• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2182-2185
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• 1999

In this experimental study we propose the double dielectric barrier discharge(DDBD) reactor to produce as high an electric field as possible. DDBD reactor is designed to remove $NO_x$ at atmospheric pressures from the moving pollution source such as diesel automobile DDBD reactor consisted of two cylinder glass tubes arranged so that the gas flow was directed between the two tubes. Inside of the inner tube was filled with small metal beads and outside of the inner tube was wounded with stainless wire to form the electrode. The outer tube was surrounded by an aluminum foil In this reactor there are three electrodes, i.e. metal bead(C), helical wire(I) and aluminum foil(0). By using DDBD reactor we will report some interesting results of treatment of the gas which is the dilute mixtures of NO in N2. And then we compared thee results with the results of cylinder-wire(CW) which is one of popularly used reactor in non-thermal plasma applications.

• Journal of the Korea institute for structural maintenance and inspection
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• v.4 no.4
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• pp.109-119
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• 2000

PVDF film sensor was applied to measure the stress concentration for monitoring the structural integrity. The strain calibration of this film sensor was performed by the bending test of aluminum beam. The PVDF sensor and the electrical strain gage were bonded on the beam. When the beam was loaded, the output of electrical strain gage was compared with the output of the PVDF sensor. The waveform of PVDF sensor output was shown as the same form of the output of electrical strain gage. The gain was determined as 1.7 by comparing these two signals to determine the exact value of the strain. In order to experiment the stress concentration, the stress field was analyzed by finite element analysis. The tensile test of notched steel specimens was conducted to develop the measurement technique of stress concentration. The output voltage ratio between the PVDF sensor near the notch and the PVDF sensor far from the notch could give the information about the load bearing capacity of steel specimen.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.1
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• pp.15-21
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• 2013

In this paper, a MEMS tunable capacitor was successfully designed and fabricated using an aluminum nitride film and a gold suspended membrane with two air gap structure for commercial RF applications. Unlike conventional two-parallel-plate tunable capacitors, the proposed tunable capacitor consists of one air suspended top electrode and two fixed bottom electrodes. One fixed and the top movable electrodes form a variable capacitor, while the other one provides necessary electrostatic actuation. The fabricated tunable capacitor exhibited a capacitance tuning range of 375% at 2 GHz, exceeding the theoretical limit of conventional two-parallel-plate tunable capacitors. In case of the contact state, the maximal quality factor was approximately 25 at 1.5 GHz. The developed fabrication process is also compatible with the existing standard IC (integrated circuit) technology, which makes it suitable for on chip intelligent transceivers and radios.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.6
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• pp.20-26
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• 2003

This study proposes the construction of attractor quadrant method for high-precision cutting characteristics evaluation of non-ferrous metals. Also this paper aims to find the optimal cutting conditions of diamond turning machine by measuring surface form and roughness to perform the cutting experiment of non-ferrous metals, which are aluminum, with diamond tool. As well, according to change cutting conditions such as feed rate, using diamond turning machine to Perform cutting Processing, by measuring cutting force and surface roughness and according to cutting conditions the aluminum about cutting properties. Trajectory changes in the attractor indicated a substantial difference in fractal characteristics and attractor quadrant characteristics. In quantitative quadrant feature extraction, 1,309 point in the case of A17075 (one quadrant) and 1,406 point (one quadrant) in the case of brass were proposed on the basis of attractor reconstruction. Proposed attractor quadrant method can be used for high-precision cutting characteristics evaluation of non-ferrous metals.

• Journal of Mechanical Science and Technology
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• v.20 no.6
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• pp.819-827
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• 2006

The stress-strain relation of aluminum (Al) alloy foam cell wall was evaluated by the instrumented sharp indentation method. The indentation in a few micron ranges was performed on the cell wall of Al-alloy foam having a composition or Al-3wt.%Si-2wt.%Cu-2wt.%Mg as well as its precursor (material prior to foaming). To extract the stress-stram relation in terms of yield stress ${\sigma}_y$, strain hardening exponent n and elastic modulus E, the closed-form dimensionless relationships between load-indentation depth curve and elasto-plastic property were used. The tensile properties of precursor material of Al-alloy foam were also measured independently by uni-axial tensile test. In order to verify the validity of the extracted stress-strain relation, it was compared with the results of tensile test and finite element (FE) analysis. A modified cubic-spherical lattice model was proposed to analyze the compressive behavior of the Al-alloy foam. The material parameters extracted by the instrumented nanoindentation method allowed the model to predict the compressive behavior of the Al-alloy foam accurately.

• Journal of the Korean institute of surface engineering
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• v.48 no.5
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• pp.227-232
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• 2015

Corrosion characteristic of the duplex Al-Mg-Si alloys with low, commercial and high solute contents were studied using an anodic polarization test in 1M NaCl solution at room temperature. Polarization range condition of the experiment were form .0.3V to .1.3V with a 0.2 mV scanning speed. The exchange current density means corrosion rate of the low solute alloy was low as about $16.29{\mu}A/cm^2$, and that of the high solute alloy was high as $84.92{\mu}A/cm^2$. The difference was mainly attributed to the inter-granular precipitates $Mg_2Si$ and Si which could make a galvanic corrosion on the aluminum base. The amount of precipitates was greater in high solute alloy at mainly in grain boundary. While, the extruded alloys had better corrosion resistance than the cast alloy because the silicon precipitates become coarse during the extrusion process.

• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.188-203
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• 2021

The specific benefits of the modified films formed on preliminary anodized aluminum, including the versatility of their potential applications impose the need for evaluation of the exploitation reliability of these films. In this aspect, the durability of Cu and Ni modified anodized aluminum oxide (AAO) films on the low-doped AA1050 alloy was assessed through extended exposure to a 3.5% NaCl model corrosive medium. The electrochemical measurements by means of electrochemical impedance spectroscopy (EIS) and potentiodynamic scanning (PDS) after 24 and 720 hours of exposure have revealed that the obtained films do not change their obvious barrier properties. In addition, supplemental analyses of the coatings were performed, in order to elucidate the impact of the AC-deposition of Cu and Ni inside the pores. The scanning electron microscopy (SEM) images have shown that the surface topology is not affected and resembles the typical surface of an etched metal. The subsequent energy dispersive X-ray spectroscopy (EDX) tests have revealed a predominance of Cu in the combined AAO-Cu/Ni layers, whereas additional X-ray photoelectron (XPS) analyses showed that both metals form oxides with different oxidation states due to alterations in the deposition conditions, promoted by the application of AC-polarization of the samples.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.26-35
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• 2024

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.5
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• pp.205-209
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• 2011

Zinc oxide has semi-conductivity and super conductivity characteristics. It can be used optically and is applied on many areas such as gas sensor, solar cell and optical waveguide. In this paper, to improve optical characteristics of ZnO, aluminum was added on zinc oxide. Zinc oxide and aluminum zinc oxide was fabricated as nano fiber form. ZnO solution was created by mixing poly vinyl pyrrolidone, ethyl alcohol, and zinc acetate. An Al doped ZnO was created by adding aluminum solution to ZnO sol. By applying these sols on electro spinning method, nano fibers were fabricated. These fibers are heat treated at 300, 500, and $700^{\circ}C$ degrees and were analyzed with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) to examine the nano structures. TGA and DSC measurement was also used to measure the change of mass and calorie upon temperature change. The absorbance of ZnO and Al-doped ZnO was carried out by UV-vis measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.754-759
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• 2013

Aluminum oxide($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since $Al_2O_3$ has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, $Al_2O_3$ layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form $Al_2O_3$ to reduce the process time. $Al_2O_3$ synthesized by ALD on c-Si (100) wafers contains a very thin interfacial $SiO_2$ layer, which was confirmed by FTIR and TEM. To improve passivation quality of $Al_2O_3$ layer, the deposition temperature was changed in range of $150{\sim}350^{\circ}C$, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in $250^{\circ}C$, $400^{\circ}C$ and 10 min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of $Al_2O_3$ deposited on p-type silicon.