• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.3
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• pp.107-112
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• 2003

Amorphous carbon nitride thin films have been deposited on silicon (100) by reactive magnetron sputtering method. The basic depositon parameters varied were the r.f. power(up to 250 W), the deposition pressure in the reactor(up to 100 mtorr) and Ar:$N_2$ gas ratio. FT-IR and X-ray photoelectron spectra showed the presence of different carbon-nitrogen bonds in the films. The surface topography of the films was studied by scanning electron microscopy(SEM) and atomic force microscopy(AFM).

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.9
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• pp.1060-1067
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• 1988

In this paper, we have investigated the effects of rapid thermal process on the electrical and structural properties of silicon films. It was shown that required times and temperature for the successful activation of dopants (Boron, Phosphorus:5E15atoms/cm\ulcorner were above 1000\ulcorner, 10sec, respectively. The typical resistivities of films deposited below 600\ulcorner were in the range of 1.0 E-3ohm-cm which was 20-30% lower than that of initially polycrystalline silicon depositd above 600\ulcorner. After rapid thermal process at high temperature above 1000\ulcorner, the films did not reveal any change in resistivity due to the dopant segregation, and better electrical conductivity could be obtained by increasing the process time. The grain growth by RTA treatment was more salient in the case of the doped amorphous than that of initially polycrystalline. The surface of the films also preserved the higher structural perfection and surface smoothness.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.123-123
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• 1999

Amorphous hydrogenated silicon carbide (a-SiC:H) films were deposited at the temperature of 40$0^{\circ}C$ using plasma enhanced chemical vapor deposition. The a-SiC:H films were characterized by x-ray photoelectron spectroscopy (XPS) and nanoindentation method. By increasing the plasma power from 20W to 160W, the oxygen content of the a-SiC:H films were observed to decrease from 12.1% to 4.4%. On the other hand, the plasma power did not affect the ratio of carbon to silicon in our experiment where the 1, 3-disilabutane was used as the precursor. Microhardness of the films was observed to increase as the plasma power increased, while the elastic modulus was observed to gave a maximum value at the plasma power of 80W. Microhardness of the film is thought to be strongly affected by the content of adventitious oxygen in the film and it is concluded that the hardness of the film can be improved by increasing the plasma power.

• New & Renewable Energy
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• v.4 no.2
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• pp.68-73
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• 2008

It is very important that constitution of good hetero-junction interface with a high quality amorphous silicon thin films on very cleaned c-Si wafer for making high efficiency hetero-junction solar cells. For achieving the high efficiency solar cells, the inspection and management of c-Si wafer surface conditions are essential subjects. In this experiment, we analyzed the c-Si wafer surface very sensitively using Spectroscopic Ellipsometer for < ${\varepsilon}2$ > and u-PCD for effective carrier life time, so we accomplished < ${\varepsilon}2$ > value 43.02 at 4.25eV by optimizing the cleaning process which is representative of c-Si wafer surface conditions very well. We carried out that the deposition of high quality hydrogenated silicon amorphous thin films by RF-PECVD systems having high density and low crystallinity which are results of effective medium approximation modeling and fitting using spectroscopic ellipsometer. We reached the cell efficiency 12.67% and 14.30% on flat and textured CZ c-Si wafer each under AM1.5G irradiation, adopting the optimized cleaning and deposition conditions that we made. As a result, we confirmed that spectroscopic ellipsometry is very useful analyzing methode for hetero-junction solar cells which need to very thin and high quality multi layer structure.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.4
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• pp.506-514
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• 1986

Experimental results are reported concerning temperture effects from room temperature to 100\ulcorner on the optical properties of N-and P-type hydrogenated amorphous silicon films prepared by RF glow discharege. Optical absorption coefficient and optical bandgap have been measured and analyzed as a function of temperature. Optical absorption coefficient increase monotonically with temperature, while the optical bandgape of doped amorphous silicons decrease linearly by about 4-7x10**-4 [ev/k].

• ETRI Journal
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• v.26 no.3
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• pp.257-261
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• 2004

We grew amorphous SiCN films by pulsed laser deposition using mixed targets. The targets were fabricated by compacting a mixture of SiC and $SiC-{Si_3}{N_4}$ powders. We controlled the film stoichiometry by varying the mixing ratio of the target and the target-to-substrate distance. The mixing ratio of the target had a dominant effect on the film composition. We consider the structures of the SiCN films deposited using 30~70 wt.% SiC in the target to be an intermediate phase of SiC and $SiN_x$. This provides the possibility of growing homogeneous SiCN films with a mixed target at a moderate target-to-substrate distance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.278-282
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• 2004

The Hydrogenated amorphous carbon(a-C:H) thin films are deposited on silicon with a close field unbalanced magnetron(CFUBM) sputtering systems. The experimental data are obtained on the depositon rate and physical properties of a-C:H films using DC bias voltage and Ar/C$_2$H$_2$ pressure. The depostion rate and the surface roughness decrease with DC bias voltage, but the hardness of the thin films increases with DC bias voltage. And the position of G-peak moves to lower wavenumber indicating an increase in diamond-like carbon characteristics with the lower Ar/C$_2$H$_2$ pressure.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.109-115
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• 2003

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti, Al, Si)N crystallites and amorphous Si3N4 by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film haying the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of nc-(Ti,Al,Si) N/a$-Si_3$$N_4$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.748-752
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• 2004

The Hydrogenated amorphous carbon (a-C:H) thin films are deposited to fabricate suppored layer on silicon substrate with a closed field unbalanced magnetron(CFUBM) sputtering system. This study focuses on the characteristic of Diamond like carbon (DLC) films and Pb(Zr,Ti)$O_3$ (PZT) films for membrane structure. The deposition rate and the surface roughness of DLC fims decrease with DC bias voltage. hardness is 26 GPa at -200 V. Interface of DLC/Si and Pt/DLC layers was excellent.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.556-562
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• 1996

Carbon nitride (CN) films were synthesized on silicon substrates by a combined ion-beam and laser-ablation method under various conditions; ion-beam energy and ion-beam current were varied. Raman spectroscopy and spectroscopic ellipsometry (SE) were employed to characterize respectively the structural and the optical properties of the CN films. Raman spectra show that all the CN films are amorphous independent of the ion-beam current and the ion-beam energy. Refractive indices, extinction coefficients and optical band gaps which were determined from the measured SE spectra exhibit a significant dependence on the synthesis conditions. Especially, the decrease of the refractive indices and the shrinkage of the optical band gap is noticeable as the ion-beam current and/or the ion-beam energy increase.