• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.215-215
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• 2014

Composites layer of Al-Cr-Ni-O system was prepared on a steel plate by hydro-thermal process at $700^{\circ}C$ for 12 hours, which phase identification and thermal conductivity were determined. The composites layer consisted of aluminum nitride, alumina, chromium carbide and aluminium, which density was $3.7kg/m^3$. The thermal conductivity of the coating layer determined by thermal data acquisition system was about 98.0 W/m/ which depended on the AlN content. Numerical modelling of the heat transfer behavior of the coating layer was well agreement with the empirical data.

• 한국세라믹학회지
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• 제26권4호
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• pp.453-458
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• 1989

Aluminum nitride powder prepared from the hydroxides, AlOOH and Al(OH)3 which were obtained by hydrolysis of Al-isopropoxide, was densified at 1750 and 180$0^{\circ}C$ for 60 min by hot-pressing under the pressure of 25kg/$\textrm{cm}^2$. Theoretical density could be obtained at 175$0^{\circ}C$. Their flexural strengths were 450MPa and 395MPa for the specimens obtained from Al(OH)3 and AlOOH, respectively. There was no remarkable change in flexural strength up to 100$0^{\circ}C$. Fracture toughness values were 3.50MN/m3/2 for Al(OH)3 and 3.11MN/m3/2 for AlOOH. It is assumed that these differences in mechanical properties are due to the abnormal grain growth for the AlN ceramics obtained from AlOOH.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1224-1231
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• 2003

This paper reports on the air-gap type thin film bulk acoustic wave resonator(FBAR) using ultra thin wafer with thickness of 50$\mu\textrm{m}$. It was fabricated to realize a small size devices and integrated objects using MEMS technology for flexible microsystems. To reduce a error of experiment, MATLAB simulation was executed using material characteristic coefficient. Fabricated thin FBAR consisted of piezoelectric film sandwiched between metal electrodes. Used piezoelectric film was the aluminum nitride(AlN) and electrode was the molybdenum(Mo). Thin wafer was fabricated by wet etching and dry etching, and then handling wafer was used to prevent damage of FBAR. The series resonance frequency and the parallel frequency measured were 2.447㎓ and 2.487㎓, respectively. Active area is 100${\times}$100$\mu\textrm{m}$$^2$.Q-factor was 996.68 and K$^2$$\_$eff/ was 3.91％.

• 반도체디스플레이기술학회지
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• 제3권2호
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• pp.17-21
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• 2004

Aluminum nitride(AlN) thin films were deposited on silicon substrate by reactive RF magnetron sputtering without substrate heating. We investigated the dependence of some properties for AlN thin film on sputtering conditions such as working pressure, $N_2$ concentration and RF power. XRD, Ellipsometer and AES has been measured to find out structural properties and preferred orientation of AlN thin films. Deposition rate of AlN thin film was increased with an increase of RF power and decreased with an increase of $N_2$ concentration. AES in-depth measurements showed that stoichiometry of Aluminium and Nitrogen elements were not affected by $N_2$ concentration. It has shown that low working pressure, low $N_2$ concentration and high RF power should be maintained to deposit AlN thin film with a high degree of (0002) preferred orientation.

• 반도체디스플레이기술학회지
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• 제3권4호
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• pp.33-37
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• 2004

As the high speed and high integration of semiconductor devices and the generation of heat increases resulted in the effective heat dissipation influences on the performance and lifetime of semiconductor devices. The heat resistance or heat spread function of EMC(epoxy molding compound) which protects these devices became one of very important factors in the evaluation of semiconductor chips. Recently, silica, alumina, AlN(aluminum nitride) powders are widely used as the fillers of EMC. The filler loading in encapsulants was high up to about 80 vol%. A high loading of filler was improved low water absorption, low stress, high strength, better flowability and high thermal conductivity. In this study, the thermal properties were investigated through thermal, mechanical and microstructure. Thermophysical properties were investigated by laser flash and differential scanning calorimeter(DSC). For detailed inspection of materials, the samples were examined by SEM.

• 대한기계학회논문집
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• 제16권12호
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• pp.2279-2286
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• 1992

본 연구에서는 절삭가공만으로 실리콘 석출을 위한 경면가공을 얻기위한 최적 의 조건을 찾고자 한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.71-72
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• 2008

In this paper, the effect of thermal annealing on surface acoustic wave (SAW) properties of aluminum nitride (AlN) films were described. The films were fabricated on Si substrates by using Pulsed Reactive Magnetron Sputtering System. The SAW properties of $600^{\circ}C$-annealed AlN films were better than those of both $900^{\circ}C$-annealed AlN films and as-deposited ones. Their SAW velocities (Raleigh mode) and insertion losses were about 5212 m/s and 16.19 dB at $600^{\circ}C$ with the wavelength of $40{\mu}m$. The dependence of characteristics of AlN films on annealing conditions were also evaluated by using Fourier Transform-Infrared Spectroscopy (FT-IR) Spectrums and Atomic Force Microscopy (AFM).

• 한국초전도ㆍ저온공학회논문지
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• 제13권2호
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• pp.17-20
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• 2011

Superconducting magnetic energy storage (SMES) has attracted a great deal of interest from the viewpoint of energy saving. The magnet of conduction-cooled high temperature superconducting (HTS) SMES is cooled down by a cryocooler. One of the most important problems to be assured the protection of magnet and cryocooler is breakdown at cryogenic temperature. In this study, we investigated insulation materials such as Kapton, Aluminum Nitride(AIN), Alumina($Al_2O_3$), glass fiber reinforced plastics(GFRP) and vacuum in cryogenic temperature. Also, we analyzed statistically the Weibull distribution of breakdown voltage.

• Bulletin of the Korean Chemical Society
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• 제35권4호
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• pp.1139-1143
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• 2014

The adsorption behavior of the sulphate ($SO{_4}^{2-}$) on the external surface of (5,0), (8,0), and (10,0) zigzag AlNNTs was studied by using density functional calculations. Adsorption energies in the nanotubes are about -8.59, -8.04, -8.60 eV with a charge transfer of 0.59, 0.48, 0.56|e| from the sulphate ion to the nanotubes, respectively. The adsorption energies indicated that sulphate ion can be absorbed strongly on the nanotubes. Therefore, these nanotubes can be used for adsorption of sulphate ion from the environmental systems. It was found that diameter of the AlNNTs has slight role in the adsorption of sulphate ion. The electronic properties of the nanotubes showed notable changes upon the adsorption process.

• ETRI Journal
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• 제38권5호
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• pp.988-995
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• 2016

In this paper, we present a new specific and customized interface tool with parameter identification of Modified Butterworth-Van Dyke models for ladder bulk acoustic wave filters. The aforementioned tool is easy to use and flexible because it allows simulations and reengineering to be conducted in an application. A modular design approach is applied to simplify the extension of the proposed tool for different topologies. The proposed tool was validated using measurements from an aluminum-nitride based ladder BAW filter dedicated to the frequency ranges of the Universal Mobile Telecommunications Service and standards and Wideband Code Division Multiple Access.