• 한국재료학회지
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• 제8권10호
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• pp.884-889
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• 1998

대면적의 비정질 실리콘 박막을 가우스 분포(Gaussian Profile)의 일차원 선형빔(line shape beam)을 가지는 엑시머 레이저를 사용하여 결정화를 시켰다. (Corning 7059 glass)위에 증착된 비정질 실리콘 박막이 재결정화된 실리콘 박막의 경우, 두께에따라 결정화되는 모양이 다르게 나타났다. 따라서 두께에 따라 결정화되는 상태의 변화를 조사하기 위하여 angle wrapping 방법을 새롭게 도입하여 깊이에 따른 Si층이 5${\mu}m$ 이상되도록 angle wrapping한 후에 박막의 두께에 따른 micro-raman spectra를 측정하여 결정화상태에 따른 잔류응력을 조사하였다. 또한 기판의 온도가 상온인 경우에 엑시머 레이저의 밀도가 300mJ/${cm}^2$에서 열처리한 경우에 재결정화된 Si 박막의 잔류응력에 박막의 표면에서 박막의 깊이에 따라 $1.3{\times}10^10$에서 $1.6{\times}10^10$을 거쳐 $1.9{\times}10^10$ dyne/${cm}^2$으로 phase의 변화에 따라 증가하였다. 또한 기판의 온도가 $400^{\circ}C$에서 최적의 열처리 에너지 밀도인 300mJ/${cm}^2$에서는 박막의 깊이에 따른 결정화 상태의변화에 따라 thermal stress 의 값이 $8.1{\times}10^9$에서 $9.0{\times}10^9$를 거쳐 $9.9{\times}10^9$ dyne/${cm}^2$으로 변화하는 것을 알 수 있다. 따라서 liquid phase에서 solid phaserk 변화함에 따라 stress값이 증가하는 것을 알 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.329-329
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• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

• 한국결정성장학회지
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• 제28권6호
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• pp.235-242
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• 2018

$Y_2O_3$를 소결조제로 사용한 질화알루미나(AlN)에 다양한 소결조건과 MgO의 도핑이 고온전기전도도의 특성에 대해 미치는 영향에 대해 연구하였다. MgO를 도핑 하였을 때, 2차상으로 스피넬과 페로브스카이트 상이 생성되었고, 이는 전기적 특성에 영향을 끼쳤다. 고온 임피던스를 분석한 결과 MgO의 도핑은 AlN 입내의 활성화 에너지와 전기전도도의 감소를 보이는 반면에, 입계의 경우에는 활성화 에너지와 전기전도도의 증가를 보였다. 이는 저항이 높은 비정질의 액상이 입계에 형성되거나, Mg의 석출에 의하여 쇼트키 장벽이 높아졌기 때문으로 예상된다. MgO가 도핑된 AlN을 어닐링 한 경우에는 어닐링 하지 않은 경우에 비하여, 활성화 에너지와 전기전도도가 더욱 증가하는 것을 볼 수 있었다. 이러한 결과는 $1500^{\circ}C$에서 어닐링을 통하여 미세구조분석에서 보이는 바와 같이 Mg 이온이 입계에서 입내로 확산된 때문으로 예상된다.

• 한국자기학회지
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• 제7권2호
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• pp.82-89
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• 1997

DC magnetron sputtering 방법에 의해 Corrnign glass위에 기저층인 Fe와 Cu의 두께를 다르게 하면서 buffer/[Co(17 .agns. )/Cu(t .angs. )]$_{N}$의 형태로 다층박막을 제작하여 자기저항비의 비자성층 Cu 층 두께, 기저층 종류와 두께, 다층박막의 층 수 의존성을 조사 하였다. 제작된 시료를 500 .deg. C 까지의 열처리를 행한 후 열처리가 이시료의 구조, 자기적 성질 및 자기저항에 미치는 여향을 조사하기 위하여 X-선 회절분석, 시료진동형자기계(VSM) 분석, 자기저항 측정을 하였다. Fe 기저층의 두께가 50 .angs. 이고 Cu 두께가 24 .angs. 일때 극대 자기저항비 21%가 관찰되었다. 낮은 base 압력 중에서 막의 증착은 산화를 억제하여 자기저항비를 증가시켰다. 400 .deg. C 까지의 시료에 대한 열처리는 다층박막의 주기성을 유지한채 더 큰 grain size를 갖게 하여 극대 자기저항비를 나타내는 Cu 두께를 갖는 시료들은 열처리 후 반강자성적으로 결합한 막의 부분이 증가함으로써 자기저항비가 증가 하다가 500 .deg. C에서는 계면의 확산에 의대 감소하였다.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• 한국산학기술학회논문지
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• 제14권2호
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• pp.846-849
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• 2013

$TiO_2$ 박막을 저온 열처리 졸-겔 법으로 합성하였다. 박막의 기판은 면적이 $100mm^2$인 붕규산염 유리를 사용하여 시료를 $300^{\circ}C$부터 $1100^{\circ}C$까지 열처리하였고, 이때 제조된 박막의 두께는 약 $1.5{\mu}m$정도였다. $300^{\circ}C$에서 2시간 동안 열처리한 $TiO_2$ 박막은 아나타제 상을 나타내었고 열처리 온도가 증가함에 따라 비정질 상태에서 아나타제상과 루타일 상이 공존하면서 각 상의 분율이 변화하였다. SEM 분석에 의하면 박막의 입자 크기는 $0.1{\sim}0.54{\mu}m$이었으며 Uv-visible 반사특성에 있어서 390nm부근에서 광흡수가 되는 것을 알 수 있었다. 따라서 낮은 열처리 온도에서 생성된 $TiO_2$ 박막은 주로 아나타제 상을 가지며 광촉매 특성을 2.4배 증가시키는 것으로 나타났다.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.133-138
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• 2017

We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.139-143
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• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.

• 전기학회논문지P
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• 제64권3호
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• pp.182-186
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• 2015

We investigated that effects of annealing ambient on the characteristics of functional nano thin film synthesized on glass substrate. The functional nano thin films were annealed by using rapid thermal annealing (RTA) equipment in vacuum, oxygen and nitrogen ambient, respectively. The hardness of the functional nano thin films were measured by a standard hardness testing method (ASTM D3363) such as a H-9H, F, HB and B-6B pencil (Mitsubishi, Japan). Also, the adhesion of the functional nano thin films were measured by a standard adhesion testing method (ASTM D3359) using scotch tape (3M, Korea). The contact angle of the functional nano thin films was measured by a contact angle analyzer (Phoenix 300 Touch, S.E.O.). The optical property of functional nano thin films was measured via UV-visible spectroscopy (S-3100, Scinco).

• 한국세라믹학회지
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• 제47권6호
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• pp.598-602
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• 2010

When metal oxides are added into crystalline glaze, colors of glaze and crystals are similar as colorants generally. But the case of NiO in zinc crystalline glaze is different from general color development. When NiO is added to zinc crystalline glaze it can develop two or three colors. The active use of color development mechanism by adding NiO to the zinc crystalline glaze to control color of the base glaze and crystal with stability is investigated. This report is expected to contribute to the ceramic industry in improving application of zinc crystalline glaze. For the experiment of NiO, the quantity of NiO additives is changed to the base glaze for the most adequate formation of willemite crystal from previous research and firing condition: temperature increasing speed $5^{\circ}C/min$, holding 1 h at $1270^{\circ}C$, annealing speed $3^{\circ}C/min$ till $1170^{\circ}C$, holding 2 h at $1170^{\circ}C$ then naturally annealed. The samples are characterized by X-ray diffraction (XRD), UV-vis, and Micro-Raman. The result of the procedure as follows; Ni substitutes for Zn ion then glaze develops blue willemite crystals, as if cobalt is used, on brown glaze base. When NiO quantity is increased to over 5 wt%, willemite size is decreased, and the density of the crystal is increased, at the same time $Ni_2SiO_4$ (olivine) phase, the second phase, has been developed. The excessive NiO is reacted with silicate in the glass then developed green $Ni_2SiO_4$ (olivine), and quantity of $Ni_2SiO_4$ (olivine) is increased as quantity of willemite is decreased. It is proved to create three colors, blue, brown and green by controlling the quantity of NiO to the zinc crystalline glaze and it will improve the multiple use of colors to the ceramic design.