Characterization of Aluminum Oxide Thin Film Grown by Atomic Layer Deposition for Flexible Display Barrier Layer Application

Aluminum oxide thin films were grown on a poly ethylene naphthalate (PEN) substrate at the temperature of 100$^{\circ}C$ using atomic layer deposition method. The film showed very flat morphology and good adhesion to the substrate. The visible spectrum showed higher transmittance in the range from 400 nm to 800 nm than that of PEN. The water vapor transmission value measured with MOCON for 230nm oxide-deposited PEN was 0.62g/$m^2$/day @ 38$^{\circ}C$, while that of PEN substrate was 1.4g/$m^2$/day @ 38$^{\circ}C$.