• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.66-67
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• 2009

• Bulletin of the Korean Chemical Society
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• v.31 no.4
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• pp.989-998
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• 2010

The titled dye of DBPI gives amplified spontaneous emission (ASE) with maximum at 580 nm upon pumping by nitrogen laser (${\lambda}_{ex}\;=\;337.1\;nm$). The ground state absorption cross section (${\sigma}_A$) and emission cross section (${\sigma}_E$) as well as effective emission cross section(${\sigma}^*_E$) have been determined. The electronic absorption spectra of DBPI were measured in ethanol and tetrahydrofuran at room and low temperature. DBPI displays molecular aggregation in water. The photochemical reactivity of DBPI was also studied in carbon tetrachloride upon irradiation with 525 nm light. The electrochemical investigation of DBPI dye has been carried out using cyclic voltammetry and convolution deconvolution voltammetry combined with digital simulation technique at a platinum electrode in 0.1 mol/L tetrabutyl ammonium perchlorate (TBAP) in two different solvents acetonitrile ($CH_3CN$) and dimethylformamide (DMF). The species were reduced via consumption of two sequential electrons to form radical anion and dianion (EE mechanism). In switching the potential to positive direction, the compound was oxidized by loss of two sequential electrons, which were followed by a fast dimerization and/or aggregation process i.e $EC_{dim1}EC_{dim2}$ mechanism. The electrode reaction pathway and the chemical and electrochemical parameters of the investigated compound were determined using cyclic and convolutive voltammetry. The extracted electrochemical parameters were verified and confirmed via digital simulation method.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.5-6
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• 1989

The overall design of the optical isolator system is prepared for the 1 TW Nd pulse laser. Two pockels cell optical switches are employed to suppress the amplified spontaneous emission and the backward reflection. The role of two Farady rotators is to protect the laser system from the light amplified after back reflection. One saturable absorber dye and one liquid crystal polarizer/isolator will also serve as optical isolator.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.41-42
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• 2007

• Korean Journal of Optics and Photonics
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• v.23 no.6
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• pp.264-268
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• 2012

In this paper, we propose a new method for broadcasting in a WDM-PON system which has the merits of a simple and cost effective structure. It can be constructed using only an ASE (Amplified Spontaneous Emission) light source and a PI-RSOA (Polarization Independent - Reflective Semiconductor Optical Amplifier). Error-free broadcast signal transmission over 30 Km for 24 channels at 1.25 Gb/s has been successfully demonstrated.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.96-97
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• 2000

Incoherent broadband optical sources have been applied in various areas such as a light source for optical device characterization, fiber-optic gyroscopes$^{(1)}$ , and spectrum sliced light source in wavelength division multiplexing (WDM) system$^{(2)}$ . To utilize the inherent low loss in silica optical fibers, various types of incoherent light sources are being developed. Among the light sources, the amplified spontaneous emission (ASE) from a rare earth doped fiber has benefits in temperature stability, high output power, low polarization dependence over semiconductor diodes$^{(3)}$ . Recently erbium doped fibers (EDF) have been intensively researched for ASE sources as well as optical amplifiers$^{(4)}$ . The spectrum of ASE from an EDF, however, is limited in the 1520~1560 nm range in conventional configurations. In this letter we described a new broadband ASE source which included both the conventional ASE band of Er$^{3+}$ ion, 1520nm~1560nm and ASE band from Tm$^{3+}$ ions that extends the bandwidth further. For the first time, to the best knowledge of authors, a fiber ASE source based on the energy transfer between Er$^{3+}$ and Tm$^{3+}$ ions in the range of 1460~1550 nm, has been demonstrated using a single 980nm pump laser diode. (omitted)omitted)

• Journal of the Optical Society of Korea
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• v.19 no.5
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• pp.437-443
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• 2015

In this paper, we analyze the performance of the all-optical multihop radio over a free space optical (RoFSO) communication system with amplify-and-forward (AF) relays under varying weather conditions. The proposed channel model considers the propagation loss, attenuation and atmospheric fading modeled by the Gamma-Gamma (GG) distribution. Both the amplified spontaneous emission (ASE) noise in the all-optical relays and the background noise projected onto receiver apertures have been considered in the analysis. The lower bound analytical expressions for the end-to-end bit error rate (BER) and outage probability are derived for the multihop system employing the all-optical relays with the full channel state information (CSI). Meanwhile, the exact results for BER and outage probability are obtained via Monte Carlo simulation. Results indicate the performance of the proposed system will be improved by the multihop transmission technology. For a fixed number of relays, the BER and outage probability will be increased with the deterioration of the weather conditions.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.9B
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• pp.1518-1526
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• 2000

This paper proposes an optical transmission link design method based on an optimum compensation scheme using dispersion compensating fiber (DCF), so that high-speed long-distance optical transmission would be possible over the conventional standard single mode fiber (SMF) link. The proposed design method provides the maximized transmission distances according to the signal speeds, where the amplifier spacing and repeater spacing are optimized wit respect to self-phase modulation(SPM) due to fiber nonlinearity and amplified spontaneous emission (ASE) noises caused by optical amplifies. It is also shown that there exists an optimum input signal power range balancing the effects of ASE noise and SPM for the given amplifier spacing and repeater spacing.

• Current Applied Physics
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• v.18 no.11
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• pp.1381-1387
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• 2018

One dimensional (1D) grating has been fabricated (using focused ion beam) on 50 nm gold (Au) film deposited on higher refractive index Gallium phosphate (GaP) substrate. The sub-wavelength periodic metal nano structuring enable to couple photon to couple with the surface plasmons (SPs) excited by them. These grating devices provide the efficient control on the SPs which propagate on the interface of noble metal and dielectric whose frequency is dependent on the bulk electron plasma frequency of the metal. For a fixed periodicity (${\Lambda}=700 nm$) and slit width (w = 100 nm) in the grating device, the efficiency of SPP excitation is about 40% compared to the transmission in the near-field. Efficient coupling of SPs with photon in dielectric provide field localisation on sub-wavelength scale which is needed in Heat Assisted Magnetic recording (HAMR) systems. The GaP is also used to emulate Vertical Cavity Surface emitting laser (VCSEL) in order to provide cheaper alternative of light source being used in HAMR technology. In order to understand the underlying physics, far-and near-field results has been compared with the modelling results which are obtained using COMSOL RF module. Apart from this, grating devices of smaller periodicity (${\Lambda}=280nm$) and slit width (w = 22 nm) has been fabricated on GaP substrate which is photoluminescence material to observe amplified spontaneous emission of the SPs at wavelength of 805 nm when the grating device was excited with 532 nm laser light. This observation is unique and can have direct application in light emitting diodes (LEDs).

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.