• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.179-180
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• 2012

Aluminum alloys are widely known as non-ferrous metal with light weight and high strength. Consequently, these materials take center stage in the aircraft and automobile industry. The Al7075 aluminum alloy is based on the Al-Zn-Mg-Cu and one of the strongest wrought aluminum alloys. Aluminum nitride has ten times higher thermal conductivity($319W/m{\cdot}K$) than Al2O3 and also has outstanding electric insulation($1{\times}1014{\Omega}{\cdot}cm$). Furthermore, it has high mechanical property (430 MPa) even though its co-efficient of thermal expansion is less than alumina For these reasons, it has great possibilities to be used for not only the field which needs high strength lightweight but also electronic material field because of its suitability to be applied to the insulator film of PCB or wafer of ceramic with high heat conduction. This paper investigates the mechanical properties and corrosion behavior of aluminum alloy Al7075 deposited with aluminum nitride thin films To improve the surface properties of Al7075 with respect to hardness, and resistance to corrosion, aluminum nitride thin films have been deposited by pulsed DC reactive magnetron sputtering. The pulsed DC power provides arc-free deposition of insulating films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.334-334
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• 2011

We applied N-ion bombardment and heat treatment to the Cu thin films deposited on aluminum oxide layer for the enhancement of adhesion. With e-beam evaporation method. $1,000{\AA}$ thick Cu pre-bombardment layer was deposited on the aluminum oxide surface and then N-ion beam was bombared in order to mix the atoms at the film/substrate interface. Additional $4,000{\AA}$-thick Cu film was the coated. Subsequently, the ion mixide Cu on aluminum oxide was annealed at $200^{\circ}C$ and $300^{\circ}C$ in vacuum.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2005년도 추계학술대회 논문집
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• pp.1089-1096
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• 2005

This study was experimental test of edgewise compression properties for aluminum(type-50XX) sandwich panel with thermal environment and surface treatment using adhesive film. There was decreasing $10\%-peel$ strength after thermal environment. Through compressive. buckling mode know to seen of properties of adhesive, sheet and core strength. First case of Chromate to aluminum sheet, know low shear strength of adhesive through buckling mode but case of Beomite to aluminum sheet, know than thin sheet and core low strength through buckling mode.

• 한국주조공학회지
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• 제20권1호
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• pp.38-45
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• 2000

The remelting for recycling or thin aluminum scrap, such as aluminum chip generally involves melting of these pieces submerged in molten salt flux. In this study, the effects of salt flux compositions and alloying elements on the aluminum dropletscoalescence and oxide film removal were studied in 99.8%Al, Al-1.01%Cu, Al-1.03%Si, and Al-1.38%Mg alloys as a function of holding time at $740^{\circ}C$ Salt fluxes based on NaCl-KCl(1:1) with addition of 5wt.% fluorides(NaF, $Na_3AlF_6$, $CaF_2$) or 5 wt.% chloride($MgCl_2$, $AlCl_3$) were used. The experimental results show that NaCl-KCl(1:1) with addition of 5 wt.% fluorides exhibits better coalescence ability than that with chlorides. The oxide film is not removed by NaCl-KCl(1:1) with addition of 5 wt.%chlorides, while it is removed by NaCl-KCl(1:1) with addition of 5 wt.% fluorides. The aluminum droplets coalescence and oxide film removal by salt fluxes are related to interfacial tension tension between metal and salt flux.

• 대한기계학회논문집B
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• 제37권6호
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• pp.577-582
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• 2013

AZO(Aluminium-doped Zinc Oxide)는 기존의 LCD, OLED, 광센서, 유기태양전지 등의 투명전극에 널리 사용되는 ITO(Indium Tin Oxide)를 대체하기 위한 물질로 주목받고 있다. 본 연구에서는 유기태양전지의 투명 전극으로 많이 사용되는 ITO 를 대체하기 위해 원자층 증착(ALD) 공정의 저온 선택적 증착 특성을 이용하여 유연성 폴리머인 PEN 기판상에 AZO 투명전극을 직접 패턴방식으로 제조하고, 그 투명전극의 구조적, 전기적, 광학적 특성을 평가하였다. 전기적, 광학적 특성 결과들로부터 원자층 증작공정의 저온 선택적 증착 특성을 통해 형성된 AZO 투명전극의 유기태양전지로의 적용 가능성을 확인할 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.746-749
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• 2002

Aluminum oxide thin films were grown on a poly ethylene naphthalate (PEN) substrate at the temperature of 100$^{\circ}C$ using atomic layer deposition method. The film showed very flat morphology and good adhesion to the substrate. The visible spectrum showed higher transmittance in the range from 400 nm to 800 nm than that of PEN. The water vapor transmission value measured with MOCON for 230nm oxide-deposited PEN was 0.62g/$m^2$/day @ 38$^{\circ}C$, while that of PEN substrate was 1.4g/$m^2$/day @ 38$^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.37-38
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• 2000

The ZnS:Tb thin-film electroluminescent devices were grown by atomic layer deposition with utilizing single-layer aluminum oxide and/or multilayered tantalum aluminum oxide, $Ta_xAl_yO$, as upper and lower insulating layers. These devices were investigated in terms of the luminescent and electrical characteristics. From this analysis, the devices using the $Ta_xAl_yO$ instead of $Al_2O_3$ were observed to have a lower threshold voltage for emission due to the higher relative dielectric constant of $Ta_xAl_yO$ insulators than that of the $Al_2O_3$ device. And there was a large amount of dynamic space charge generation in the phosphor of the device with the $Ta_xAl_yO$ insulators seemingly due to electron multiplication such as trap ionization.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.25.2-25.2
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• 2011

Recently, thin film capacitors used for vehicle inverters are small size, high capacitance, fast response, and large capacitance. But its applications were made up of liquid as electrolyte, so its capacitors are limited to low operating temperature range and the polarity. This research proposes using Ni-P alloys by electroless plating as the electrode instead of liquid electrode. Our substrate has a high aspect ratio and complicated shape because of anodic aluminum oxide (AAO). We used AAO because film thickness and effective surface area are depended on for high capacitance. As the metal electrode instead of electrolyte is injected into AAO, the film capacitor has advantages high voltage, wide operating temperature, and excellent frequency property. However, thin film capacitor made by electroless-plated Ni on AAO for full-filling into etched tunnel was limited from optimizing the deposition process so as to prevent open-through pore structures at the electroless plating owing to complicated morphological structure. In this paper, the electroless plating parameters are controlled by temperature in electroless Ni plating for reducing reaction rate. The Electrical properties with I-V and capacitance density were measured. By using nickel electrode, the capacitance density for the etched and Ni electroless plated films was 100 nFcm-2 while that for a film without any etch tunnel was 12.5 nFcm-2. Breakdown voltage and leakage current are improved, as the properties of metal deposition by electroless plating. The synthesized final nanostructures were characterized by scanning electron microscopy (SEM).

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2003년도 학술대회논문집
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• pp.227-232
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• 2003

Anodizing film was prepared by anodic oxidation of pure aluminum(purity > 99.50) using DC power supply for constant current mode in an electrolytic solution of surface of sulfuric acid. Effects of pre-treatment process such as chemical polishing, acid cleaning, alkali etching before anodic oxidation, were studied to microstructures and surface morphologies. A roughness on surface of anodizing film had to be decreased for amorphous phase by anodic oxidation. A roughness on surface of anodizing film decrease as annealing temperature increased in chemical polishing.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1971-1973
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• 2005

We fabricated an alumina membrane with nano-sized pore array by anodic oxidation using the thin film aluminum deposited on silicon wafer. It is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. The nano-sized pores with diameter of $60{\sim}120nm$ was obtained by $40{\sim}80$ voltage. The pore widening process was employed for obtaining the flat surface because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of rough surface. Finally, the sample was immersed to the phosphoric acid with 0.1M concentration to etching the barrier layer. The sample will be applied to electronic sensors, field emission display, and template for nano- structure.