• 한국재료학회지
• /
• 제8권2호
• /
• pp.131-134
• /
• 1998

$SiO_{2}$ 기판과 dimethylethylamine alane(DMEAA)을 반응소스로 하여 알루미늄을 증착시켜 증착전 전처리 가스 종류와 수소 플라즈마 처리에 따른 증착속도의 차이와 미세구조에 대하여 연구하였다. TiN기판에 증착된 알루미늄의 증착속도는 증착전 수소 가스에 의한 전처리한 경우 아르곤이나 헬륨에 의한 전처리에 비해 빠른 증착속도를 나타내었다. 이르곤 플라즈마 전처리나 플라즈마 전처리 하지 않고 $SiO_{2}$기판에 알루미늄을 증착하였을 경우에 비해 수소 플라즈마 전처리에 의해 알루미튬증착시 잠복기(incubation time)가 감소하였으며 치밀한 미세조직을 얻을 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
• /
• pp.962-965
• /
• 2004

In this work, thin films of amorphous silicon (a-Si) were formed on plastic substrates by sputtering deposition and crystallized using excimer laser irradiation. As the entire process is conducted at room temperature, and the laser irradiation-induced heating is confined to the thin film, the plastic substrate is not subjected to thermal stresses. The microstructure resulting from the laser irradiation was dependent on the laser irradiation energy density and the composition of the underlying buffer layers. It was found that a layer of AlN deposited as a buffer between the plastic and the a-Si film increased the endurance of the a-Si film under laser irradiation, and resulted in polycrystalline Si grains up to 100nm in diameter.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 센서 박막재료
• /
• pp.11-14
• /
• 2001

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 30[mN/m]. LB layers of Arac. acid deposited by LB method were deposited onto slide glass as Y-type film. The physicochemical properties of the LB films were examined by UV absorption spectrum, SEM and AFM. The structure of manufactured device is Au/arachidic acid/Al. the number of accumulated layers are 3~9. Also. we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from -3 to +3[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• 한국재료학회지
• /
• 제20권12호
• /
• pp.676-680
• /
• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.290.2-290.2
• /
• 2016

Recently, organic thin-film transistors have been widely researched for organic light-emitting diode panels, memory devices, logic circuits for flexible display because of its virtue of mechanical flexibility, low fabrication cost, low process temperature, and large area production. In order to achieve high performance OTFTs, increase in accumulation carrier mobility is a critical factor. Post-fabrication thermal annealing process has been known as one of the methods to achieve this by improving the crystal quality of organic semiconductor materials In this paper, we researched the properties of pentacene films with X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM) analyses as different annealing temperature in N2 ambient. Electrical characterization of the pentacene based thin film transistor was also conducted by transfer length method (TLM) with different annealing temperature in Al- and Ti-pentacene junctions to confirm the Fermi level pinning phenomenon. For Al- and Ti-pentacene junctions, is was found that as the surface quality of the pentacene films changed as annealing temperature increased, the hole-barrier height (h-BH) that were controlled by Fermi level pinning were effectively reduced.

• 대한전자공학회논문지SD
• /
• 제40권1호
• /
• pp.11-19
• /
• 2003

폭발성 가스의 증류 및 그 양을 검지하기 위한 4 개의 개별 센서가 한 마이크로 열판 위에 집적된 센서어레이를 개발했다. 이 센서어레이는 각종 가스에 대해 다양한 감도 패턴을 가지며, SnO2를 모물질로 하는 4 개의 산화물 반도체 마이크로 가스센서로 구성하였다. 다공질에 큰 비표면적을 가진 모물질에 서로 다른 촉매를 첨가하여 감지물질을 제작함으로써 저농도에 대한 감도 및 재현성을 높였고, 센서어레이 전반에서 균일한 온도 분포가 되도록 설계하였다. 마이크로 열판은 N/O/N 박막을 가진 실리콘 기관을 이용하여, 열적 고립을 위해 Al 본딩 와이어로 공기중에 부유되어 있고, CMP 공정으로 두께를 제어하여 소모 전력을 조절하였다. 400℃에서 동작하는 센서어레이로부터 얻은 감도를 이용하여 주성분 분석 기법을 통해 폭발 하한값의 범위에서 부탄, 프로판, LPG, 그리고 일산화탄소 등과 같은 폭발성 빛 유독성 가스의 증류 및 양을 신뢰성 있게 식별할 수 있었다.

• E2M - 전기 전자와 첨단 소재
• /
• 제1권4호
• /
• pp.303-310
• /
• 1988

본 논문에서는 Langmuir-Blodgett법으로 유기초박막을 제작하기 위하여 시료인 (N-docosyl pyridinium)-TCNQ(1:2) 작제를 합성하고 이를 초박막으로 제작한 다음, U.V측정, capacitance측정, 그리고 기판과 수직한 방향의 도전율등을 측정하여 막이 잘 이루어지고 있음을 확인하였다. 한편, 하부 전극을 Al로 할 경우 전극표면에 생기는 자연 산화막(Al$_{2}$O$_{3}$)의 두께는 37.1.angs.정도이었으며 기관과 수직한 방향의 도전율은 약 $10^{-14}$S/cm로 양호한 절연성이었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.723-726
• /
• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-$\gamma$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• 한국초전도ㆍ저온공학회논문지
• /
• 제15권2호
• /
• pp.12-15
• /
• 2013

The pure and carbon (C)-doped $MgB_2$ thin films were fabricated on $Al_2O_3$ (0001) substrates at a temperature of $650^{\circ}C$ by using hot-filament-assisted hybrid physical-chemical vapor deposition technique. The $T_c$ value for pure $MgB_2$ film is 38.5 K, while it is between 30 and 35 K for carbon-doped $MgB_2$ films. Expansion in c-axis lattice parameter was observed with increase in carbon doping concentration which is in contrast to carbon-doped $MgB_2$ single crystals. Significant enhancement in the critical current density was obtained for C-doped $MgB_2$ films as compared to the undoped $MgB_2$ film. This enhancement is most probably due to the incorporation of C into $MgB_2$ and the high density of grain boundaries, both help in the pinning of vortices and result in improved superconducting performance.

• International Journal of Ocean System Engineering
• /
• 제2권2호
• /
• pp.106-115
• /
• 2012

In the present study, TiN and CrN films were coated by arc ion plating equipment onto aluminum alloy substrate, A2024. The film thickness was about 4.65 ${\mu}m$. TiN and CrN films were analyzed by X-ray diffraction and energy dispersive X-ray equipments. The Young's modulus and the micro-Vickers hardness of aluminum substrate were modified by the ceramic film coatings. The difference in Young's modulus between substrate and coating film would affect on the wear resistance. The critical load, Lc, was 75.8 N for TiN and 85.5 N for CrN. It indicated from the observation of optical micrographs for TiN and CrN films that lots of cracks widely propagated toward the both sides of scratch track in the early stage of MODE I. TiN film began to delaminate completely at MODE II stage. The substrate was finally glittered at MODE III stage. For CrN film, a few crack can be observed at MODE I stage. The delamination of film was not still occurred at MODE II and then was happened at MODE III. This agrees with critical load measurement which the adhesive strength was greater for CrN film than for TiN film. Consequently, it was difficult for CrN to delaminate because the adhesive strength was excellent against Al substrate. The wear process, which the film adheres and the ball transfers, could be enhanced because of the increase in loading. The wear weight of ball was less for CrN than for TiN. This means that the wear damage of ball was greater for TiN than for CrN film. It is also obvious that it was difficult to delaminate because the CrN coating film has high toughness. The coefficient of friction was less for CrN coating film than for TiN film.