• Korean Journal of Materials Research
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• v.14 no.5
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• pp.343-347
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• 2004

We investigated the growth feasibility of polycrystalline Si film on mica substrate for the transfer of the layer to a plastic substrate. The annealing temperature was limited up to $600^{\circ}C$ because of crack development in the mica substrate. Amorphous Si film was deposited on mica substrate by PECVD and was crystallized by furnace annealing. During the annealing, bubbles were formed at the Si/mica interface. The bubble formation was avoided by the Ar-plasma treatment before amorphous Si deposition. A uniform and clean polycrystalline Si film was obtained by coating $NiCl_2$ on the amorphous Si film and annealing at $500^{\circ}C$ for 10 h. The conventional Si lithography was possible on the mica substrate and the devices fabricated on the substrate could be transferred to a plastic substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1305-1309
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• 2003

To utilize FeCoSiB amorphous films for magnetoelastic sensors, the temperature dependency of magnetization (M-T curve) and the magnetization properties of the amorphous films were investigated in this study. As the amount of cobalt In the films increased, the Curie temperature decreased but the crystallization temperature increased. In addition to this, the crystallization temperature was lower than the Curie temperature in the film containing 20 at% cobalt. The optimized annealing condition was set up by analyzing the H-T curve. And then, the amorphous film that has excellent magnetic properties and uni-axal anisotropy could be prepared for construction of the magnetoelastic sensor devices. The coercive force of the film was below 0.5 Oe and the anisotripic field was about 5 Oe.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.27-32
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• 2013

We investigated the growth mechanism of amorphous-phase Si thin films in order to improve the film characteristics and circumvent photo-degradation effects by implementation of hot-wire chemical vapor deposition. Amorphous silicon thin films grown in a silane/hydrogen mixture can be decomposed by a resistive heat filament. The structural properties were observed by Raman spectroscopy, FTIR, SEM, and TEM. The electrical properties of the films were measured by photo-conductivity, dark-conductivity, and photo-sensitivity. The contents of Si-H and $Si-H_n$ bonds were measured to be 19.79 and 9.96% respectively, at a hydrogen flow rate of 5.5 sccm, respectively. The thin film has photo-sensitivity of $2.2{\times}10^5$ without a crystalline volume fraction. The catalyst behavior of the hot-wire to decompose the chemical precursors by an electron tunneling effect depends strongly on the hydrogen mixture rate and an amorphous Si thin film is formed from atomic relaxation.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.453-458
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• 1987

Amorphous silicon thin-film transtors (TFT's) have been designed and fabricated on glass substrates. The hydrogenated amorphous silicon (a-Si:H) thin-film has been deposited by decomposing silane(SiH4) in hydorgen ambient by rf glow discharge method. Amorphous silicon nitride(a-Si:H) has been chosen as the gate dielectric material. It has been prepared by decomposing the mixed gas of silane(SiH4) and ammonia(NH3). The electrical properties and performance characteristics of the thin-film transistrs have been measured and compared with the requirements for the switching elements in liquid crystal flat panel display. The results show that liquid crystal flat panel displays can be fabricated using the thin-film transistors described in this paper.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.197-199
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• 2011

In this paper, the bottom-gate thin-film transistors (TFTs) were fabricated with an amorphous/microcrystalline Si double layer (DL) as an active layer and the variations of the electrical characteristics were investigated according to the DC bias stresses. Since the fabrication process of DL TFTs was identical to that of the conventional amorphous Si (a-Si) TFTs, it creates no additional manufacturing cost. Moreover, the amorphous/microcrystalline Si DL could possibly improve stability and mass production efficiency. Although the field effect mobility of the typical DL TFTs is similar to that of a-Si TFTs, the DL TFTs had a higher reliability with respect to the direct current (DC) bias stresses.

• Journal of Magnetics
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• v.9 no.1
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• pp.23-26
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• 2004

A magneto-current (MC) was investigated for magnetic tunnel transistor (MTT) with amorphous n-type Si film. A relative MC (more than 49.6%) was observed at an emitter-base bias voltage ($V_{EB}$) of 0.65 V at room temperature. Above a $V_{EB}$ of 0.70 V, however, a rapid decrease in MC was observed in the amorphous Si-based MTT. The collector current increasing and transfer ratio as emitter-base voltage were mainly due to the rapid creation electrons of conduction band states in the Si collector. This approach would make integration in various components and systems easier than a MTT grown on a semiconductor wafer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.1-4
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• 2008

The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.281-286
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• 2002

In odder to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. First, we prepared CoCr and CoCrTa single layer using the Facing Targets Sputtering system to investigate theirs properties. It was revealed that with increasing the film thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. The CoCrTa thin film showed bettor crystalline and magnetic characteristics than CoCr thin film. As a result of investigating magnetic properties of CoCr and CoCrTa magnetic layer on introducing the Si underlayer, perpendicular coercivity and saturation magnetization of CoCr/Si and CoCrTa/Si bilayered thin film were decreased due to the increased grain size and diffusion of Si atoms to magnetic layer. And they showed constant with increasing the film thickness of Si thin film. However, in case of CoCrTa/Si bilayered thin film, in-plane coercivity was controlled low at about 250Oe. The c-axis orientations of CoCr/si and CoCrTa/Si bilayered thin film showed a good crystalline characteristics as about $2^{\circ}$.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.178-178
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• 1999

Low temperature Si epitaxy can provide flexibility for a device designer to tailor or optimize the device performance. It is better method for controlling the doping thickness, concentration and profile than ion implantation and diffusion. But there is a limited growth thickness in this method. At a given temperature, the film grows epitaxially for a certain limiting thickness(hepi) and becomes amorphous. The transition from crystalline Si to amorphous Si is abrupt. In this study, Si film was deposited by ion beam sputter deposition on Si (0001) above a limiting thickness and measure the strain in the interface between crystalline Si and amorphous Si. The strain was compressive and the maximum value was about 2%.

• Current Photovoltaic Research
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• v.8 no.3
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• pp.94-101
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• 2020

This study was trying to focus on achieving high efficiency of multi junction solar cell with thin film silicon solar cells. The proposed thin film Si-Ge/c-Si tandem junction solar cell concept with a combination of low-cost thin-film silicon solar cell technology and high-efficiency c-Si cells in a monolithically stacked configuration. The tandem junction solar cells using amorphous silicon germanium (a-SiGe:H) as an absorption layer of upper sub-cell were simulated through ASA (Advanced Semiconductor Analysis) simulator for acquiring the optimum structure. Graded Ge composition - effect of E_g profiling and inserted buffer layer between absorption layer and doped layer showed the improved current density (J_sc) and conversion efficiency (η). 13.11% conversion efficiency of the tandem junction solar cell was observed, which is a result of showing the possibility of thin film Si-Ge/c-Si tandem junction solar cell.