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http://dx.doi.org/10.6111/JKCGCT.2018.28.4.170

A study on the AlN crystal growth using its thin films grown on SiC substrate  

Yin, Gyong-Phil (Ceracomb Co., Ltd.)
Kang, Seung-Min (International Design Convergence Graduate School, Hanseo University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.28, no.4, 2018 , pp. 170-174 More about this Journal
Abstract
AlN crystal is been developing in global site for many years and 1 inch diameter wafer was already developed but it is demanding the efforts for the better quality. On the other hand, also the 2-inch size is developing recently to reduce the unit cost for manufacturing and to use to fabrication of the UV LED chips. In this study, we tried to evaluate the possibility of bulk AlN crystals on his thin films by PVT method. The AlN thin film was grown on SiC single crystal 2" wafer by HVPE method. We successfully grew AlN bulk crystal of a thickness of 7 mm using its thin film of a thickness of $10{\mu}m$ as a seed crystal. The resultants of AlN crystals were identified by metallurgical microscope, optical stereographic microscope and DCXRD measurement.
Keywords
AlN; AlN crystal; Crystal growth; PVT method; 2 inch crystal;
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