• Title/Summary/Keyword: Aluminium electrode

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Study on the Evaluation of TRS-398 Quality Factors with Central Electrode Corrections for Small Cylindrical Chambers (소형 전리함에 대한 TRS-398 선질인자 계산과 중심전극 보정에 관한 연구)

  • Kang, Yeong-Rok;Lee, Chang-Yeol;Kim, Jin-Ho;Moon, Young-Min;Kwak, Dong-Won;Kang, Sang-Koo;Kim, Jeung-Kee;Yang, Kwang-Mo;Jeong, Dong-Hyeok
    • Progress in Medical Physics
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    • v.22 no.3
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    • pp.148-154
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    • 2011
  • The quality factors ($k_{Q,Q_0}$) were evaluated by appling the results recently studied for the effect of central electrode in TRS-398 protocol. The PTW-31010 and IBA-CC13 chambers were used in this study. The quality factors were calculated as a function of beam quality for high energy electron and photon beams and compared with data currently used in TRS-398 protocol. In the PTW-31010 chamber using aluminium electrode, appling the new central electrode collections, the quality factors were 0.4% and 0.9% higher than current TRS-398 data for high energy photon and electron beams respectively. In the IBA-CC13 chamber using C-552 electrode, there are no variations in quality factors compared to TRS-398 data currently used.

A study for piezoelectric properties analysis of the AlN thin film by using PFM (PFM을 이용한 AlN 박막의 압전특성 분석에 관한 연구)

  • Lee, Jong-Taek;Kim, Se-Young;Shin, Hyeon-Chang;Song, Jun-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.224-225
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    • 2009
  • Aluminium nitride thin film was deposited on Au electrode and Si substrate by radio frequency sputtering system. X-ray diffraction (XRD) was utilized to identify the AlN phase, and Atomic Force Microscope (AFM) was used to obtain the images of surface morphology and roughness value of AlN thin film. The result of XRD and AFM measurement showed that the AlN thin film has strong c-axs orientation and smooth surface. In order to investigate piezoelectric response and polarization properties along to the direction of electric field, PFM (Piezoresponse Force Microscope) system was used, and the images of piezoelectric response due to switching of polarization was observed by PFM.

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Electron Emitter of Negative Electron Affinity Diamond

  • Hiraki, Akio;Ogawa, Kenji;Eimori, Nobuhiro;Hatta, Akimitsu
    • The Korean Journal of Ceramics
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    • v.2 no.4
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    • pp.193-196
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    • 1996
  • A new type of electron emitter device of chemical-vapor-deposited diamond thin film is proposed. The device is a diode of metal-insulator-insulator-semiconductor (MIS) structure consisting of an intrinsic polycrystalline diamond film as the insulator, an aluminium electrode on one side, and hydrogenated diamond surface on the other side as the p-type semconductor with negative electron affinity (NEA). Electrons will be injected and/or excited to the conduction band of intrinsic diamond layer to be emitted from the hydrogenated diamond surface of NEA.

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저전계영역에서 M$_{1}$-P-M$_{2}$형 고분자재료의 전기전도 1

  • 이덕출;임광현
    • 전기의세계
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    • v.29 no.11
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    • pp.727-732
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    • 1980
  • The main purpose of this paper is to study on the effect of contact state between metal-polymer interface in electrical conduction of polymeric materials under low field region. The electric conduction of polythylene (PE) sandwitched in between two gold (Au) electrodes was lower than that of PE Sandwitched in between two Aluminium (Al) electrodes under low external field. The discharge current of PE which have been treated by the high field application is also obtained some results under no external field. The obtained results can suggest that the material of electrode come to influence on the electrical conduction of polymeric materials and are important as a basis for analysing the data on TSC. It is also suggestive that results of observation must be considered in cases of insulation design of electrical machinery.

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The effect of the working pressure on electro-optical properties of aluminium-doped zinc oxide thin film

  • Bang, Bo-Rae;Koo, Hong-Mo;Moon, Yeon-Keon;Kim, Se-Hyun;Park, Jong-Wan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1526-1529
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    • 2005
  • Zinc oxide films have been actively investigated as transparent electrode materials for display. We report the effect of the working pressures on electro-optical properties of Al-doped ZnO thin films deposited by d.c. magnetron sputtering. The resistivity of the ZnO thin films was depended on atomic bombardment effect by working pressure.

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Study of PEO Process for Al 7075 and Effect of additives (알루미늄 7075 합금의 PEO 처리 기술 및 첨가제 영향 분석)

  • Jin, Yun-Ho;Yang, Jae-Kyo
    • Journal of the Korean institute of surface engineering
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    • v.53 no.2
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    • pp.53-58
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    • 2020
  • In this study, we developed plasma electrolytic oxidation (PEO) process for aluminum 7075 alloy to improve the corrosion and mechanical properties. The electrolyte consists of potassium hydroxide and sodium silicate. Additionally, sodium stannate was added into the electrolyte to investigate its effect on PEO film formation. Titanium was used as the counter electrode. Plasma generation voltage reduced from 300V to 150 V by adding 4 g/L of sodium stannate. The thin oxide films were observed by SEM(Scanning Electron Microscopy)/EDS (Energy Dispersive Spectroscopy) for quantitative and qualitative analyses. XRD (X-ray diffraction) and XRF (X-ray Fluorescences) analyses were also carried out to identify oxide layer on aluminum 7075 surface. Vicker's hardness test was performed on the PEO-treated aluminum 7075 surface.

Effects of an Aluminum Contact on the Carrier Mobility and Threshold Voltage of Zinc Tin Oxide Transparent Thin Film Transistors

  • Ma, Tae-Young
    • Journal of Electrical Engineering and Technology
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    • v.9 no.2
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    • pp.609-614
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    • 2014
  • We fabricated amorphous zinc tin oxide (ZTO) transparent thin-film transistors (TTFTs). The effects of Al electrode on the mobility and threshold voltage of the ZTO TTFTs were investigated. It was found that the aluminum (Al)-ZTO contact decreased the mobility and increased the threshold voltage. Traps, originating from $AlO_x$, were assumed to be the cause of degradation. An indium tin oxide film was inserted between Al and ZTO as a buffer layer, forming an ohmic contact, which was revealed to improve the performance of ZTO TTFTs.

Measurement of the displacement current using Kuhn-type LB film apparatus (Kuhn형 LB막 누적장치에서의 변위전류 측정)

  • Song, K.H.;Park, T.G.;Park, K.H.;Kwon, Y.S.;Kang, D.Y.
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.1200-1202
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    • 1993
  • There are many methods to investigate the physical properties of monolayers formed at the air-water interface. Among them, the displacement current method is appropriate for the investigation of the dynamic behavior of monolayers. The measuring system of displacement current method was constructed at home-made Kuhn type LB deposition apparatus using aluminium plate electrode. The currents induced by the dynamic motion of molecules were measured when the molecules were pressed by barrier. To verify the measuring system, we used 4-octyl -4'-(5-carboxy-pentamethyleneoxy)-azobenzene molecules which has two remarkable variations of surface pressure of monolayer at the air-water interface. We can detect the two peaks of displacement currents which shows that the orientations of molecules are changed greatly at the state of these two remarkable changes of surface pressure.

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The Study of Manufacturing the AAO Template and Fabrication of Carbon and Metal Oxide Nanofibers using AAO Template (AAO (Anodized Aluminium Oxide) template 제조 및 이를 이용해 제조한 탄소 및 산화 금속 나노 섬유 물질에 관한 연구)

  • Kim, Cheong;Park, Soo-Gil
    • Journal of the Korean institute of surface engineering
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    • v.49 no.4
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    • pp.357-362
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    • 2016
  • In this study, we manufactured the anodized alumina oxide (AAO) template and fabricated the carbon nanofibers and manganese oxide nanofibers using AAO template for application to electrochemical capacitor. Pore diameters of the AAO template were increased from 50 to 90 nm by increasing the acid treatment time after two-step anodizing process. Furthermore nanofibers, which is fabricated by AAO template, showed uniform diameter and micro structure. It is suggested that the surface area is larger than commercial electrode material and it is enhancing the energy density by increasing the specific capacitance.

Improvement of Optical and Electrical Properties of AZO Thin Films by Controlling Fluorine Concentration (F 농도 조절을 통한 AZO 박막의 광학적 전기적 특성 향상)

  • Jang, Suyoung;Jang, Jun Sung;Jo, Eunae;Karade, Vijay Chandraknt;Kim, Jihun;Moon, Jong-Ha;Kim, Jin Hyeok
    • Korean Journal of Materials Research
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    • v.31 no.3
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    • pp.150-155
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    • 2021
  • Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 ℃. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10-4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.