• Journal of Surface Science and Engineering
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• v.53 no.5
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• pp.201-206
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• 2020

A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO₂-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was used for stabilizing APDBD. Oxygen permeability was evaluated by forming an oxidized SiOxCy(-H) thin film on a PET film. When the single-layer oxidized SiOxCy(-H) film was coated on the PET, the oxygen gas permeability decreased by 46% compared with bare PET. In case of three-layer oxidized SiOxCy(-H) film, the oxygen gas permeability decreased by 73%. The oxygen permeability was affected by the thickness of the SiO₂-like layer formed by oxidation treatment rather than the thickness of the SiOxCy(-H) film. The excellent corrosion resistance was demonstrated by coating an oxidized SiOxCy(-H) thin film on the silver-coated aluminum PCB for light emitting diode (LED).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.12
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• pp.1245-1249
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• 2015

This study investigated the reflection spectra of wrinkled metal/polymer multilayers. A wavy surface was self-assembled by annealing an aluminum-coated poly(methyl metacrylate) layer on a silicon substrate. The total and diffuse reflectance characteristics of the sample with additional metal coatings(aluminum or silver) were evaluated in the visible wavelength(400~800 nm) using a spectrophotometer. The results showed that the wrinkled surface enhanced the diffuse reflectance up to 40~50% in the lower-wavelength range, demonstrating its potential for applications to optical thin-film devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.313-316
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• 1998

Conjugated oligomers have been already used as active layers in field effect transistors, photodiodes and electroluminescent devices. Particularly thiophene oligomers such $\alpha$ -sexithiophene($\alpha$-6T) attract great interest for its prospective app1ications in large-area flexible displays. In this study, we investigated the contact properties between the organic semiconductor $\alpha$-6T and metals such as Au(Gold), Ag(Silver), Cr(Chromium), Al(Aluminum), Cr(Chromium). Using the Transmission Line Model(TLM) method, specific contact resistances of the metal lines in contact with the $\alpha$-6T were determined. From the current-voltage characteristics, electrical conductivity of the $\alpha$-6T films is found.

• Journal of Surface Science and Engineering
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• v.57 no.5
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• pp.379-385
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• 2024

Al-Ag thin films with varying compositions were fabricated using a combinatorial sputtering system to develop highly sensitive SAW devices. The Al-Ag sample library exhibited a wide range of electrical resistivity and chemical compositions, providing valuable data for selecting optimal materials. Recognizing the significant influence of both resistivity and density of IDT electrodes on the generation of acoustic waves from piezoelectric materials, three types of Al-Ag thin films with different Al contents were fabricated, maintaining a consistent thickness of 150 nm. As the Al content decreased from 84.6 at% to 21.7 at%, the resistivity increased from 5.1 to 0.8 × 10^-5 Ω-cm, while the calculated density increased from 3.9 to 8.8 g/cm³. The SAW devices fabricated with these Al-Ag IDT electrodes resonated at 71 MHz without frequency shifts, but the resonant frequency selectivity and insertion loss deteriorated with decreasing Al content, highlighting the predominant influence of electrode density over electrical conductivity on SAW device performance.

• Journal of Surface Science and Engineering
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• v.43 no.3
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• pp.148-153
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• 2010

Transparent conducting films having a hybrid structure of GZO/Metal/GZO were prepared on glass substrates by sequential deposition using DC magnetron sputtering. Silver, copper, aluminum and zinc thin films were used as the intermediate metal layers in the hybrid structure. The electrical and optical properties of hybrid transparent conducting films were investigated with varying the thickness of metal layer or GZO layers. With increasing the metal thickness, hybrid films showed a noticeable improvement of the electrical conductivity, which is mainly dependent on the electrical property of the metal layer. GZO(40 nm)/Ag(10 nm)/GZO(40 nm) film exhibits a resistivity of $5.2{\times}10^{-5}{\Omega}{\cdot}cm$ with an optical transmittance of 82.8%. For the films with Zn interlayer, only marginal reduction in the resistivity was observed. Furthermore, unlike other metals, hybrid films with Zn interlayer showed a decrease in the resistivity with increasing the GZO thickness. The optimal thickness of GZO layer for anti-reflection effect at a given thickness of metal (10 nm) was found to be critically dependent on the refractive index of the metal. In addition, x-ray diffraction analysis showed that the insertion of Ag layer resulted in the improvement of crystallinity of GZO films, which is beneficial for the electrical and optical properties of hybrid-type transparent conducting films.