• 공업화학
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• 제19권3호
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• pp.322-325
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• 2008

3,3-Dimethyl-1-butene ($C_6H_{12}$) 모노머를 PECVD 증착하였다. 비정질 탄소막은 FT-IR 스펙트럼에서 R.F.전력/압력비가 증가할수록 수소의 함유량과 dangling bond가 감소되고 막의 기계적 특성은 밀도가 상승함으로써 비례하여 향상되었다. 또한 Raman 스펙트럼에서 D 피크가 증가하였고 고리구조의 막을 형성하였다. 따라서 경도와 모듈러스가 각각 12 GPa과 85 GPa였다. 증착된 막의 굴절률(n)과 흡광계수(k)는 전력/압력비가 상승할수록 증가하였다.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.278-282
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• 2004

The Hydrogenated amorphous carbon(a-C:H) thin films are deposited on silicon with a close field unbalanced magnetron(CFUBM) sputtering systems. The experimental data are obtained on the depositon rate and physical properties of a-C:H films using DC bias voltage and Ar/C$_2$H$_2$ pressure. The depostion rate and the surface roughness decrease with DC bias voltage, but the hardness of the thin films increases with DC bias voltage. And the position of G-peak moves to lower wavenumber indicating an increase in diamond-like carbon characteristics with the lower Ar/C$_2$H$_2$ pressure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.147-150
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• 2002

The electron field emission properties of amorphous carbon (a-C) films deposited using a RF magnetron sputtering system have been improved by introducing a simple method of argon plasma treatment at room temperature. Surface morphologies and structural properties of the a-C films were investigated by scanning electron microscopy and Raman spectroscope, respectively. Structural properties and surface morphologies of the a-C films were changed by argon plasma treatment. The emission properties improved with the plasma treatment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.748-752
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• 2004

The Hydrogenated amorphous carbon (a-C:H) thin films are deposited to fabricate suppored layer on silicon substrate with a closed field unbalanced magnetron(CFUBM) sputtering system. This study focuses on the characteristic of Diamond like carbon (DLC) films and Pb(Zr,Ti)$O_3$ (PZT) films for membrane structure. The deposition rate and the surface roughness of DLC fims decrease with DC bias voltage. hardness is 26 GPa at -200 V. Interface of DLC/Si and Pt/DLC layers was excellent.

• 한국진공학회지
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• 제16권2호
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• pp.122-127
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• 2007

본 연구에서는 비정질 탄소박막들(a-C, a-C:H, a-C:N)을 흑연타겟이 부착되어진 비대칭 마그네트론 스퍼터링법을 이용하여 증착하였으며, 음의 DC 바이어스 전압의 효과를 알아보기 위해 증착가스 압력내에서 200 V를 인가하여 탄소박막들을 제작하였다. 수소화된 비정질 탄소박막과 질화탄소박막은 각각 스퍼터링 가스로써 아세틸렌과 질소를 주입하여 제작하였다. 결과적으로 26.5 GPa의 높은경도와 0.1 nm의 낮은 거칠기 그리고 접착력은 30.5 N를 가지는 수소화된 비정질 탄소박막을 합성하였으며, 32 N의 좋은 접착 특성을 나타내는 질화 탄소 박막을 합성하였다. 본 논문에서는 아세틸렌과 질소 가스의 효과와 음의 DC 바이어스 전압에 따른 비정질 탄소박막들의 구조적 특성과 물리적 특성과의 관계를 규명하였다.

• 한국주조공학회지
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• 제34권3호
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• pp.94-99
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• 2014

A commercially used Zr-based amorphous alloy was recycled and the effects of introducing carbon during recycling on the glass forming ability and mechanical properties of the alloy were investigated. The initial carbon content used in this study was 229ppm. The carbon content was gradually increased as the number of recycling iterations was increased and after the $4^{th}$ recycling it rapidly increased. As return scrap was recycled, polygonal particles precipitated, and they were identified as ZrC. The amount of the precipitates also increased with recycling. Tg, Tx and ${\Delta}T$ of the base alloy were 615 K, 696 K and 81 Kr respectively and they changed to 634 K, 706 K and 72 K after the $10^{th}$ recycling. The decrease of the ${\Delta}T$ value indicates deterioration of the glass forming ability. Hardness was not changed during three iterations of recycling but after the $4^{th}$ recycling it significantly increased. This is ascribed to an increase of amount of the hard particles, namely ZrC.

• 전기학회논문지P
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• 제52권3호
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• pp.107-112
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• 2003

Amorphous carbon nitride thin films have been deposited on silicon (100) by reactive magnetron sputtering method. The basic depositon parameters varied were the r.f. power(up to 250 W), the deposition pressure in the reactor(up to 100 mtorr) and Ar:$N_2$ gas ratio. FT-IR and X-ray photoelectron spectra showed the presence of different carbon-nitrogen bonds in the films. The surface topography of the films was studied by scanning electron microscopy(SEM) and atomic force microscopy(AFM).

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 춘계학술발표회
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• pp.85-85
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• 1996

• 한국표면공학회지
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• 제54권2호
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• pp.53-61
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• 2021

The properties of tetrahedral amorphous Carbon (ta-C) film can be determined by multiple parameters and comprehensive effects of those parameters during a deposition process with filtered cathodic vacuum arc (FCVA). In this study, Taguchi method was adopted to design the optimized FCVA deposition process of ta-C for improving deposition efficiency and mechanical properties of the deposited ta-C thin film. The influence and contribution of variables, such as arc current, substrate bias voltage, frequency, and duty cycle, on the properties of ta-C were investigated in terms of deposition efficiency and mechanical properties. It was revealed that the deposition rate was linearly increased following the increasing arc current (around 10 nm/min @ 60 A and 17 nm/min @ 100A). The hardness and I_D/I_G showed a correlation with substrate bias voltage (over 30 GPa @ 50 V and under 30 GPa @ 250 V). The scratch tests were conducted to specify the effect of each parameter on the resistance to plastic deformation of films. The analysis on variances showed that the arc current and substrate bias voltage were the most effective controlling parameters influencing properties of ta-C films. The optimized parameters were extracted for the target applications in various industrial fields.

• 열처리공학회지
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• 제25권1호
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• pp.1-5
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• 2012

The purpose of this study is to prepare a high strength fiberglass reinforced metal. Aluminum covering was carried out over carbon materials such as carbon fiber in order to increase their wettability to molten metals such as aluminum. A sputtering apparatus with a cylindrical target was fabricated to carry out the covering. Sputtering was caused by glow discharge between the target and the two anode plates attached to its top and bottom. As the substrate for preliminary test, a thin carbon wire was used instead of carbon fiber, and the wire was placed at the central axis of the target. Aluminium coating was formed on the whole surface of the substrate. The formation rate and structure of coating were varied by controlling the electrical potential of substrate. When the substrate was electrically isolated, coating with columnar structure was formed with a formation rate of $15{\mu}m/hr$. In case of grounded substrate, coating with amorphous structure was formed with a formation rate of $7{\mu}m/hr$.