• Journal of Sensor Science and Technology
• /
• v.16 no.6
• /
• pp.457-461
• /
• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on $SiO_{2}$ and AlN substrates, respectively. The crystallinity and the bonding structure of poly 3C-SiC grown on each substrate were investigated according to various growth temperatures. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD and FT-IR by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_{2}$ and AlN were not different. However, their electron mobilities were $7.65{\;}cm^{2}/V.s$ and $14.8{\;}cm^{2}/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_{2}$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• 전자공학회논문지 IE
• /
• v.43 no.2
• /
• pp.7-10
• /
• 2006

A GaN-based metal-insulator-semiconductor (MIS) structure has been fabricated by using $BaTa_2O_6$ instead of conventional oxide as insulator gate. The leakage current o) films are in order of $10^{-12}-10^{-13}A/cm^2$ for GaN on $Al_2O_3$(0001) substrate and in order of $10^{-6}-10^{-7}A/cm^2$ for GaN on GaAs(001) substrate. The leakage current of thses films is governed by space-charge-limited current over 45 MV/cm in case of GaN on $Al_2O_3$(0001) substrate and by Poole-Frenkel emission in case of GaN on GaAs(001).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.9
• /
• pp.589-593
• /
• 2014

AlNO multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. $Al_2O_3$/AlNO(LMVF)/AlNO(HMVF)/Al/substrate of 4 multi-layer has been prepared in an Ar and ($N_2+O_2$) gas mixture, and $Al_2O_3$ of top layer is anti-reflection layer on double AlNO(LMVF)/AlNO(HMVF) layers and Al metal of infrared reflection layer. In this study, the roughness and surface properties of AlNO thin films were estimated by field emission scanning electron microscopy(FE-SEM). The grain size of AlNO thin films increased with increasing sputtering power. The composition of thin films has been systematically investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The absorptance of AlNO films shows the increasing trend with swelling ($N_2+O_2$) gas mixture in HMVF and LMVF deposition. The excellent optical performance showed above 98% of absorptance in visible wavelength region.

• Journal of the Korean institute of surface engineering
• /
• v.56 no.5
• /
• pp.335-340
• /
• 2023

Quinary component of 3㎛ thick Ti-Al-Si-Cu-N films were deposited onto WC-Co and Si wafer substrates by using an arc ion plating(AIP) system. In this study, the influence of copper(Cu) contents on the mechanical properties and microstructure of the films were investigated. The hardness of the films with 3.1 at.% Cu addition exhibited the hardness value of above 42 GPa due to the microstructural change as well as the solid-solution hardening. The instrumental analyses revealed that the deposited film with Cu content of 3.1 at.% was a nano-composites with nano-sized crystallites (5-7 nm in dia.) and a thin layer of amorphous Si₃N₄ phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1994.05a
• /
• pp.71-73
• /
• 1994

In this paper we have investigated discharge conditions(parameters of this experiment) in facing targets sputtering system and fabricated $Al_{N}$ thin films. The parameters of this study are diameter of wing(d) and distance(L) between two facing targets. Varing discharge conditions, the discharge characteristics are wide different. The optimal conditions in this experiments are d = 6.5 [cm], L = 6.5[cm]

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.28 no.4
• /
• pp.170-174
• /
• 2018

AlN crystal is been developing in global site for many years and 1 inch diameter wafer was already developed but it is demanding the efforts for the better quality. On the other hand, also the 2-inch size is developing recently to reduce the unit cost for manufacturing and to use to fabrication of the UV LED chips. In this study, we tried to evaluate the possibility of bulk AlN crystals on his thin films by PVT method. The AlN thin film was grown on SiC single crystal 2" wafer by HVPE method. We successfully grew AlN bulk crystal of a thickness of 7 mm using its thin film of a thickness of $10{\mu}m$ as a seed crystal. The resultants of AlN crystals were identified by metallurgical microscope, optical stereographic microscope and DCXRD measurement.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 2003.10a
• /
• pp.89-94
• /
• 2003

Hard coatings are known to improve the performance of cutting tools in aggressive machining applications, such as high speed machining. New superhard Ti-Al-Si-W films, characterized by a nanocomposite nano-sized (Ti,Al,Si)N crystallites embedded in amorphous $Si_3 N_4$ matrix, could be successfully synthesized on WC-Co substrates by a hybrid coating system of arc ion plating(AIP) and sputtering method. The hardness of Ti-Al-Si-N film increased with incorporation of Si, and had the maximum value ~50 GPa at the Si content of 9 at.%, respectively. And the X-ray diffraction patterns of Ti-Al-Si-N films with various Si content is investigated. In this study, Ti-Al-Si-N coatings were applied to end-mill tools made of WC-Co material by a hybrid coating system. Cutting tests fir the high-hardened material (STD11,$H_R$)C62 and their performances in high speed cutting conditions were studied. Also, the tool wear and tool lift of Ti-Al-Si-N with various si(6, 9, 19) contents were measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1994.11a
• /
• pp.106-108
• /
• 1994

Electromigration(EM) tests were carried out on Al and Cu films in HV systems to study surface migration. The Al films were made on oxidized silicon wafers by thermal evaporation, in-situ annealed at 300$^{\circ}C$, patterned, and EM tested at 260$^{\circ}C$ and 4.5MA/$\textrm{cm}^2$. SEM observation with back scattered electron mode on the EM tested Al films disclosed that thinning took place under the native Al oxide. In the case of Cu films, tested using in-situ TEM, thinning was also observed at the early stage of void formation even though the thinned areas were much less than those of the Al films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05b
• /
• pp.82-85
• /
• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.6
• /
• pp.575-579
• /
• 2008

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ of by RF magnetron sputtering. Target was ZnO ceramic mixed with 2 wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-3}$, mobilities from 0.194 to $2.3\;cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4\;{\Omega}cm$. p-type sample has density of $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. XPS spectra show that Ols has O-O and Zn-O structures and Al2p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.