vacuum annealing. An ammonia plasma-treated graphene sample underwent vacuum annealing for 1 h at temperatures ranging from 100 to $500^{\circ}C$. According to Raman analysis, the structural healing of the plasma-treated sample is more pronounced at elevated annealing temperatures. The crystallite size of the plasma-treated sample increases from 13.87 to 29.15 nm after vacuum annealing. In addition, the doping level by plasma treatment reaches $2.2{\times}10^{12}cm^{-2}$ and maintains a value of $1.6{\times}10^{12}cm^{-2}$, even after annealing at $500^{\circ}C$, indicating high doping stability. A relatively large decrease in the pyrrolic bonding components is observed by X-ray photoelectron spectroscopy as compared to other configurations, such as pyridinic and amino bindings, after the annealing. This study indicates that high-vacuum annealing at elevated temperatures provides a method for the structural reorganization of plasma-treated graphene without a subsequent decrease in doping level.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.692-695
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• 1999

This paper presents annealing characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere)Ar-(5-~25%)$N_2$. The physical and electrical characteristics of these films investigated with the thickness range 3500$\AA$ of CrN thin films, annealing temperature (100~30$0^{\circ}C$) and annealing time (24-72hr) . The optimized condition of CrN thin-film strain gauges were thickness range of 3500$\AA$ and annealing condition(30$0^{\circ}C$ , 48hr) in Ar-10%$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity, $\rho$=1147.65$\Omega$cm a low temperature coefficient of 11.17. And change in resistance after annealing for the CrN thin film were quitely linear and stable.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.455-459
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• 2002

I have investigated the effects of annealing on a polymeric $\alpha-C_3N_{4.2}$ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared spectroscopy, Auger electron spectroscopy and x-ray diffraction(XRD). Notably, XPS studies of the film composition before and after annealing demonstrate that the nitrogen composition in $\alpha-C_3N_{4.2}$ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~43%. XPS analysis also shows that the nitrogen composition in the annealed films without polymeric $\alpha-C_3N_{4.2}$ was reduced from 35% to 17%. Furthermore the concentration of the sp$^3$bonded phase increased with the increment of the annealing temperature.

• Journal of Biosystems Engineering
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• v.10 no.1
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• pp.76-82
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• 1985

To investigate the influence of annealing heat treatment on the mechanical properties at the various weld zone, an experimental study was performed for the structural alloy steel. The results obtained from the experimental works are as follows: 1. Hardness and tensile strength showed the highest value at the heat affected zone, which was 5mm apart from bond zone. With increasing of annealing temperature, hardness and tensile strength were decreased at every weld zone, and bound in heat affected zone was increased. 2. Impact strength was the highest at the filler metal, and increased with increment of annealing temperature at filler metal and base metal. However, both at bond and heat affected zones, impact strength was increased from $700^{\circ}C$ of annealing temperature, and was decreased again over $900^{\circ}C$. 3. Mutual relationship between the mechanical properties at filler and base metals showed a similar linearty to that the common structural steel did. However, it varied unsteadly both at bond and heat affected zones. 4. It may be concluded that proper annealing temperature is $700^{\circ}C$ from the viewpoint of hardness, tensile and impact strength.