• Korean Journal of Materials Research
• /
• v.9 no.12
• /
• pp.1216-1221
• /
• 1999

GaN films were deposited on sapphire [$Al_2O_3(0001)$] substrates at relatively low temperature by MOCVD using N-atom source based on a Dielectric Barrier Discharged method. Ammonia gas($NH_3$is commonly used as an N-source to grow GaN films in conventional MOCVD process, and heating to high temperature is required to provide sufficient dissociation of $NH_3$. We used a dielectric barrier discharge method instead of $NH_3$ to grow GaN film relatively low temperature. DBD is a type of discharge, which have at least one dielectric material as a barrier between electrode. DBD is a type of controlled microarc that can be operated at relatively high gas pressure. Crystallinity and surface morphology depend on growth temperature and buffer layer growth. With the DBD-MOCVD method, wurtzite GaN which is dominated by the (0001) reflection was successfully grown on sapphire substrate even at $700^{\circ}C$.

• Journal of the Korean institute of surface engineering
• /
• v.37 no.5
• /
• pp.249-252
• /
• 2004

Effects of HA and TiN coating on the electrochemical characteristics of Ti-6AI-4V alloys for bone plates were investigated using various test methods. Ti-6AI-4V alloys were fabricated by using a vacuum induction furnace and bone plates were made by laser cutting and polishing. HA was made of extracted tooth sintered and then tooth ash was used as HA coating target. The TiN and HA film coating on the surface were carried on using electron-beam physical vapor deposition (EB-PVD) method. The corrosion behaviors of the samples were examined through potentiodynamic method in 0.9% NaCI solutions at $36.5\pm$$1^{\circ}C$ and corrosion surface was observed using SEM and XPS. The surface roughness of TiN coated bone plates was lower than that of tooth ash coated plates. The structure of TiN coated layer showed the columnar structure and tooth ash coated layer showed equiaxed and anisotrophic structure. The corrosion potential of the TiN coated specimen is comparatively high. The active current density of TiN and tooth ash coated alloy showed the range of about $1.0xl0^{-5}$ $A\textrm{cm}^2$, whereas that of the non-coated alloy was$ 1.0xl0^{-4}$ $A\textrm{cm}^2$. The active current densities of HA and TiN coated bone plates were smaller than that of non-coated bone plates in 0.9% NaCl solution. The pitting potential of TiN and HA coated alloy is more drastically increased than that of the non-coated alloy. The pit number and pit size of TiN and HA coated alloy decreased in compared with those of non-coated alloy. For the coated samples, corrosion resistance increased in the order of TiN coated, tooth ash coated, and non-coated alloy.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.341-341
• /
• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.13 no.5
• /
• pp.76-81
• /
• 2014

The Engineering ceramics have some excellent properties as materials for modern mechanical and electrical components. It is, however, not easy to polish them efficiently because they are strong and hard. This study is carried out to obtain a mirror surface on engineering ceramics by surperfinishing with high efficiency. To achieve this, we conducted a series of polishing experiments using representative engineering ceramics, such as $Al_2O_3$, SiC, $Si_3N_4$ and $ZrO_2$, using diamond abrasive film from the perspective of oscillations peed, the rotational speed of the workpiece, contact roller hardness, contact pressure and feed rate. Furthermore, the polishing efficiency and characteristics for engineering ceramics are discussed on the basis of optimal polishing time and surface roughness. Our results confirmed that efficient superfinishing conditions and polishing characteristics of engineering ceramics can be determined.

• Korean Journal of Materials Research
• /
• v.11 no.7
• /
• pp.622-624
• /
• 2001

The CVD film of methoxysilane derived from diphenyldimethoxysilane(DPDMS) was formed on the outer surface of a porous ${\alpha}-alumina$ support tube coated(via dipping-drying-calcining) with a boehmite sol(0.3 mol-Al/L). The resulting silica membrane($500^{\circ}C,\;P_{fe}\;=\;130\;Pa$) showed a permeance of $5.18{\times}10^{-8}\;mol\;{\cdot}\;m^{-2}{\cdot}s^{-1}{\cdot}Pa^{-1}\;for\;CO_2$ and a permselectivity of 13.35 for $CO_2/N_2\;at\;30^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.23-23
• /
• 2009

CIGS 박막 태양전지는 제조단가가 낮고 박막 태양전지 중에서 변환효율이 가장 높아 발전 가능성이 큰 태양전지로 인식되고 있다. 이미 일본, 독일, 미국을 비롯한 선진국에서는 30-50 MW 급의 양산 라인이 구축되고 있어 2010년 이후에는 본격적인 상용화가 진행될 것으로 보인다. CIGS 광흡수층은 진공증발, 셀렌화, 나노입자, 전기도금등 다양한 방식으로 제조가 가능한데 이 중에서도 동시진공증발공정은 고효율 CIGS 박막 태양전지 제조에 적합하다. 본 연구에서는 동시진공증발법을 이용하여 CIGS 박막을 증착하였으며 소다회유리/Mo/CIGS/CdS/i-ZnO/n-ZnO/Al/AR 구조의 태양전지를 제조하였다. 기판온도 모니터링을 통한 Cu 이차상 조절 기술을 이용하여 결정립이 매우 큰 CIGS 박막을 증착하였으며 Ga/(In+Ga) 조성비의 조절을 통하여 밴드갭 에너지를 최적화하였다. 또한 QCM 장치를 활용하여 용액 속에서 성장되는 CdS 박막의 두께와 특성을 조절하였다. 이러한 공정최적화를 통하여 개방전압 0.65 V, 단락전류밀도 38.8 $mA/cm^2$, 충실도 0.74 그리고 변환효율 18.8% 의 CIGS 박막 태양전지를 얻었다.

• 한국초전도학회:학술대회논문집
• /
• v.9
• /
• pp.147-151
• /
• 1999

YBCO step-edge Josephson junction were fabricated on sapphire substrates. The steps were formed on R-plane sapphire substrates by using Ar ion milling with PR masks. The step angle was controlled in the wide range from 25$^{\circ}$ to 50$^{\circ}$ by adjusting both the Ar ion incident angle and the photoresist mask rotation angle relative to the incident Ar ion beam. CeO$_2$ buffer layer and in-situ YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films was deposited on the stepped R-plane sapphire substrates by pulsed laser deposition method. The YBCO film thickness was varied to obtain the ratio of film thickness to step height in the range from 0.5 to 1. The step edge junction exhibited RSJ-like behaviors with I$_cR_n$ product of 100 ${\sim}$ 300 ${\mu}$V, critical current density of 10$^3$ ${\sim}$ 10$^5$ A/ cm$^2$ at 77 K.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.6
• /
• pp.429-435
• /
• 1999

The $SrTiO_3$ thin films were prepared on Ag/TiN-coated and p-type bare Si(100) substrates by r.f. magnetron sputtering deposition technique. The electrical properties of the deposited films were investigated, which controlling deposition parameters such as substrate temperature and film thickness. The electrical properties ofthe $SrTiO_3$ films were measured using the capacitance-voltage(C-V) technique. The thickness dependence of the electrical properties of the $SrTiO_3$ films was analyzed of the connection with the films in series. The substrate affected the crystal structure and texture characteristics of the $SrTiO_3$ films. The resistivity of the film, sandwiched between Al and Ag films was measured, as a function of the temperature.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.128-128
• /
• 2011

Polysilicon thin-film transistors (poly-Si TFTs)는 능동행렬 액정 표시 소자(AMLCD : Active Matrix Liquid Crystal Display)와 DRAM과 같은 메모리 분야에 폭넓게 적용이 가능하기 때문에 많은 연구가 진행되고 있다. 최근 poly-Si TFTs의 우수한 특성으로 인하여 주변 driving circuits에 직접화가 가능하게 되었다. 또한 디스플레이 LCD 패널에 controller와 메모리와 같은 다 기능의 장치을 직접화 하여 비용의 절감과 소자의 소형화가 가능한 SOP (System on panels)에 연구 또한 진행 되고 있다. 이미 잘 알려진 바와 같이 비휘발성 메모리는 낮은 소비전력과 비휘발성이라는 특성 때문에 이동식 디바이스에 데이터 저장 장치로 많이 사용되고 있다. 하지만 플로팅 타입의 비휘발성 메모리는 제작공정의 문제로 인하여 SOP의 적용에 어려움을 가지고 있다. SONOS 타입의 메모리는 빠른 쓰기/지우기 효율과 긴 데이터 유지 특성을 가지고 있으나 소자의 스케일링 따른 누설전류의 증가와 10년의 데이터 보존 특성을 만족 시킬 수 가 없는 문제가 발생한다. 본 연구에서는 SOP 적용을 위하여 ELA 방법을 통하여 결정화한 poly-Si TFT memory를 SiO2/Si3N4/SiO2 Tunnel barrier와 High-k HfO2과 Al2O3을 Trapping layer와 Blocking layer로 적용, 비휘발성 메모리을 제작하여 전기적 특성을 알아보았다.

• Journal of Sensor Science and Technology
• /
• v.16 no.6
• /
• pp.407-412
• /
• 2007

For $VO_{2}$ sensors applicable to temperature measurement by using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were investigated systematically as a function of the annealing condition. The starting materials, vanadium pentoxide ($V_{2}O_{5}$) powders, were mixed with vehicle to form paste. This paste was screen-printed on $Al_{2}O_{3}$ substrates and then $VO_{2}$ thick films were heat-treated at $450^{\circ}C$ to $600^{\circ}C$, respectively, for 1 hr in $N_{2}$ gas atmosphere for the reduction. As results of the temperature vs. resistance property measurements, the electrical resistance of the $V_{2}O_{5}$ sensor in phase transition range was decreased by $10^{3.9}$ order. The presented critical temperature sensor could be used in fire-protection and control systems.