• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.36-37
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• 2006

Titanium oxy-nitride ($TiN_O_y$) thin films were deposited on $SiO_2$/Si substrates using reactive dc magnetron sputtering, and were then annealed at various temperatures in air ambient to incorporate oxygen into the films. The effect of annealing temperature on the structural and electrical properties of the films was investigated. The grain size of the films decreases with increasing annealing temperature. On the other hand, crystallinity of the films is independent of annealing temperature in air ambient. Resistivity of the films increases remarkably as an annealing temperature increases and temperature coefficience of resistance (TCR) of the films varies from a positive value to a negative value. The films annealed at $350^{\circ}C$ for 30 min exhibited a near-zero TCR value of approximately -5 ppm/K. The decrease of the grain size with increasing annealing temperature was attributed to an increase of oxygen concentration incorporated into the films during anncaling treatment.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.2
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• pp.56-62
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• 2018

Many researchers have studied on the precipitation control after solution treatment to improve the damping capacity without decreasing the strength. However, studies on the damping capacity and microstructure changes after deformation in the solid solution strengthening alloys were inadequate, such as the Al-Zn series magnesium alloys. Therefore, in order to investigate the effect of annealing condition on microstructure change and damping a capacity of AZ61 magnesium alloy. In this study, it was confirmed that the microstructure changes affect the damping capacity and hardness when annealed AZ61 alloy. AZ61 magnesium alloy was rolled at $400^{\circ}C$ with rolling reduction of 30%. These specimens were annealed at $350^{\circ}C$ to $450^{\circ}C$ for 30-180 minutes. After annealing, microstructure was observed by using optical microscopy, and damping capacity was measured by using internal friction measurement machine. Hardness was measured by Vickers hardness tester under a condition of 0.3 N. In this study, static recrystallization was observed regardless of the annealing conditions. In addition, uniform equiaxed grain structure was developed by annealing treatment. Hardness is decreased with increasing grain size. This is associated with Hall-Petch equation and static recrystallization. In case of damping capacity, bigger grain size show the larger damping capacity.

• Progress in Superconductivity and Cryogenics
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• v.8 no.3
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• pp.5-8
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• 2006

The effect of annealing time in Metal Organic Deposition(MOD) method was investigated at reduced total pressure. As the total annealing pressure was reduced, the growth rate of YBCO films increased from 0.14nm/sec at atmospheric pressure to 4.2nm/sec at 1 Torr. For the total pres sure of 700, 500, 300, 100, and 1 Torr, the optimal annealing times of 60, 40, 20, 10, 2minutes were found in our experimental conditions. When the an nealing time was short, poor crystallinity or un-reacted phase was obtained. Also, the degradation of YBCO films occurred when exposed longer to the humid ambient at the high annealing temperature. The reduced pressure was found effective to in crease the growth rate and to control the pore size of the YBCO films in MOD method. A fast growth of MOD-YBCO films was realized with high critical current density over $1MA/cm^2$ using reduced pressure annealing. Large pores, usually observed at atmospheric pressure in MOD method, disappeared and also, the number of pores was reduced.

• Journal of the Korean Magnetics Society
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• v.2 no.2
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• pp.91-98
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• 1992

In a $Co_{67}Fe_{4.5}Nb_{2}Si_{10}B_{15}$ amorphous alloy ribbon the effect to two-step annealing on the soft magnetic properties has been studied. By two-step annealing method which the second annealing at low temperature of $310^{\circ}C$ for 2 hours is undertaken after the primary annealing at high temperature above $480^{\circ}C$ for 20 minutes at the vacuum state, the coercive force and the squareness are not changed nearly but the initial permeability at d.c. and the effective permeability at a.c. are remark-ably increased compared with the one-step annealing. The maxima of the initial permeability and the effective permeability at 1 kHz after the two-step annealing are 290,000 and 41,000, respectively, which are 30% higher than those of the one-step annealing. The change of magnetic properties with annealing temperature is discussed in terms of the residual stress, the domain size, the cluster and the crystalline phase.

• Journal of IKEEE
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• v.23 no.2
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• pp.704-709
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• 2019

In this paper, the electrical characteristics of tunneling field effect transistor(TFET) was studied for different annealing conditions. The TFET samples annealed using hydrogen forming gas(4 %) and Deuterium($D_2$) forming gas(4 %). All the measurements were conducted in noise shielded environment. The results show that subthreshold slope(SS) decreased by 33 mV/dec after annealing process compared to before annealing. Under various temperature range, the noise is improved by average of 31.2 % for 10 atm Deuterium gas at $V_G=3V$ condition. It is also noticed that, post metal annealing with $D_2$ gas reduces the noise by average of 30.7 % at $I_D=100nA$ condition.

• Journal of Magnetics
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• v.11 no.1
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• pp.55-59
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• 2006

The effect of annealing temperature on the permeability and giant magneto-impedance (GMI) behaviors of $Fe_{68.5}Mn_{5}Si_{13.5}B_9Nb_3Cu_1$ amorphous alloy has been systematically investigated. The nanocrystalline $Fe_{68.5}Mn_{5}Si_{13.5}B_9Nb_3Cu_1$ alloys consisting of ultra-fine $(Fe,Mn)_3Si$ grains embedded in an amorphous matrix were obtained by annealing their precursor alloy at the temperature range from $500^{\circ}C\;to\;600^{\circ}C$ for 1 hour in vacuum. The permeability and GMI profiles were measured as a function of external magnetic field. It was found that the increase of both the permeability and the GMI effect with increasing annealing temperature up to $535^{\circ}C$ was observed and ascribed to the ultrasoft magnetic properties in the sample, whereas an opposite tendency was found when annealed at $600^{\circ}C$ which is due to the microstructural changes caused by high-temperature annealing. The study of temperature dependence on the permeability and GMI effect showed some insights into the nature of the magnetic exchange coupling between nanocrystallized grains through the amorphous boundaries in nanocrystalline magnetic materials.

• Journal of Advanced Marine Engineering and Technology
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• v.29 no.6
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• pp.654-661
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• 2005

Copper is a well known alloying element that is used to improve the resistance to general corrosion of stainless steel And also Cu cation have the anti-fouling effect to inhibit adhesion of the marine algae and shellfish to the surface of heat exchanger cooling pipe or outside wall of the ship, Therefore there are some anti-fouling methods such as anti-fouling Paint mixed with copper oxide or MGPS(Marine Growth Preventing System) by using Cu cation dissolved to the sea wather solution. Cu cation can be dissolved spontaneously by galvanic current due to Potential difference between Cu and cooling pipe of heat exchanger with Ti material, which may be one of the anti-fouling designs. In this study the effect of annealing heat treatment to galvanic current and Polarization behavior was investigated with a electrochemical points of view such as measurement of corrosion Potential, anodic polarization curve. cyclic voltammetric curve, galvanic current etc The grain size of the surface in annealed at $700^{\circ}C$ was the smallest than that of other annealing temperatures. and also the corrosion Potential showed more positive potential than other annealing temperatures. The galvanic current between Ti and Cu with annealed at $700^{\circ}C$ was the largest value in the case of static condition. However its value in the case of flow condition was the smallest than the other temperatures. Therefore in order to increase anti-fouling effect by Cu cation, the optimum annealing temperature in static condition of sea water is $700^{\circ}C$, however non- heat treated specimen in the case of flow condition may be desirable.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1997.03a
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• pp.233-239
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• 1997

The effect of the cross-rolling on the evolution of the deformation texture and the subsequent annealing texture was studied in 5182 aluminium alloy. The orientation density near {011}<110>. The weak ${\beta}$-fiber orientations in the deformation texture lead to the randomization of the annealing texture, whereas the strong ${\beta}$-fiber orientations lead to the strong Cube orientation in the annealing texture. The development of the strong rotated Cube orientation in the annealing texture seemed to be related with the decrease in the R-value.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.367-369
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• 1988

We suggest a new annealing method for stabilization of $Si-SiO_2$ interface state in MOS device using $NH_3$(10%) + $N_2$(90%) ambient gases. The annealing effect was examined through C-V characteristics, threshold voltage, effective mobility on channel, respectively. The experimental result show that the new method is available to improvement of MOS device characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.99-102
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• 2003

Tin dioxide thin films were deposited at $375^{\circ}C$ on alumina substrate by metal-organic chemical vapor deposition process to find the relationship between physicochemical properties and the annealing treatments. The small grains with heat treatments grew to the bunch of grains and then showed the hillocks on the film surface. The thickness decreased with annealing treatment. The measured binding energy (BE) and branching ratio of the Sn 3d spin-orbital doublet were typical of oxidized states of Sn and the BE of the O1s core level of about 530~530.65eV also confirmed the presence of O-Sn bonds. The BE of oxygen and tin with annealing treatment shifted to higher position. O/Sn atomic ratios of films deposited at $375^{\circ}C$ for 2min and 4min were 1.99 and 2.01, respectively. The value of the atomic ratio O/Sn of films deposited at $375^{\circ}C$ for 2min changed from 1.99 to 2.45 with annealing treatment. Gas sensitivity depended on annealing temperature, the sensitivity increased with increasing annealing temperature.