• Journal of the Korean Solar Energy Society
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• v.31 no.1
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• pp.93-99
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• 2011

To guarantee more exact maximum power of solar cell module, it is absolutely required to have performance characteristics of various solar cells. Today, there are many types of solar simulator for large area measurement. But it is very opaque how to select the best one for various solar cell module like crystalline silicon solar cell, high efficiency solar cell, amorphous silicon thin film solar cell, CdTe and CIGS solar cell module. So, in this paper 4 types of photovoltaic module were selected to compare the electrical characteristics by changing light pulse duration time and voltage scan direction. Light pulse duration time was varied from 10msec to 800msec. And two types of voltage scan directions, Voc->Isc and Isc->Voc were selected. From this results, optimum measuring condition was suggested and electrical variation was analysed for each types of solar cell module. The detail description is specified as the following paper.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.254-261
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• 2010

Polycrystalline silicon (pc-Si) films are fabricated and characterized for application to pc-Si thin film solar cells as a seed layer. The amorphous silicon films are crystallized by the aluminum-induced layer exchange (ALILE) process with a structure of glass/Al/$Al_2O_3$/a-Si using various thicknesses of $Al_2O_3$ layers. In order to investigate the effects of the oxide layer on the crystallization of the amorphous silicon films, such as the crystalline film detects and the crystal grain size, the $Al_2O_3$ layer thickness arc varied from native oxide to 50 nm. As the results, the defects of the poly crystalline films are increased with the increase of $Al_2O_3$ layer thickness, whereas the grain size and crystallinity are decreased. In this experiments, obtained the average pc-Si sub-grain size was about $10\;{\mu}m$ at relatively thin $Al_2O_3$ layer thickness (${\leq}$ 16 nm). The preferential orientation of pc-Si sub-grain was <111>.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.280-283
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• 2007

The first grid-connected, building-integrated transparent amorphous silicon photovoltaic installation has been operated since October 2004 in Yongin, Korea. The 2.2kWp transparent PV system was applied to the facade of entrance hall in newly constructed KOLON E&C R&D building. The PV module is a nominal 0.98m ${\times}$ 0.95m, 10% transparent, laminated, amorphous(a-Si) thin-film device rated at 44 Wp per module. To demonstrate the architectural features of thin film PV technologies for daylighting application, transparent PV modules are attached to the building envelope with the form of single glazed window and special point glazing(SPG) frames. Besides power generation, the 10% transmittance of a-Si PV module provides very smooth natural daylight to the entrance hall without any special shading devices for whole year. The installation is fully instrumented and is continuously monitored in order to allow the performance assessment of amorphous silicon PV operating at the prevailing conditions. This paper presents measured power performance data from the first 12 months of operation. For the first year, annual average system specific yield was just 486.4kWh/kWp/year which is almost half of typical amorphous silicon PV output under the best angle and orientation. It should be caused by building orientation and self-shading of adjacent mass. Besides annual power output, various statistical analysis was performed to identify the characteristics of transparent thin film PV system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.208-208
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• 2010

Indium zinc tin oxide (IZTO) thin films were studied as a possible alternative to indium tin oxide (ITO) films for providing low-cost transparent conducting oxide (TCO) for thin film photovoltaic devices. IZTO films were deposited onto glass substrates at room temperature. A dc/rf magnetron co-sputtering system equipped with a ceramic target of the same composition was used to deposit TCO films. Earlier studies showed that the resistivity value of $In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20) films could be lowered to approximately $6{\times}10^{-4}ohm{\cdot}cm$ without sacrificing optical transparency and still maintaining amorphous structure through the optimization of process variables. The growth rate was kept at about 8 nm/min while the oxygen-to-argon pressure ratio varied from 0% to 7.5%. As-deposited films were always amorphous and showed strong oxygen pressure dependence of electrical resistivity and electron concentration values. Influence of forming gas anneal (FGA) at medium temperatures was also studied and proven effective in improving electrical properties. In this study, the chemical composition of the targets and the films varied around the $In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20). It was the main objective of this paper to investigate how off-stoichiometry affected TCO characteristics including electrical resistivity and optical transmission. In addition to the composition effect, we have also studied how film properties changed with processing variables. IZTO thin films have shown their potential as a possible alternative to ITO thin films, in such way that they could be adopted in some applications where currently ITO and IZO thin films are being used. Our experimental results are compared to those obtained for commercial ITO thin films from solar cell application view point.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.52.2-52.2
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• 2009

Si 박막형 solar cell은 Si 결정형 solar cell대비 cost 및 대면적화 측면에서 장점을 가지고 있다. 그러나 amorphous Si의 경우 light soacking에 의한 열화 문제가 있고, microcrystalline Si의 경우 요구되는 효율 확보를 위하여 $1.5{\mu}m$ 이상 두께가 필요하며, 증착율이 $5{\AA}/sec$.이하인 단점이 있다. 본 연구에서는 high deposition rate로 microcrystalline Si를 증착하기 위하여 high frequency, high power PECVD를 이용하였으며, RF power, 증착온도, H2/SiH4 ratio의 3인자를 3수준으로 변화시킨 완전요인배치 실험을 실시하였다. 실험결과 증착율은 $8.0{\AA}/sec.{\sim}52.8{\AA}/sec$ 범위, crystalline fraction은 0%~83.3% 범위의 결과를 얻었으며, 결정이 형성된 조건에서는 XRD분석결과 $2\theta=28.5$ 및 47.5에서 Si (111), (220) peak을 확인할 수 있었다. Surface Profilometer 를 이용한 surface roughness의 경우 $6.3{\AA}\sim32.4{\AA}$ 범위의 결과를 얻었으며, crystalline Portion이 높을수록 surface roughness가 증가함을 알 수 있었다.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.85.2-85.2
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• 2010

$Cu_2ZnSnSe_4$ (CZTSe) is one of candidate to alternate $Cu(In,Ga)Se_2$ as solar absorber material for solar cell. The expensive elements of In and Ga are replaced by Zn and Sn, respectively to lower the material cost. In this study we fabricated CZTSe thin film by selenization of single precursor layer consisted metallic constituent. Precursor compositions ratio were selected to have Cu-poor and Zn-rich content and prepared by RF magnetron sputtering. Thermal processing was applied to introduce selenium into as-deposited films at temperatures ranging from 350 to 500 for time up to 120 minutes. Single precursor films showed amorphous structure and consist of individual elements of Cu, Zn, and Sn. It was confirmed by XRD analysis that synthesis of CZTSe compound is occurred from lower temperature process, although concurrently additional phases such as binary cooper selenides are also existed. The quality of CZTSe crystal was improved as temperature increased. We also investigated the optical and electrical properties of as-selenized CZTSe as well.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.7
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• pp.1285-1290
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• 2017

We prepared ITZO thin films with various thicknesses on glass substrates using RF magnetron sputtering and investigated electrical, optical and structural properties of the thin film. Sheet resistance of ITZO thin film showed a decreasing trend on the increase of film thickness, but its resistivity exhibited a substantially constant value of $5.06{\pm}1.23{\times}10^{-4}{\Omega}-cm$. Transmittance of ITZO thin film moved to the long-wavelength with the increase of film thickness. Figure of merit in a visible light and an absorption area of P3HT:PCBM organic active layer of the 360nm-thick IZTO thin film was $8.21{\times}10^{-3}{\Omega}^{-1}$ and $9.29{\times}10^{-3}{\Omega}^{-1}$, respectively. Through XRD and AFM measurements, it was confirmed that all the ITZO thin films have amorphous structure and the surface roughness of films are very smooth in the range of 0.561 to 0.263 nm. In this study, it was found that amorphous ITZO thin film is a very promising material for organic solar cell.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.11-16
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• 2013

The current solar cell industry is experiencing a temporary plateau due to a sluggish economy and oversupply. It is expected that the solar industry can see similar growth to that of the recent past by overcoming the current situation, as there is growing demand globally for solar energy. The current situation led to restructuring of the world's solar industry, and domestic firms will need to have competitiveness through strategic approaches and proprietary technology to survive in the global solar market. Crystalline and amorphous silicon based solar cells have led the solar industry and occupied half or more of the market thus far. They will do so in the future PV market as well by playing a pivotal role in the solar industry. In this paper, the current status and prospects of silicon based solar cells, from materials to comprehensive and high efficiency technology that can emerge in the future, are discussed.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.103.2-103.2
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• 2011

비정질 실리콘 태양전지의 효율을 증가하기 위하여 많이 사용되는 방법 중 하나는 입사되는 빛의 산란을 증가하여 태양전지의 광흡수를 증가시키는 방법이다. 이를 위하여 양극전극으로 사용되는 TCO층의 일정한 패턴 처리를 통하여 광산란을 증가시키는 방법이 사용되고 있다. 본 연구에서는 나노 임프린트 리소그래피방법을 사용하여 Ag 나노로드를 증착한 기판을 제조하고 이를 비정질 실리콘 태양전지에 적용하였다. 실험결과, 그림과 같이 높이와 너비가 300nm 정도로 일정한 패턴의 Ag 나노로드를 제조하였다. 또한, 그 위에 증착된 Si 박막의 경우, 나노로드 전체를 감싸는 돔 형태로 성장하였다. 이와 같은 나노로드 위에 substrate n-i-p 구조의 비정질 박막 태양전지를 증착하고 그 특성변화를 분석하고자 하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.49-52
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• 2009

Practical building integrated photovoltaic system built by Kolon E&C has been monitored and evaluated with respect to power generation, which was installed in Deokpyeong Eco Service Area in Deokpyeong, Gyeonggi, Korea. The amorphous silicon transparent PV module in this BIPV system has 44Wp in power output per unit module and 10% of transmittance with the unit dimension with $980mm{\times}950mm$. The BIPV system was applied as the skylight in the main entrance of the building. This study provided the database for the practical application of the transparent thin-film PV module for BIPV system through 11 month monitoring as well as various statistical analyses such as monthly power output and insolation. Average monthly power output of the system was 52.9kWh/kWp/month which is a 60% of power output of the previously reported data obtained under $30^{\circ}$of an inclined PV module facing south(azimuth=0). This lower power output can be explained by the installation condition of the building facing east, west and south, which was resulted from the influence of azimuth.