• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 추계학술대회 논문집
• /
• pp.33-36
• /
• 1996

AIN thin films were prepared using by Rf sputtering method on the GaAs(170) substrate and investigated by X-ray diffractometer, IR spectroscopy, n&k system. The parameters were the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio. The AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. The crystallinity of the films, which were grown respectively under the different conditions, were determined by the comparison of the band width of an E$_1$[TO:680$cm^{-1}$ /] phonon mode. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.% according to the increment of the $N_2$/Ar ratio by which the sputter yield got lower.

• 한국재료학회지
• /
• 제10권1호
• /
• pp.90-96
• /
• 2000

Underlayer의 종류 및 두께가 Al 박막의 배향성 및 면저항 변화에 미치는 영향을 연구하였다. Al의 underlayer로서 sputtering 방식으로 증착되는 Ti와 TiN이 적층된 구조인 Ti/TiN이 사용되었으며, 각각에 대해 두께를 변화시키면서 Al 박막의 배향성, 면저항을 조사하였고, $400^{\circ}C,\;N_2$ 분위기에서 열처리하면서 면저항의 변화를 조사하였다. Ti만을 Al의 underlayer로 사용한 경우, Ti두께가 10nm 이상이면 우수한 Al <111> 배향성을 나타냈으며 Al-Ti 반응 때문에 열처리 후 Al 배선의 면저항이 크게 상승하였다. Ti와 Al사이에 TiN을 적용함에 의해 Al <111> 배향성은 나빠지나 Al-Ti 반응에 의한 면저항의 증가는 억제할 수 있었다. Ti/TiN underlayer의 경우, 우수한 Al <111> 배향성을 확보하기 위한 Ti의 최소두께는 20nm이었고, Al-Ti 반응을 억제하기 위한 TiN의 최소두께는 20nm이었다.

• 한국재료학회지
• /
• 제12권9호
• /
• pp.718-723
• /
• 2002

$Ti_{1-x}$ $Al_{ x}$N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of $Ti_{1-x}$ /$Al_{x}$ N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of $Ti_{0.74}$ /X$0.74_{0.26}$N film is 2.1eV and $10^{-16}$ ~$10^{-15}$ $\textrm{cm}^2$/s, respectively. $_Ti{1-x}$ /$Al_{x}$ XN barrier layer showed good oxidation resistance.

• 한국전기전자재료학회논문지
• /
• 제21권5호
• /
• pp.458-462
• /
• 2008

In this paper, we investigated the (002) preferred orientation and morphology characteristics of AlN thin film by using reactive rf sputtering. Additionally, AlN thin films grown in the range from 150 to 300 W were studied under room temperature without substrate heating and post annealing. Sputtered AlN thin films were well grown on Si substrates and the (002) main peak in XRD patterns showed the highest intensity at 300 W with $0.25^{\circ}$ degree of full width at half-maximum (FWHM). As increased RF power, the surface roughness was increased from 1.0 to 3.4 nm. In Fourier transformation infrared spectroscopy (FTIR), $A_1$ (TO) and $E_1$ (TO) mode closed to AlN thin film confirmed the changes with increasing the intensity rate. From these results, we could confirm a chance of the growth of AlN thin film by only low temperature.

• Transactions on Electrical and Electronic Materials
• /
• 제10권3호
• /
• pp.89-92
• /
• 2009

High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.

• 한국표면공학회지
• /
• 제24권4호
• /
• pp.196-205
• /
• 1991

Multi-level thin films are very important in ULSI applications because of their high electromigration resistance. This study presents the effects of titanium, titanium nitride and titanium tungsten underlayers of the stability of multi-aluminum thin films during isothermal annealing. High purity Al(99.999%) films have been electron-beam evaporated on Ti, TiN, TiW films formed on SiO2/Si (P-type(100))-wafer substrates by RF-sputtering in Ar gas ambient. The hillock growth was increased with annealing temperatures. Growth of hillocks was observed during isothermal annealing of the thin films by scanning electron microscopy. The hillock growth was believed to appear due to the recrystallization process driven by stress relaxation during isothermal annealing. Thermomigration damage was also presented in thin films by grain boundary grooving processes. It is shown that underlayers of Al/TiN/SiO2, Al/TiW/SiO2 thin films are preferrable to Al/SiO2 thin film metallization.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2007년도 추계학술대회 논문집
• /
• pp.7-9
• /
• 2007

Thin films of CrAlSiN were deposited on SKD11 tool steel substrate using Cr and AlSi cathodes by a cathodic arc plasma deposition system. The influence of process parameters on the deposited film properties were investigated. The oxidation characteristics of the films were studied at temperatures ranging from 800 and 1000+C up to 50 h in air. The films showed superhardness and good oxidation resistance..

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
• /
• pp.167-170
• /
• 2011

Quaternary TiZrAlN nanocomposite thin films with a composition of 20.7Ti-22.2Zr-2.7Al-54.4N (at.%) were deposited by the closed-field unbalanced magnetron sputtering (CFUBMS) method and oxidized in air at temperatures between 500 and $700^{\circ}C$. The oxides formed were $TiO_2$, $ZrO_2$, and $Al_2O_3$. The films had inferior oxidation resistance because the amounts of $ZrO_2$ and $TiO_2$ were large while the amount of $Al_2O_3$ was small. The oxidation progressed primarily by the inward diffusion of oxygen and the outward diffusion of nitrogen.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.419-420
• /
• 2008

In this study, high quality (Al,N)-codoped p-type ZnO thin films were obtained by DC magnetron sputtering. The film on buffer layer grown in 80% $N_2$ ambient shows highest hole concentration of $2.93\times10^{17}cm^{-3}$. The films show hole concentration in the range of $1.5\times10^{15}$ to $2.93\times10^{17}cm^{-3}$, resistivity of 131.2 to 2.864 $\Omega$cm, mobility of 3.99 to 31.6 $cm^2V^{-1}s^{-1}$. The films on Si show easier p-doping in ZnO than those on buffer layer. The film on Si shows the highest quality of optical photoluminescence (PL) characteristics. The donor energy level $(E_d)$ of (Al,N)-codoped ZnO films is about 50 meV and acceptor energy level $(E_a)$ is in the range of 63 to 71 meV. It will help to improve p-type ZnO films.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.509-512
• /
• 2001

Aluminum nitride(AlN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AlN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, $200^{\circ}C$ of substrate temperature and 15 mTorr of working pressure. The leakage current density was less then $1.3{\times}10^{-7}A/cm^{2}$. And it was also investigated the etching properties of deposited AlN thin films for application.