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http://dx.doi.org/10.3740/MRSK.2021.31.3.150

Improvement of Optical and Electrical Properties of AZO Thin Films by Controlling Fluorine Concentration  

Jang, Suyoung (Department of Materials Science and Engineering, Chonnam National University)
Jang, Jun Sung (Department of Materials Science and Engineering, Chonnam National University)
Jo, Eunae (Department of Materials Science and Engineering, Chonnam National University)
Karade, Vijay Chandraknt (Department of Materials Science and Engineering, Chonnam National University)
Kim, Jihun (School of Integrated Technology, Gwangju Institute of Science and Technology)
Moon, Jong-Ha (Department of Materials Science and Engineering, Chonnam National University)
Kim, Jin Hyeok (Department of Materials Science and Engineering, Chonnam National University)
Publication Information
Korean Journal of Materials Research / v.31, no.3, 2021 , pp. 150-155 More about this Journal
Abstract
Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 ℃. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10-4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.
Keywords
solar cells; thin films; transparent conducting electrode; F; Al co-doped ZnO (FAZO);
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