• Journal of the Korean institute of surface engineering
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• v.35 no.3
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• pp.149-157
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• 2002

Spectral emissivity depends on the surface conditions of the materials. The mechanisms that affect the spectral emissivity in anodic oxide films on aluminum were investigated. The aluminum specimens were anodized in a sulfuric acid solution and the thickness of the resulting oxide film formed changed with the anodizing time. FT-IR spectrum analysis identified the anodic oxide film as boehmite ($Al_2$$O_3$.$H_2$O). Both the infrared emisivity and reflectivity of the anodized aluminum were affected by the structure of the anodic oxide film because Al-OH and Al-O-Al have a pronounced absorption band in the infrared region of the spectrum. The presence of an anodic oxide film on aluminum caused a rapid drop in the infrared reflectivity. An aluminum surface in the clean state had an emissivity of approximately 0.2. However, the infrared emissivity rapidly increased to 0.91 as the thickness of the anodic oxide film increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.430-430
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• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.

• Journal of Powder Materials
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• v.25 no.2
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• pp.99-103
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• 2018

Spherical monosized pure aluminum (Al) particles are successfully fabricated by the pulsated orifice ejection method (POEM). The surface reaction between Al and the graphite crucible is investigated by analysing the microstructure and chemical composition of the materials. No significant chemical reaction occurs between Al and the graphite owing to the crystalline Al oxide (${\gamma}-Al_2O_3$) layer generated in the initial state. The ${\gamma}-Al_2O_3$ layer is clearly observed in all regions between the Al particles and graphite via transmission electron microscopy and confirmed by the selected area diffraction pattern. The morphology of the ${\gamma}-Al_2O_3$ layer perfectly follows the surface morphology of the graphite crucible, which showed nanoscale roughness. This implies that molten Al could not directly contact graphite even though the surface of the crucible became rough to some extent. However, this passivation phenomenon allowed the successful fabrication of monosized pure Al particles. Therefore, POEM is a useful process at least to manufacture monosized pure Al particles.

• Journal of Environmental Science International
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• v.22 no.1
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• pp.83-89
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• 2013

Silicon carbide with aluminium oxide was used to remove the sulphur hexafluoride ($SF_6$) gas using microwave irradiation. The destruction and removal efficiencies (DREs) of $SF_6$ were studies as a function of various decomposition temperatures and microwave powers. The decomposition of $SF_6$ gas was analyzed using GC-TCD. XRD (X-ray powder diffraction) and XRF (X-ray Fluorescence Spectrometer) were used to characterize the properties of aluminum oxide. DREs of $SF_6$ were increased as the microwave powers were increased. Additive aluminium oxide on SiC increased the removal efficiencies and decreased the decomposition temperature. The XRD results show that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ during $SF_6$ decomposition by microwave irradiation. It was found that the best material to control $SF_6$ was SiC with $Al_2O_3$ 30 wt% in consideration of microwave energy consumption and $SF_6$ decomposition rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.336-339
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• 2003

The present report is the investigation of the effects of the HIP treatment on plasma-sprayed ceramic coating of $Al_2O_3$, $Al_2O_3-SiO_2$ on the metal substrate. These effects were characterized by phase identification, Vickers hardness measurement, and tensile test before and after HIPing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.277-283
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• 2009

In this paper, aluminum doped zinc oxide (ZnO:Al) thin films on plastic substrate such as poly carbonate (PC), polyethylene terephthalate (PET) were prepared by RF magnetron sputtering method for flexible solar cell applications. Effects of the sputter pressure on the structural, electrical and optical properties were investigated. The crystallinity and the degree of the (002) orientation were deteriorated with increasing the sputter pressure. When the sputter pressure was higher, the conductivity of ZnO:Al films was improved because of the high carrier concentration and the Hall mobility. High quality ZnO:Al films with resistivity as low as $1.9{\times}10^{-3}{\Omega}-cm$ and the optical transmittance over 80 % in the visible region have been obtained on PC substrate at 2 mTorr.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.805-810
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• 2012

Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3258-3264
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• 2012

Aluminum oxide ($Al_2O_3$) nanofibers were treated thermally under an ammonia ($NH_3$) gas stream balanced by nitrogen to form a thin aluminum nitride (AlN) layer on the nanofibers, resulting in the enhancement of thermal conductivity of $Al_2O_3$/epoxy nanocomposites. The micro-structural and morphological properties of the $NH_3$-assisted thermally-treated $Al_2O_3$ nanofibers were characterized by X-ray diffraction (XRD) and atomic force microscopy (AEM), respectively. The surface characteristics and pore structures were observed by X-ray photoelectron spectroscopy (XPS), Zeta-potential and $N_2$/77 K isothermal adsorptions. From the results, the formation of AlN on $Al_2O_3$ nanofibers was confirmed by XRD and XPS. The thermal conductivity (TC) of the modified $Al_2O_3$ nanofibers/epoxy composites increased with increasing treated temperatures. On the other hand, the severely treated $Al_2O_3$/epoxy composites showed a decrease in TC, resulting from a decrease in the probability of heat-transfer networks between the filler and matrix in this system due to the aggregation of nanofiber fillers.

• Journal of the Korean institute of surface engineering
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• v.43 no.6
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• pp.272-277
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• 2010

We investigated the life time characteristics of OLED device with aluminium oxide ($AlO_x$) passivation film on glass substrate and polyethylene terephthalate (PET) substrate by RF magnetron sputtering for the transparent barrier film applied to flexible OLED device. Basic buffer layer was determined as $Alq_3$(500 nm)-LiF(300 nm)-Al(1200 nm), and the most suitable aluminium oxide ($AlO_x$) film have been formed when the partial volume ratio of oxygen was 20% and the sputtering power was 100 watt and the minimum thickness of buffer was $2\;{\mu}m$. $AlO_x$/epoxy hybrid film was also used as a effective passivation layer for the purpose of improving life time characteristics of OLED devices with the glass substrate and the plastic substrate. Besides, the simultaneous deposition of $AlO_x$/epoxy film on back side of PET could result in better improvement of life time.

• Journal of Powder Materials
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• v.9 no.1
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• pp.25-31
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• 2002

The efects of mechanical aloying conditions and the type of reducing agent on the solid state reductionof haematite $Fe_2O_3$ have been investigated at room temperature. Aluminium titanium zinc and copper were used as reducing agent. Nanocomposites of metal-oxide in which oxide particles with nano size were dispersed in Fe matrix were obtained by mechanical alloying of $Fe_2O_3$ with aluminium and titanium respectively However the reduction of $Fe_2O_3$ by coppe was not occurred Composite materials of iron with $Al_2O_3$ and $TiO_2$ were obtained from the system of $Fe_2O_3-Al$ and $Fe_2O_3-Ti$ after ball milling for 20 hrs and 30 hrs respectively. And the system of $Fe_2O_3-Zn$ resulted in the formationof FeO with ZnO after ball milling of 120 hrs. The final grain sizes of iron estimated by X-ray diffraction line-width measurement were in the ranges of 24~33 nm.