• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.320-326
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• 1999

Aluminum oxynitride spinel (ALON) was synthesized by the direct melt nitridation (DMN) process using aluminum metal and aluminium oxide. The amount of ALON increased with increasing the reaction sintering temperature. The specimen containing up to 10 wt% Al showed ALON phase only when heat-treated beyond $1750^{\circ}C$. Whereas the specimen composed of more than 12 wt% Al showed unreacted AlN phase. Bulk density of reaction-sintered specimen was increased with increasing sintering temperature, except the speimen containing unreacted AlN where the density slightly decreased when heat-treated beyond $1750^{\circ}C$, Transgranular fracture mode was observed predominantly in the specimen with higher Al content.

• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.323-330
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• 1998

Mixed oxide compounds of potential usefulness for fibre coatings (hexagonal celsian, $BaAl_2Si_2O_8$ and lanthanum hexaluminate, $LaAl_{11}O_{18}$) or for matrix materials (yttrium aluminium garnet, $Y_3Al_5O_{12}$) were prepared by hybrid sol-gel synthesis and their thermal crystallisation was monitored by thermal analysis, X-ray diffraction and multinuclear solid state MAS NMR. All the gels convert to the crystalline phase below about $12200^{\circ}C$, via amorphous intermediates in which the Al shows and NMR resonance at 36-38 ppm sometimes ascribed to Al in 5-fold coordination. Additional information about the structural changes during thermal treatment was provided by $^{29}Si$, $^{137}Ba$ and $^{89}Y$ MAS NMR spectroscopy, showing that the feldspar framework of celsian begins to be established by about $500^{\circ}C$ but the Ba is still moving into its polyhedral lattice sites about $400^{\circ}C$ after the sluggish onset of crystallization. Lanthanum hexaluminate and YAG crystallise sharply at 1230 and $930^{\circ}C$ respectively, the former via $\gamma-Al_2O_3$, the latter via $YAlO_3$. Yttrium moves into the garnet lattice sites less than $100^{\circ}C$ after crystallisation.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.63.1-63
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• 2003

Catalytic chemical vapor deposition (Cat-CVD) has been developed to deposit alumina(Al$_2$O$_3$) thin films on silicon (Si) crystal using N$_2$ bubbled tir-methyl aluminium [Al(CH$_3$)$_3$, TMA] and molecular oxygen (O$_2$) as source species and tungsten wires as a catalyzer. The catalyzer dissociated TMA at approximately 600$^{\circ}C$ The maximum deposition rate was 18 nm/min at a catalyzer temperature of 1000 and substrate temperature of 800$^{\circ}C$. Metal oxide semiconductor (MOS) diodes were fabricated using gates composed of 32.5-nm-thick alumina film deposited as a substrate temperature of 400oC. The capacitance measurements resulted in a relatively dielectric constant of 7, 4, fixed charge density of 1.74*10e12/$\textrm{cm}^2$, small hysteresis voltage of 0.12V, and very few interface trapping charge. The leakage current was 5.01*10e-7 A/$\textrm{cm}^2$ at a gate bias of 1V.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1281-1282
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• 2008

Low cost TCO(Transparent Conductive oxide) thin films were prepared by 3" DC/RF magnetron sputtering systems. For the AZO preparation processes a 99.99% AZO target (Zn: 98 wt.%, $Al_2O_3$: 2 wt.%) was used. In order to verify feasibility of the AZO thin films to organic light emitting device (OLED) application, test organic light emitting device was fabricated based on AZO as TCO, TPD as hole transporting layer (HTL), Alq3 as both emitting layer (EML) and electron transporting layer (ETL), and aluminium as cathode, where the both ITO and AZO surfaces were treated using $O_2$ RF plasma. The I-V characteristics of the AZO/TPD/Alq3/Al OLEDs were evaluated. As the results, the performance of the OLEDs with AZO as transparent conducting anode could be useable.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.10
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• pp.1782-1785
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• 2007

In this paper, the effect of substrate temperature on structural, electrical and optical properties of aluminium-doped zinc oxide (AZO) films were investigated. AZO thin films were prepared on glass substrate by pulsed DC magnetron sputtering technique. The properties of AZO were measured by using XRD, AFM, UV spectrophotometer, and hall effect measurement system. The resistivity of AZO films was improved under the condition of high substrate temperature. The resistivity decreased from $9.95{\times}10^{-2}\;{\Omega}-cm\;to\;1.1{\times}10^{-3}\;{\Omega}-cm$ as a result of high substrate temperature and the average transmittances in visible range were above 80%.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.167-167
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• 2012

Aluminium-zinc-tin oxide (AZTO) 박막 트랜지스터는 Spin-coating 방법으로 제작되었다. AZTO용액의 용매는 2-Methoxyethanol, 용질은 각각 Aluminium nitride, Zinc acetate dihydrate, Tin chloride가 사용되어 제작되었다. 용액의 안정성을 위해서 미량의 Mono ethyl amine이 첨가되었다. 용액의 Zn:Sn의 몰 비율은 1 : 1로 고정 되었으며 Al의 mole비를 다양하게 늘리면서 실험을 진행하였다. 이렇게 만들어진 AZTO용액은 3,000 rpm으로 30초간 Spin-coating하였으며 이후 Furnace system을 통하여 $500^{\circ}C$의 온도로 1시간 동안 후열처리 공정을 진행하였다. AZTO박막을 활성층으로 제작된 박막 트랜지스터는 Al의 비율이 늘어남에 따라 처음엔 이동도가 증가하였으나 이후 이동도가 낮아지며 소자특성이 나빠지는 것을 보였다. 이러한 현상의 원인을 알아보고자 물리적, 전기적, 광학적 분석을 통해서 Al양의 변화가 박막트랜지스터 구동에 미치는 영향을 해석하였다. 먼저 AZTO용액은 열중량측정/시차열분석법(Thermo Gravimetry/Differential Thermal Analysis)을 이용하여 spin-coating 이후 후 열처리 온도 결정 및 박막의 변화를 관찰하였으며, X-선 분광(X-ray photoelectron spectroscopy)을 이용하여 박막의 조성 및 전자구조의 변화를, 타원분광해석법(Spectroscopic Ellipsometry)분석을 통하여 밴드 갭과 전도대 이하 밴드 갭 내에 존재하는 결함상태변화를 관찰하였다. AZTO 박막 내의 Al양을 조절하는 것은 박막내의 에너지 준위의 변화를 야기하고 그로인해 박막트랜지스터의 특성을 변화킨다는 결과를 도출하였다.

• Journal of Advanced Marine Engineering and Technology
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• v.38 no.10
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• pp.1200-1205
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• 2014

The effect of nanofluids on the heat transfer performance of a pulsating heat pipe has been experimentally investigated. Water-based diamond nanofluid and aluminium oxide ($Al_2O_3$) nanofluid were tested in the concentration range of 0.5-5%. The pulsating heat pipe was constructed using clear Pyrex tubes of 1.85 mm in inner diameter in order to visualize the pulsating action. The total number of turns was eight each for heated and cooled parts. The supply temperatures of heating water and cooling water were fixed at $80^{\circ}C$ and $25^{\circ}C$ respectively. The liquid charging ratio of the nanofluid was 50-70%. The test results showed that the case of 5% concentration of diamond nanofluid showed 18% increase in heat transfer rate compared to pure water. The case of 0.5% concentration of $Al_2O_3$ nanofluid showed 24% increase in heat transfer rate compared to pure water. But the increase of $Al_2O_3$ nanofluid concentration up to 3% did not show further enhancement in heat transfer. It is also observed that the deposited nanoparticles on the tube wall played a major role in enhanced evaporation of working fluid and this could be the reason for the enhancement of heat transfer by a nanofluid, not the enhanced thermal conductivity of the nanofluid.

• Korean Journal of Materials Research
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• v.31 no.3
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• pp.150-155
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• 2021

Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 ℃. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10-4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.

• Korean Journal of Metals and Materials
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• v.48 no.6
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• pp.523-532
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• 2010

Co-application of organic coating and cathodic protection has not provided enough durability to low-alloyed steels inseawater ballast tank (SBT) environments. An attempt has made to study the effect of alloy elements (Al, Cr, Cu, Mo, Ni, Si, W) on general and localized corrosion resistance of steels as basic research to develop new low-allowed steels resistive to corrosion in SBT environments. For this study, we measured the corrosion rate by the weigh loss method after periodic immersion in synthetic seawater at $60^{\circ}C$, evaluated the localized corrosion resistance by an immersion test in concentrated chloride solution with the critical pH depending on the alloy element (Fe, Cr, Al, Ni), determined the permeability of chloride ion across the rust layer by measuring the membrane potential, and finally, we analyzed the rust layer by EPMA mapping and compared the result with the E-pH diagram calculated in the study. The immersion test of up to 55 days in the synthetic seawater showed that chromium, aluminium, and nickel are beneficial but the other elements are detrimental to corrosion resistance. Among the beneficial elements, chromium and aluminium effectively decreased the corrosion rate of the steels during the initial immersion, while nickel effectively decreased the corrosion rate in a longer than 30-day immersion. The low corrosion rate of Cr- or Al-alloyed steel in the initial period was due to the formation of $Cr_2FeO_4$ or $Al_2FeO_4$, respectively -the predicted oxide in the E-pH diagram- which is known as a more protective oxide than $Fe_3O_4$. The increased corrosion rate of Cr-alloyed steels with alonger than 30-day exposure was due to low localized corrosion resistance, which is explained bythe effect of the alloying element on a critical pH. In the meantime, the low corrosion rate of Ni-alloyed steel with a longer than 30-day exposure wasdue to an Ni enriched layer containing $Fe_2NiO_4$, the predicted oxide in the E-pH diagram. Finally, the measurement of the membrane potential depending on the alloying element showed that a lower permeability of chloride ion does not always result in higher corrosion resistance in seawater.

• Journal of Soil and Groundwater Environment
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• v.13 no.1
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• pp.92-100
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• 2008

Experimental studies were conducted to identify the active agents for reductive dechlorination of TCE in cement/Fe(II) systems focusing on cement components such as CaO, $Fe_2O_3$, and $Al_2O_3$. A hematite that was used to simulate an $Fe_2O_3$ component in cement was found to have degradation efficiencies (k = 0.641 $day^{-1}$) equivalent to that of cement/Fe(II) systems in the presence of CaO/Fe(II), only when it contained an aluminum impurity$(Al_2O_3)$. When the effect of $Al_2O_3$ content of hematite/CaO/$Al_2O_3$/Fe(II) system was tested, the mole ratio of $Al_2O_3$ to CaO affected the rate of TCE degradation with an optimum ratio around 1 : 10 that resulted in a rate constant of 0.895 $day^{-1}$. In the SEM images of hematite/CaO/$Al_2O_3$/Fe(II) systems, acicular crystals were also found that were also observed in cement/Fe(II) systems. Thus it was suspected that these crystals were reactive reductants and that they might be goethite or ettringite that are known to have acicular structures. An EDS element map analysis revealed that these crystals were not goethite crystals. A subsequent experiment that tested reactivities of compounds formed during the ettringite synthesis showed that ettringite and minerals associated with ettringite formation are not reactive reductants. These observations conclude that a mineral containing CaO and $Al_2O_3$ with a acicular structure could be a major reactive reductant of cement/Fe(II) systems.