• 제목/요약/키워드: Anisotropic wet etching

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마이크로 고체 추진제 추력기 요소의 가공 방법 및 성능 평가 (Fabrication method and performance evaluation of components of micro solid propellant thruster)

  • 이종광;박종익;권세진
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2007년도 제29회 추계학술대회논문집
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    • pp.225-228
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    • 2007
  • 마이크로 고체 추진제 추력기는 현재의 MEMS 기술로 가장 실현 가능성이 높은 마이크로 추력기이다. 마이크로 고체 추진제 추력기의 기본 요소로는 마이크로 노즐, 마이크로 점화기, 연소 챔버 그리고 고체 추진제이다. 마이크로 노즐과 연소 챔버는 감광유리의 이방성 식각을 통해 제작이 되었다. 마이크로 점화기는 마이크로 유리 박막 백금 히터를 사용하였다. 요소들의 제작 공정을 확립 후, 요소들을 통합하여 추력기를 개발하였다. 추력기의 연소 실험을 수행하여 성공적으로 연소가 일어남을 확인하였다.

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감광유리를 이용한 MEMS 촉매 연소기의 제작 및 성능 평가 (Fabrication and Performance Test of MEMS Catalytic Combustors Using Photosensitive Glass Wafer)

  • 진정근;권세진
    • 대한기계학회논문집A
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    • 제33권3호
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    • pp.237-242
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    • 2009
  • MEMS catalytic combustors were fabricated to use in micro-power sources as a heat source. The combustor was fabricated by photolithography and anisotropic wet etching of photosensitive glass wafers. Two different catalyst loading methods were used to complete the fabrication of the combustors. For thin film type, the $Al_2O_3$ was washcoated on the surface of the combustion chamber as a catalyst support, and for packed-bed type, ceramic foam was inserted after Pt was coated. The volume of the combustors was 1.8 $cm^3$ and 16W of heat was generated using the fabricated combustors with hydrogen. The energy density of combustor was about 8.9 W/$cm^3$.

실리콘 저항형 압력센서의 온도 보상에 관한 연구 (A Study on Temperature Compensation of Silicon Piezoresistive Pressure Sensor)

  • 최시영;박상준;김우정;정광화;김국진
    • 대한전자공학회논문지
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    • 제27권4호
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    • pp.563-570
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    • 1990
  • A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30\ulcorner thickness were obtained using anisotropic wet chemical etching technique. Our device showed strong temperature dependence. Compensation networks are used to compensate for the temperature dependence of the pressure sensor. The bridge supply voltage having positive temperature coefficient by compensation networks was utilized against the negative temperature coefficient of bridge output voltage. The sensitivity fluctuation of pressure sensor before temperature compensation was -1700 ppm/\ulcorner, while it reduced to -710ppm\ulcorner with temperature compensation. Our result shows that the we could develop accurate and reliable pressure sensor over a wide temperature range(-20\ulcorner~50\ulcorner).

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Fabrication of low-stress silicon nitride film for application to biochemical sensor array

  • 손영수
    • 센서학회지
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    • 제14권5호
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    • pp.357-361
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    • 2005
  • Low-stress silicon nitride (LSN) thin films with embedded metal line have been developed as free standing structures to keep microspheres in proper locations and localized heat source for application to a chip-based sensor array for the simultaneous and near-real-time detection of multiple analytes in solution. The LSN film has been utilized as a structural material as well as a hard mask layer for wet anisotropic etching of silicon. The LSN was deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process by varing the ratio of source gas flows. The residual stress of the LSN film was measured by laser curvature method. The residual stress of the LSN film is 6 times lower than that of the stoichiometric silicon nitride film. The test results showed that not only the LSN film but also the stack of LSN layers with embedded metal line could stand without notable deflection.

MEMS기반 에너지 하베스터 제작을 위한 실리콘 KOH 식각 모형화 (Modeling of Silicon Etch in KOH for MEMS Based Energy Harvester Fabrication)

  • 민철홍;강경우;김태선
    • 한국전기전자재료학회논문지
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    • 제25권3호
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    • pp.176-181
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    • 2012
  • Due to the high etch rate and low fabrication cost, the wet etching of silicon using KOH etchant is widely used in MEMS fabrication area. However, anisotropic etch characteristic obstruct intuitional mask design and compensation structures are required for mask design level. Therefore, the accurate modeling for various types of silicon surface is essential for fabrication of three-dimensional MEMS structure. In this paper, we modeled KOH etch profile for MEMS based energy harvester using fuzzy logic. Modeling results are compared with experimental results and it is applied to design of compensation structure for MEMS based energy harvester. Through Fuzzy inference approaches, developed model showed good agreement with the experimental results with limited etch rate information.

MEMS 추력기를 위한 마이크로 점화기의 제작 방법 및 성능 평가 (Fabrication Method and Performance Evaluation of Micro Igniter for MEMS Thruster)

  • 이종광
    • 한국추진공학회지
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    • 제19권1호
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    • pp.1-8
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    • 2015
  • MEMS 추력기를 위한 유리 박막 마이크로 점화기를 개발하였다. 수십 마이크로 미터의 두께를 가지는 유리 박막을 사용하여 점화기의 구조적 안정성을 향상시켰다. 마이크로 점화기는 박막 형성을 위한 감광 유리의 이방성 식각과 점화 코일 형성을 위한 Pt/Ti 증착 공정으로 제작되었다. 개발된 점화기는 유리 박막의 구조적 안정성으로 인하여 특별한 장치없이 추진제 충전이 가능하였다. 점화 실험이 성공적으로 이뤄졌으며 최소 점화 지연은 27.5 ms, 최소 점화 에너지는 19.3 mJ 이였다.

마이크로 연료 전지를 위한 유리 바이폴라 플레이트의 제작 방법 및 성능 평가 (Fabrication and Testing of Glass Bipolar Plates for Application on Micro PEM Fuel Cells)

  • 장보선;이종광;권세진
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2009년도 제33회 추계학술대회논문집
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    • pp.289-292
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    • 2009
  • 본 연구에서는 감광유리를 이용한 PEM 마이크로 연료전지 바이폴라 플레이트의 제작 공정을 확립하고 성능 측정을 수행하였다. 감광유리는 무게가 가볍고 내화학성이 뛰어나며 제작이 용이하다. 비등방성 식각, 열 및 UV 접합, 그리고 금속 층 적층을 통한 MEMS 제작 공정이 확립되었다. 성능 측정 결과 활성화 영역에 은이 적층된 마이크로 연료전지의 성능이 그렇지 않은 것보다 우수하였으며 두 경우에서 측정된 마이크로 연료전지의 성능은 모두 국내외 마이크로 연료전지 연구 수준과 동등한 수준이었다.

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Development of High-Quality LTCC Solenoid Inductor using Solder ball and Air Cavity for 3-D SiP

  • Bae, Hyun-Cheol;Choi, Kwang-Seong;Eom, Yong-Sung;Kim, Sung-Chan;Lee, Jong-Hyun;Moon, Jong-Tae
    • 마이크로전자및패키징학회지
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    • 제16권4호
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    • pp.5-8
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    • 2009
  • In this paper, a high-quality low-temperature co-fired ceramic (LTCC) solenoid inductor using a solder ball and an air cavity on a silicon wafer for three-dimensional (3-D) system-in-package (SiP) is proposed. The LTCC multi-layer solenoid inductor is attached using Ag paste and solder ball on a silicon wafer with the air cavity structure. The air cavity is formed on a silicon wafer through an anisotropic wet-etching technology and is able to isolate the LTCC dielectric loss which is equivalent to a low k material effect. The electrical coupling between the metal layer and the LTCC dielectric layer is decreased by adopting the air cavity. The LTCC solenoid inductor using the solder ball and the air cavity on silicon wafer has an improved Q factor and self-resonant frequency (SRF) by reducing the LTCC dielectric resistance and parasitic capacitance. Also, 3-D device stacking technologies provide an effective path to the miniaturization of electronic systems.

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재순환 영역이 존재하는 마이크로 혼합기 (A Micro Mixer with Recirculation Zones)

  • 이종광;김용대;최재훈;권세진
    • 대한기계학회논문집A
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    • 제30권12호
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    • pp.1642-1648
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    • 2006
  • This paper describes enhancement of the mixing efficiency of a multilamination micro mixer by adding a number of recirculation zones downstream of the mixing zone. Numerical simulation was employed to estimate the mixing efficiency and the pressure drop under various conditions. Numerical results indicated that recirculation micro mixer brought about not only the increase of the mixing efficiency but also the decrease of the pressure drop. Micro mixers were fabricated using photosensitive glass by anisotropic wet etching technique. The width and height of the micro channel were $150{\mu}m$ and $500{\mu}m$, respectively. The performance of micro mixer was measured using color intensity variation of the fluid. Except for extremely low Re below 40, the recirculation micro mixer of the present study showed improved mixing. And the enhancement of the mixing increased as Re rose. When Re increased beyond 400, more than 90% of the mixing was observed in the experiment.

Top-down 방식으로 제작한 실리콘 나노와이어 ISFET 의 전기적 특성 (A Study on the Electrical Characterization of Top-down Fabricated Si Nanowire ISFET)

  • 김성만;조영학;이준형;노지형;이대성
    • 한국정밀공학회지
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    • 제30권1호
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    • pp.128-133
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    • 2013
  • Si Nanowire (Si-NW) arrays were fabricated by top-down method. A relatively simple method is suggested to fabricate suspended silicon nanowire arrays. This method allows for the production of suspended silicon nanowire arrays using anisotropic wet etching and conventional MEMS method of SOI (Silicon-On-Insulator) wafer. The dimensions of the fabricated nanowire arrays with the proposed method were evaluated and their effects on the Field Effect Transistor (FET) characteristics were discussed. Current-voltage (I-V) characteristics of the device with nanowire arrays were measured using a probe station and a semiconductor analyzer. The electrical properties of the device were characterized through leakage current, dielectric property, and threshold voltage. The results implied that the electrical characteristics of the fabricated device show the potential of being ion-selective field effect transistors (ISFETs) sensors.