• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.216-220
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• 2000

Photoluminescence (PL) results of $Si^+$-implanted $SiO_2$films on crystalline silicon are reported. Visible and infrared PL are observed for all the samples. The PL spectrums have about 7000 $\AA$, 7400 $\AA$ and 8400 $\AA$ peak positions. As amount of $Si^+$ ion dose changed, the PL peak positions and intensity are changed. In particular, the PL spectrum has three peaks and more intensity than the other $Si^+$ ion implantation samples for $1{\times}10^{17}/cm^2$ $Si^+$ ion implantation. Not nanocrystal but defects that $Si^+$ ions treated are contributed to the PL spectrum. For the changes of $Si^+$ ion dose and annealing time, O rich radiative defects, Si rich radiative defects, and nonradiative defects control the PL spectrum. We confirmed that more radiative defects can be created by control of $Si^+$ ion dose.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.109-109
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• 2010

$Er^{3+}$ ion shows a stable and efficient luminescence at 1.54mm due to its $^4I_{13/2}\;{\rightarrow}\;^4I_{15/2}$ intra-4f transition. As this corresponds to the low-loss window of silica-based optical fibers, Er-based light sources have become a mainstay of the long-distance telecom. In most telecom applications, $Er^{3+}$ ions are excited via resonant optical pumping. However, if nanocluster-Si (nc-Si) are co-doped with $Er^{3+}$, $Er^{3+}$ can be excited via energy transfer from excited electrical carriers in the nc-Si as well. This combines the broad, strong absorption band of nc-Si with narrow, stable emission spectra of $Er^{3+}$ to allow top-pumping with off-resonant, low-cost broadband light sources as well as electrical pumping. A widely used method to achieve nc-Si sensitization of $Er^{3+}$ is high-temperature annealing of Er-doped, non-stoichiometric amorphous thin film with excess Si (e.g.,silicon-rich silicon oxide(SRSO)) to precipitate nc-Si and optically activate $Er^{3+}$ at the same time. Unfortunately, such precipitation and growth of nc-Si into Er-doped oxide matrix can lead to $Er^{3+}$ clustering away from nc-Si at anneal temperatures much lower than ${\sim}1000^{\circ}C$ that is necessary for full optical activation of $Er^{3+}$ in $SiO_2$. Recently, silicon-rich silicon nitride (SRSN) was reported to be a promising alternative to SRSO that can overcome this problem of Er clustering. But as nc-Si formation and optical activation $Er^{3+}$ remain linked in Er-doped SRSN, it is not clear which mechanism is responsible for the observed improvement. In this paper, we report on investigating the effect of separating the nc-Si formation and $Er^{3+}$ activation by using hetero-multilayers that consist of nm-thin SRSO or SRSN sensitizing layers with Er-doped $SiO_2$ or $Si_3N_4$ luminescing layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.130.1-130.1
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• 2013

We made attempts to improve photocatalytic activity of $TiO_2$ nanoparticles under visible light exposure by combining two additional treatments. N-doping of $TiO_2$ by ammonia gas treatment at $600^{\circ}C$ increased absorbance of visible light. By coating thin film of polydimethylsiloxane (PDMS), and subsequent vacuum-annealing at $800^{\circ}C$, $TiO_2$, became more hydrophilic, thereby enhancing photocatalytic activity of $TiO_2$. Four types of $TiO_2$ samples were prepared, bare-$TiO_2$, hydrophilic-modified $TiO_2$ ($h-PDMS/TiO_2$), N-doped $TiO_2$ ($N/TiO_2$) and hydrophilic-modified and N-doped $TiO_2$ ($h-PDMS/N/TiO_2$). Adsorption capability was evaluated under dark condition and photocatalytic activity of $TiO_2$ was evaluated by photodegradation of MB under blue LED (400 nm< ${\lambda}$) irradiation. N-doping on $TiO_2$ was characterized using XPS and hydrophilic modification of $TiO_2$ surface was analyzed by FT-IR spectrometer. It was found that N-doping and hydrophilic modification both had positive effect on enhancing adsorption capability and photocatalytic activity of $TiO_2$ at the same time. Particularly, N-doping enhanced visible light absorption of $TiO_2$, whereas hydrophilic surface modification increased MB adsorption capacity. By combining these two strategies, photocatalytic acitivity under visible light irradiation became the sum of individual effects of N-doping and hydrophilic modification.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.33-36
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• 2009

Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at $100^{\circ}C$ for 10 hours. Au/inorganic-organic composite layer/$SiO_2$ structures were fabricated and the mobility, $I_{on}/I_{off}$ ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately $10^{-4}cm^2/V{\cdot}s$. However, the mobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the $I_{on}/I_{off}$ ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.

• Journal of Drive and Control
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• v.13 no.2
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• pp.34-41
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• 2016

Unlike the commonly used On/Off solenoid, constant attraction force which is independent of plunger displacement is a considerably important characteristic to proportional solenoid of the EPPR Valve. Attraction force uniformity is mainly affected by the internal shape design parameters. Due to a number of shape design parameters, the optimal parameter values are very complex and time consuming to find by trial and error method. Much research has been conducted or are still in progress to find the optimal parameter values by applying various optimization techniques like Genetic Algorithm, Evolution Strategy, Simulated Annealing, or the Taguchi method. In this paper, the design parameters which have primary effects on the attraction force uniformity and the average attraction force are decided by main effects analysis of Design of Experiments. Optimal parameter values are derived using finite-element analysis and a neural network model.

• Earthquakes and Structures
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• v.5 no.1
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• pp.83-109
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• 2013

A simple damper optimization method is proposed to find optimal damper allocation for shear buildings under both target added damping ratio and interstorey drift ratio (IDR). The damping coefficients of added dampers are considered as design variables. The cost, which is defined as the sum of damping coefficient of added dampers, is minimized under a target added damping ratio and the upper and the lower constraint of the design variables. In the first stage of proposed algorithm, Simulated Annealing, Nelder Mead and Differential Evolution numerical algorithms are used to solve the proposed optimization problem. The candidate optimal design obtained in the first stage is tested in terms of the IDRs using linear time history analyses for a design earthquake in the second stage. If all IDRs are below the allowable level, iteration of the algorithm is stopped; otherwise, the iteration continues increasing the target damping ratio. By this way, a structural response IDR is also taken into consideration using a snap-back test. In this study, the effects of the selection of upper limit for added dampers, the storey mass distribution and the storey stiffness distribution are all investigated in terms of damper distributions, cost function, added damping ratio and IDRs for 6-storey shear building models. The results of the proposed method are compared with two existing methods in the literature. Optimal designs are also compared with uniform designs according to both IDRs and added damping ratios. The numerical results show that the proposed damper optimization method is easy to apply and is efficient to find optimal damper distribution for a target damping ratio and allowable IDR value.

• Korean Journal of Metals and Materials
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• v.48 no.4
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• pp.357-362
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• 2010

Ferromagnetic Mn-Al nanoparticles were prepared using a plasma arc discharge method. The influence of the process parameters on the vaporization rate, composition, particle size, and magnetic properties of the as-produced nanoparticles was investigated. The Mn content was found to be higher in the nanoparticles than in the corresponding mother materials, although the difference diminished with the reaction time. As the $H_2$ content in the reaction gas increased, both the vaporization rate and the particle size increased. With 30 at.% Mn, the average particle diameter was 35.2 nm under a pure Ar gas condition, whereas it was 95.4 nm at a Ar:$H_2$ ratio of 60:40. With the addition of a small amount of carbon, ${\varepsilon}$-phase nanoparticles were successfully synthesized. After a heat treatment in a vacuum for 30 min at $500^{\circ}C$, the nonmagnetic ${\varepsilon}$-phase was transformed into the ferromagnetic ${\tau}$-phase, and a very high coercivity of nearly 5.6 kOe was achieved.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.321-328
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• 2011

The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (${\alpha}$-Si:H) process of $T_{s}=180^{\circ}C$ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of < $13{\Omega}$□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.9
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• pp.1193-1201
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• 2020

Cell planning, which determines the cell structure for location management of mobile terminals in mobile communications, has been dealt with as an important research task to determine network performance. Among the factors influencing the cell structure planning in mobile communication, the signal cost for location management plays the most important role. In this paper, we propose an optimization algorithm that minimizes the location management cost of all the cells used to plan the cell structure in the network with reporting cell structure in mobile communication. The proposed algorithm uses a Tabu search algorithm, which is a meta-heuristic algorithm, and the proposed algorithm proposes a new neighborhood generation method to obtain a result close to the optimal solution. In order to evaluate the performance of the proposed algorithm, the simulation was performed in terms of location management cost and algorithm execution time. The evaluation results show that the proposed algorithm outperforms the existing genetic algorithm and simulated annealing.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.106-109
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• 2022

The green-emitting Zn₂SiO₄:Mn²⁺ phosphor film was evaluated in a xenon excimer lamp. The phosphor film with 2 ㎛ thick was formed of monolithic structure on the inner side of quartz through a long-time annealing process of coated ZnO solution doped with Mn²⁺ ion and SiO₂ of quartz tube. The coated quartz was filled with 100 torr of xenon gas, and simultaneously both sides was melt and sealed. The xenon-field quartz tube was discharge by applying the voltage of 15 kV with a frequency of 26 kHz, and emitted the glow with dominant peak at 172 nm. The vacuum ultraviolet excited the inner-side coated Zn₂SiO₄:Mn²⁺ phosphor film, which emitted the pure and strong green light.